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  • American Institute of Physics (AIP)  (241,959)
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  • 11
    Electronic Resource
    Electronic Resource
    (001) GaAs substrate preparation for direct ZnSe heteroepitaxy (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7012-7017 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the influence of the (001) GaAs substrate preparation on the first stages of ZnSe heteroepitaxial growth by molecular beam epitaxy. We show that three different GaAs reconstructions occur depending on the ex situ substrate preparation, the Se residual pressure in the growth chamber and the temperature of heating. After deoxidation, an epiready substrate leads to a (2×1)-reconstructed surface at high temperature (∼600 °C) which turns into an unreconstructed surface when cooling down to the growth temperature (280 °C). An etched substrate, on the other hand, exhibits a (2×3) or a (4×3) reconstruction depending on the temperature reached during deoxidation. Both reconstructions are stable upon cooling down to the growth temperature. Direct nucleation of ZnSe on such deoxidized substrates leads to three-dimensional (3D), quasi two-dimensional (2D) and purely 2D growth modes on the unreconstructed, (2×3) and (4×3) reconstructed surfaces, respectively. Very pronounced oscillations of the reflection high-energy electron diffraction intensity are observed during nucleation on the (4×3) surface. Excellent agreement is obtained between simulated and experimental x-ray rocking curves for pseudomorphic layers grown on a (4×3) starting surface. In addition, their low-temperature photoluminescence spectra are dominated by free exciton recombinations without any defect-related line. Our results thus demonstrate that we have achieved a substantial improvement of ZnSe heteroepitaxy on bare GaAs substrates. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365266
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  • 12
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    (001) oriented L1 FePt/BC multilayer thin films on naturally oxidized Si substrate (2013)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2013-03-22
    Description: J. Zhang, H. Ding, S. Q. Li, Q. T. Li, H. B. Wang et al. (001) oriented FePt/BC multilayer thin films with high perpendicular coercivity (〉=9.7 kOe) were prepared on naturally oxidized Si substrates by magnetron sputtering and thereafter annealing. Effect of FePt layer thickness on the texture parameter of the (001) orientation, chemical ordering, and mag ... [J. Appl. Phys. 113, 17C108 (2013)] published Thu Mar 21, 2013.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 13
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    (001) textured L1-FePt pseudo spin valve with TiN spacer (2011)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2011-12-22
    Description: P. Ho, G. C. Han, K. H. He, G. M. Chow, and J. S. Chen TiN was investigated as a potential spacer material in L1-FePt based pseudo spin valves (PSV). PSVs with the structure MgO/L1-FePt (20 nm)/TiN (5 nm)/L1-FePt (x nm) were fabricated, where x was varied from 5 to 20 nm. The highest giant magnetoresistance (GMR) ratio of 0.61% was obtained for the PSV ... [Appl. Phys. Lett. 99, 252503 (2011)] published Wed Dec 21, 2011.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 14
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    [001]-oriented nonepitaxial growth in L1-ordered FePt thin film by SiO addition and rapid thermal annealing (2011)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2011-02-16
    Description: T. Narisawa, T. Hasegawa, S. Ishio, and H. Yamane A highly L1-ordered FePt film with a crystalline [001] orientation was prepared by SiO addition and rapid thermal postannealing on an oxidized Si substrate. In order to clarify the mechanism of L1 ordering and the crystalline orientation of a nonepitaxial FePt film, we investigated the effect of the ... [J. Appl. Phys. 109, 033918 (2011)] published Tue Feb 15, 2011.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 15
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    [010] uniaxial-anisotropy induced asymmetry of magnetic reversal in (Ga,Mn)As (2013)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2013-01-24
    Description: D. C. Lin, G. Y. Bi, F. Li, C. Song, Y. Y. Wang et al. We investigate the asymmetric magnetic rotation arising from [010] uniaxial anisotropy in (Ga,Mn)As thin films by measuring the planar Hall effect, with the Hall bars fabricated along [110] direction. Two modes, angle-scan and field-scan, are utilized to do the measurements, both of which show remar ... [J. Appl. Phys. 113, 043906 (2013)] published Wed Jan 23, 2013.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 16
    Electronic Resource
    Electronic Resource
    0°–360° bistable nematic liquid crystal display with large dΔn and high contrast (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1722-1725 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new mode of 0°–360° bistable twisted nematic (BTN) liquid crystal display is developed by using a parameter space method. This new mode possesses a large dΔn value that provides a possibility of using a 4.8–7 μm cell gap and a 6.5 V operating voltage for the new 0°–360° BTN cells. The high-contrast ratios above 80 within −80°–80° viewing-angle ranges are obtained experimentally in a horizontal direction, and the highest contrast ratio achieved is up to 250. In the contrast ratio, the experiment's results concur with the simulation results. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1303053
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  • 17
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    [1 + 1] photodissociation of CS(X-tildePi) via the vibrationally mediated B-tildeSigma state: Multichannels exhibiting and mode specific dynamics (2011)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2011-03-18
    Description: Jialin Li, Cuimei Zhang, Qun Zhang, Yang Chen, Cunshun Huang et al. Dissociation dynamics of CS vibrationally mediated via its B-tildeSigma state, was studied using the time-sliced velocity map imaging technique. The parent CS cation was prepared in its X-tildePi ground state through a [3 + 1] resonance enhanced multiphoton ionization process, via the 4psigmaPi inte ... [J. Chem. Phys. 134, 114309 (2011)] published Thu Mar 17, 2011.
    Print ISSN: 0021-9606
    Electronic ISSN: 1089-7690
    Topics: Chemistry and Pharmacology , Physics
    Published by American Institute of Physics (AIP)
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  • 18
    Electronic Resource
    Electronic Resource
    1 000 000 °C/s thin film electrical heater: In situ resistivity measurements of Al and Ti/Si thin films during ultra rapid thermal annealing (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 417-419 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We introduce a new technique for rapidly heating (106 °C/s) thin films using an electrical thermal annealing (ETA) pulse technique. By applying a high-current dc electrical pulse to a conductive substrate-heater material (Si), joule heating occurs thus heating the thin film. This method was demonstrated by heating thin films of aluminum at rates ranging from 103 to 106 °C/s. The temperature of the system is measured by using the substrate heater as a thermistor and is found to be within ≈±10 °C during anneals at ≈105 °C/s. Phase transformations in the Ti-Si system were also observed using in situ resistivity measurements during ETA at ≈104 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111116
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  • 19
    Electronic Resource
    Electronic Resource
    1 Gb/s Si high quantum efficiency monolithically integrable λ=0.88 μm detector (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2984-2986 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose and demonstrate a 1 Gb/s high quantum efficiency Si MSM metal-semiconductor-metal detector which is complementary metal-oxide semiconductor compatible. The detector absorbs over 50% of the light entering the active layer at a wavelength of λ=0.88 μm. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114251
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  • 20
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    1 Hz linewidth Ti:sapphire laser as local oscillator for 40Ca+ optical clocks (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-06-29
    Description: A Ti:sapphire laser at 729 nm is frequency stabilized to an ultra-stable ultra-low thermal expansion coefficient (ULE) cavity by means of Pound-Drever-Hall method. An acousto-optic modulator is used as the fast frequency feedback component. 1 Hz linewidth and 2 × 10 −15 frequency stability at 1-100 s are characterized by optical beating with a separated Fabry-Perot cavity stabilized diode laser. Compared to the universal method that the error signal feedback to inject current of a diode laser, this scheme is demonstrated to be simple and also effective for linewidth narrowing. The temperature of zero coefficient of the thermal expansion of the ULE cavity is measured with the help of a femto-second frequency comb. And the performance of the laser is well defined by locking it to the unperturbed clock transition line-center of 4 S 1/2 -3 D 5/2 clock transition of a single laser cooled 40 Ca + ion. A Fourier-transform limited resonance of 6 Hz (Δv/v = 1.5 × 10 −14 ) is observed. This laser is also used as the local oscillator for the comparison experiment of two 40 Ca + ion optical clocks and improves the stability of comparison for an order of magnitude better than the previous results.
    Print ISSN: 0034-6748
    Electronic ISSN: 1089-7623
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Published by American Institute of Physics (AIP)
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