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  • 1
    Electronic Resource
    Electronic Resource
    Gettering of bulk impurities by surface damage in Hg0.8Cd0.2Te wafers (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3512-3516 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The residual impurities in Hg0.8Cd0.2Te crystal have been investigated by using secondary-ion mass spectrometry. It was observed that the impurities are richer in near-surface layer than bulk material. This phenomenon was proved to be related to defect gettering by surface damage. In addition, the measurements of Hall effect and infrared spectra in gettered and ungettered Hg0.8Cd0.2Te wafers have been performed. It was found that the electrical properties of gettered Hg0.8Cd0.2Te wafers were superior to ungettered wafers. The absorption edges moved towards shorter wavelengths and the average transmittance increased in gettered wafers. These can probably be explained by assuming the residual impurity concentration in gettered wafers is relatively low. The results indicate that the defect gettering technique can be used to effectively reduce residual impurities in Hg0.8Cd0.2Te wafers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348492
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Intense visible light emission from fullerene-doped silica aerogel (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2801-2803 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report that fullerenes (C60/C70) can be uniformly encased in silica aerogel by sol-gel process together with supercritical drying technique. Intense visible light emission (2.26 eV) is observable with the naked eye from the composite under an Ar+ laser (488 nm) excitation at room temperature. The luminescent intensity is found to increase strongly with low doping of fullerenes (0.05 mol %) and then to decrease while the peak is red shifted, and finally quenched upon heavy doping (up to 2.5 mol %). This effect is consistent with the behavior of the fullerenes entrapped in the micropores linked by the silica networks resulting in the quantum confinement effect which then produce emission far above the interband gap of C60/C70. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358685
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  • 3
    Electronic Resource
    Electronic Resource
    Influence of defect absorption on the absorption edge in Hg0.8Cd0.2Te (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 363-365 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical absorption edges in gettered and ungettered Hg0.8Cd0.2Te alloys have been investigated. It is found that the absorption edge was moved to the short wave direction after the sample was gettered. The change of absorption edge has also been found in Hg0.8Cd0.2Te containing different mercury concentrations. Possible explanations for the phenomena are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103692
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  • 4
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    The electronic structure and thermoelectric properties of BiTl9Te6 and SbTl9Te6: First-principles calculations (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-12-19
    Description: The electronic structure and thermoelectric properties of MTl 9 Te 6 (M = Bi, Sb) were studied using density functional theory and the semiclassical Boltzmann theory. It is found that the band gaps of BiTl 9 Te 6 and SbTl 9 Te 6 are equal to 0.59 eV and 0.72 eV, respectively. The relative large band gap and strong coupling between Sb s and Te p are helpful to the thermoelectric properties of SbTl 9 Te 6 . Near the bottom of the conduction bands, the number of band valleys of SbTl 9 Te 6 is four and is larger than that of BiTl 9 Te 6 (two band valleys), which will increase its Seebeck coefficient. Although BiTl 9 Te 6 has a larger electrical conductivity relative to relaxation time ( σ / τ ) along the z-direction than that of SbTl 9 Te 6 , the results show that the transport properties of SbTl 9 Te 6 are better than those of BiTl 9 Te 6 possibly due to its large Seebeck coefficient. The maximum value of power factor relative to relaxation time (S 2 σ / τ ) for SbTl 9 Te 6 reaches 4.30 × 10 11  W/K 2 m s at 900 K, that is, originated from its relatively large Seebeck coefficient, suggesting its promising thermoelectric performance at high temperature.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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