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  • American Institute of Physics (AIP)  (49,884)
  • 1995-1999  (49,884)
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  • 1
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    El Niño Dynamics (1998)
    American Institute of Physics (AIP)
    In:  Physics Today, 51 (12). p. 32.
    Details
    Publication Date: 2021-02-25
    Description: Bringer of storms and droughts, the El Niño∕Southern Oscillation results from the complex, sometimes chaotic interplay of ocean and atmosphere.
    Type: Article , PeerReviewed
    Format: text
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    PAPER (OCEANREP)
  • 2
    Electronic Resource
    Electronic Resource
    Determination of diffusion in polycrystalline platinum thin films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4902-4907 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Grain boundary diffusion of titanium through platinum thin films has been carried out in the temperature range from 200 to 600 °C. Five different platinum/titanium bilayer thicknesses, from 35 to 800 Å Pt, were annealed in 5% O2/95% N2. The accumulation of titanium at the platinum surface layer was measured by x-ray photoelectron spectroscopy (XPS) to determine the grain boundary diffusion coefficient (Db). Diffusivity values were calculated based on two different analysis methods assuming type C kinetics. For Pt layers thicker than 200 Å, the activation energy (Qb) for titanium diffusion was found to be 118±15 kJ/mol (1.22±0.16 eV). For Pt layers thinner than 200 Å, there was a thickness dependence on the diffusion kinetics, resulting in activation energies as low as 20±4 kJ/mol (0.21±0.04 eV). XPS results gave no evidence for any Pt-Ti alloy formation in these layers. The suppression of alloy formation may be attributed to the presence of oxygen at the Pt/Ti interface during layer deposition. The quantitative analysis of titanium interdiffusion in platinum provides valuable information regarding Pt/Ti surface concentrations in thin-film chemical sensors, and for understanding changes in operational characteristics of platinum electrodes. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371458
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  • 3
    Electronic Resource
    Electronic Resource
    Tensile testing of AlCu thin films on polyimide foils (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4922-4929 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mechanical properties of sputtered AlCu(0.5 wt %) thin films, 0.2–2.0 μm thick, were determined by tensile testing. For comparison, tensile tests were also performed on bulk samples of the same composition. The films were deposited on thin polyimide foils. They were characterized with respect to the surface, microstructure, residual stress, and concentration of copper and oxygen. Stress-strain curves of the films were obtained by separating the force working on the polyimide foil from that working on the metal-polyimide compound. Young's modulus of the films almost corresponded to the bulk value. Films with a thickness 〉1.5 μm broke by formation of macrocracks while thinner films showed formation of microcracks. The Hall–Petch model, additional strengthening by small grain size, and the role of grain boundary sliding for crack formation are discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371461
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  • 4
    Electronic Resource
    Electronic Resource
    Effect of pre-amorphization of polycrystalline silicon on agglomeration of TiSi2 in subquarter micron Si lines (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4943-4948 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the effect of C49-to-C54 conversion behavior on the agglomeration of Ti-silicide fabricated on subquarter micron polycrystalline Si lines by comparing pre-amorphized samples with conventional ones. Pre-amorphization of polycrystalline Si enhances the C49-to-C54 transformation on subquarter micron linewidths, however, it results in the early development of macroscopic grooves during the second rapid thermal annealing. From these results, we suggest the existence of an extra thermal budget during the second rapid thermal annealing of the pre-amorphized samples, which deteriorates the thermal stability of the C54-TiSi2 featured line. It is also shown that C49-to-C54 transformation on a 0.2 μm linewidth in the conventional samples has two kinds of competing factors when postannealing is added. One is the tendency of C54 transformation and the other is agglomeration of C49-TiSi2 grains. During high temperature annealing (〉850 °C), C49-TiSi2 has been agglomerated by a thinning mechanism instead of transformation into the C54 phase. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371523
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  • 5
    Electronic Resource
    Electronic Resource
    Space charge effects in carrier escape from single quantum well structures (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5109-5115 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recently published data on the variation with applied bias and temperature of steady-state photoluminescence and photoconductivity from a series of GaAs/AlGaAs single quantum well p-i-n structures are subjected to detailed theoretical analysis, using phenomenological variables introduced in connection with these results. The data are interpreted as revealing the presence in the well of a space charge, which causes band bending and hence indirectly modifies carrier escape lifetimes. It is shown that the thermionic escape of holes can affect the electron tunneling escape lifetime so that the latter displays a thermal activation energy which is quantitatively similar to the hole well depth. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371487
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  • 6
    Electronic Resource
    Electronic Resource
    Transient electroluminescence of polymer light emitting diodes using electrical pulses (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5116-5130 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Detailed experimental and theoretical analysis of the pulsed excitation of polymer light emitting diodes is presented. We find a set of universal transient features for a variety of device configurations (different polymers/cathodes) which can be reproduced using our phenomenological numerical model. We find that the temporal evolution of the electroluminescence in response to a step voltage pulse is characterized by: (i) a delay followed by; (ii) a fast initial rise at turn-on followed by; (iii) a slow rise (slower by at least one order of magnitude). The large mobility mismatch between holes and electrons in conjugated polymers allows us to separately time resolve the motion of holes and electrons. We suggest a method for extracting mobility values that takes into account the possible field-induced broadening of carrier fronts, and which is found to be compatible with mobilities determined from constant wave measurements. By using appropriate device configurations it is possible to determine the mobilities of both holes and electrons from a single device. Mobilities for holes and electrons are extracted for a poly(p-phenylenevinylene) copolymer and poly(di-octyl fluorene). © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371488
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  • 7
    Electronic Resource
    Electronic Resource
    Structure and magnetization of arrays of electrodeposited Co wires in anodic alumina (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5141-5145 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have produced arrays of Co nanowires in anodic porous alumina filters by means of electrodeposition. The structure and magnetization behavior of the wires was investigated with nuclear magnetic resonance (NMR) and magnetization measurements. NMR shows that the wires consist of a mixture of fcc and hcp texture with the (0001) texture of the hcp fraction oriented preferentially perpendicular to the wires. The magnetization direction is determined by a competition of demagnetizing fields and dipole–dipole fields and can be tuned parallel or perpendicular to the wires by changing the length of the wires. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371490
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  • 8
    Electronic Resource
    Electronic Resource
    Effect of Fe doping in La1−xSrxMnO3 (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5164-5168 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of Fe doping on the magnetic, transport, and magnetoresistance properties are studied for La0.7Sr0.3Mn1−yFeyO3 (y=0–0.18) and La1−xSrxMn0.88Fe0.12O3 (x=0.1–0.50). For increasing y, a peak in the thermal dependence of the resistivity appears and develops at the temperature TPl lower than TC, while the another peak near TC becomes smaller and then disappears. At 78 K the La1−xSrxMn0.88Fe0.12O3 oxides are insulators for x〈0.2 and x〉0.5 and only the lower-temperature metal–insulator transition peak appears for 0.25〈x〈0.45. With increase of x from 0.25, TPl increases, becomes maximum at x=0.4 and then decreases. The temperature dependence of resistivity for the doped samples is quite different from that of the undoped La1−xSrxMnO3 series. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371494
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  • 9
    Electronic Resource
    Electronic Resource
    Abnormal junction leakage characteristics in titanium-capped cobalt disilicide (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5293-5295 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Abnormal junction leakage characteristics in titanium-capped cobalt disilicide were investigated. The cobalt silicide n+-p junctions, fabricated with different capping layers, were characterized by current–voltage measurements and transmission electron microscopy. The reverse junction leakage currents of Ti-capped 13.5-nm-thick cobalt disilicide (CT) are higher than those of TiN-capped samples. The activation energy of CT at temperatures below 80 °C is 0.41 eV, and its dominant leakage mechanism is consistent with phonon-assisted tunneling. Transmission electron microscopy analysis indicates the existence of island phases and precipitates located at the silicide/Si interface, which are titanium disilicide and CoxTi1−xSi2 phases, as evidenced by energy dispersive spectroscopy. As a result, for the case of CT, the reasons for higher junction leakage currents and their field dependence appear to be the result of the diffusion of Ti atoms into CoSi2 grain boundaries and the resulting formation of TiSi2 and CoxTi1−xSi2 phases, which gives rise to a rougher silicide interface and a close spacing between silicide and the junction. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371513
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  • 10
    Electronic Resource
    Electronic Resource
    A noninvasive rf probe for the study of ionization and dissociation processes in technological plasmas (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4100-4106 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A swept frequency absorbance plasma diagnostic technique for measurement of self-resonance frequency, intrinsic plasma-tool distributed capacitance, radiative energy loss, and effective plasma capacitance is described. The ex situ probe measures the plasma properties independently of all contributions from the plasma-tool and transmission line connection to the rf supply. The technique employs a swept frequency source and a balanced equal ratio arm bridge to measure the frequency response of the plasma tool after the plasma has been extinguished under plasma conjugate matching conditions. The resonant frequency of the combination of capacitances due to plasma-tool geometry (intrinsic capacitance, Ci) and the matching network (Cm) exhibits a shift from the excitation frequency (13.56 MHz) that is dependent on the effective plasma capacitance. Resonance frequency shift data are given for He, Ne, Ar, O2, N2, and N2O as a function of both pressure (0.02–0.8 mbar) and incident power (50 and 100 W). This technique allows the differentiation between dissociation and ionization processes within the plasma through a simple noninvasive rf measurement. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371334
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