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  • American Institute of Physics (AIP)  (26,481)
  • 2000-2004  (26,481)
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  • 1
    Electronic Resource
    Electronic Resource
    Ab initio study of structure in boron nitride, aluminum nitride and mixed aluminum boron nitride amorphous alloys (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5028-5032 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Car–Parrinello molecular dynamics is applied to the liquid quench simulation of the amorphous networks of BN, AlN and AlBN2. Structural and elastic properties were determined. It is found that AlN has a stronger tendency to chemical order than BN, driven by the greater energy penalty for "wrong bonds." AlN, however, has a stronger tendency to form an amorphous structure as judged by the energy difference between the crystalline and amorphous states. There is some experimental evidence for an amorphous form of AlN. BN was simulated at two densities, 2.0 and 3.0 g/cm3. Even at the higher density, the fraction of tetrahedral coordination remained low, in contrast to AlN, enabling us to predict that the tetrahedral amorphous form of BN does not form under liquid quench conditions. The amorphous network with the formula AlBN2 has an intermediate tendency to form a tetrahedral structure and has a relatively high elastic modulus. This material is predicted to be of value for application as a wear resistant coating. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1316790
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  • 2
    Electronic Resource
    Electronic Resource
    Stiffness of compressed fiber mats (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5056-5061 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate, using an analytical and a numerical model, the in-plane stiffness of fiber mats. A mat is modeled by randomly depositing thin linear-elastic fibers on top of each other under the influence of an external pressure. The external pressure has the effect of bending the fibers over each other. The fibers are assumed rigidly bonded at contacts. For a low external pressure the stiffness of the mat deviates from that of its two-dimensional projection only by a geometrical factor, and the effective Poisson contraction is close to zero. For higher pressures, stiffness is governed by two competing effects and a maximum appears in the stiffness. The effective Poisson ratio is clearly negative in this range. An approximative analytical description is developed for the stiffness of mats formed under low external pressure. The stiffness is given as a function of only a few parameters: the degree of bonding, the dimensions of the fibers, the elastic constants of the fiber material, and the density of fibers. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1315622
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  • 3
    Electronic Resource
    Electronic Resource
    Annealing effect on electron field-emission properties of diamond-like nanocomposite films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5087-5092 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The field-emission properties of a Si–O bond-containing diamond-like nanocomposite (DLN) film were investigated as a function of annealing temperature (Ta). It was found that with increasing Ta the emission threshold voltage decreased gradually. After annealing at Ta=500 °C, the emission current decreased significantly. At Ta=700 °C, however, the field-emission properties of the DLN film improved greatly, the threshold field became very low (∼1.5 V/μm), and the emission current rather high (e.g., ∼2.3 μA/mm2 at an electric field of 22 V/μm). The structural variation of the film after annealing at different temperatures was monitored by ultraviolet Raman spectroscopy, spectroscopic ellipsometry, atomic-force microscopy, and electrical resistivity measurements. By using a three-step model: (i) electron injection from the substrate, (ii) electron transport through the film, and (iii) electron emission at the film surface, the annealing effect on field-emission properties of the DLN film were qualitatively interpreted. It is believed that the threshold electric field is determined by the local electron affinity on the film surface, while the emission current is mainly limited by electron injection and transport processes. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1319166
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  • 4
    Electronic Resource
    Electronic Resource
    Effect of polyatomic ion structure on thin-film growth: Experiments and molecular dynamics simulations (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5004-5016 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The experiments described here examine 25–100 eV CF3+ and C3F5+ ion modification of a polystyrene (PS) surface, as analyzed by x-ray photoelectron spectroscopy. The molecular dynamics computer simulations probe the structurally and chemically similar reactions of 20–100 eV CH3+ and C3H5+ with PS. CF3+ and C3F5+ each form a distribution of different fluorocarbon (FC) functional groups on PS in amounts dependent upon the incident ion energy, structure, and fluence. Both ions deposit mostly intact upon the surface at 25 eV, although they also undergo some crosslinking upon deposition. Fragmentation of the two ions increases as the ion energies are increased to 50 eV. Both ions show increases in total fluorine and fluorinated carbon content when changing the ion energy from 25 to 50 eV. The simulations predict that CH3+ and C3H5+ behave in a similar fashion to their FC analogs, remaining mostly intact and either embedding or scattering from the surface without reacting at 20 eV. At 50 and 100 eV, the simulations predict fragmentation most or all of the time. The simulations also show that the chemical products of the collisions depend significantly on the structure of the incident isomer. The simulations further illustrate how the maximum penetration depth of ion fragments depends on ionic structure, incident energy, and the identity of the penetrating fragment. These ion–surface results are discussed in terms of their possible role in plasmas. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1315329
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  • 5
    Electronic Resource
    Electronic Resource
    Coupled-flux nucleation modeling of oxygen precipitation in silicon (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5062-5070 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental data for oxygen precipitation densities in Czochralski-grown silicon following multistep annealing treatments are compared with predictions from a coupled-flux model for time-dependent nucleation. This is a more correct model for diffusion-controlled nucleation processes than is the classical theory of nucleation since it directly couples the two stochastic fluxes of interfacial attachment and long-range diffusion. Quantitative agreement is obtained between the measured and calculated densities for nucleation temperatures greater than 650 °C. Good agreement is obtained for lower temperatures if the oxygen diffusion rate is taken to be larger than is predicted from high-temperature diffusion data. The fit values for the diffusion coefficient from the nucleation data are in good agreement with recent results from dislocation-unlocking experiments. The oxygen loss calculated by coupled-flux nucleation and diffusion-limited growth agrees with the experimental observations. Classical theory nucleation calculations predict a much greater oxygen loss, signaling the failure of the theory to correctly treat nucleation when long-range diffusion is important, true in most solid-state precipitation processes. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1311309
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  • 6
    Electronic Resource
    Electronic Resource
    The microstructure of submicrometer wide planar-reactive ion etched versus trench-damascene AlCu lines (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5093-5099 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure was measured for AlCu lines, formed using either a traditional planar metal subtractive etch process or a newly developed hot AlCu-trench-damascene process. It was found that 0.35 μm wide damascene AlCu lines formed a large grained bamboo microstructure with little or no Al (111) texture. The local crystallographic texture was measured in a scanning electron microscope using electron backscatter pattern analysis often referred to as backscatter Kikuchi diffraction. Damascene structures consisted of AlCu films deposited at greater than 400 °C onto Ti or Ti/TiN into preformed amorphous SiO2 trenches, 0.3–5.0 μm wide by 0.4 μm deep, followed by aluminum chemical mechanical polishing to remove the metal overburden. Standard planar metal control samples consisted of blanket Al or AlCu films deposited onto either an amorphous SiO2 substrate or onto SiO2/Ti/TiN substrates, followed by subtractive etching to define 0.45–10 μm wide lines as well as large (e.g., 10×10 μm2) pads. The planar metal samples exhibited either little change or a slight strengthening of their (111) fiber texture with decreasing line width; this was in sharp contrast to the damascene films in which a marked weakening in the (111) fiber texture with decreasing line width was found. In addition a trimodal (111) texture distribution developed in trenches where TiAl3 intermetallic formed. The role of intermetallic formation (TiAl3), elevated (〉400 °C) AlCu deposition temperature, large bamboo grain size, local AlCu crystallographic texture and differences in sidewall coverage between subtractive etched and trench-damascene processed AlCu on film microstructure are examined. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1314612
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  • 7
    Electronic Resource
    Electronic Resource
    Cross sections for anion formation within solids by electron capture: CF4 embedded in solid Kr (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5211-5220 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We discuss in detail the considerations necessary to determine the absolute stable anion formation (SAF) cross section for a molecule embedded within the bulk of condensed matter, using the low energy electron transmission (LEET) method. We show that the LEET method is applicable at any energy below the ionization potential of the charge trapping molecule and the first exciton energy of the matrix. As an example, charge trapping due to SAF from CF4 molecules is investigated. In order to generalize the LEET method, we solve in the Appendix a classical electrostatic boundary value problem using the method of images for a charge embedded in a dielectric medium surrounded by two other media of different dielectrics. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1314324
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  • 8
    Electronic Resource
    Electronic Resource
    Analytical modeling of stress-induced leakage currents in 5.1–9.6-nm-thick silicon-dioxide films based on two-step inelastic trap-assisted tunneling (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5238-5245 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thickness dependence of stress-induced leakage currents (SILCs) has been investigated for silicon-dioxide films with thicknesses between 5.1 and 9.6 nm. Assuming a two-step trap-assisted tunneling process accompanied by an energy relaxation process of trapped electrons, a set of analytical equations is given, which describes quantitatively the SILC dependence on oxide electric field with trap site location, trapped sheet charge density, and trap state energy as characteristic trap site parameters. Applying this model to the SILC data of 5.1–9.6-nm-thick silicon-dioxide films, the best agreement between experimental and calculated I–V data is achieved by a constant trap state energy of 1.93 eV relative to the silicon-dioxide conduction-band edge. Trap sites are located at 4.24 nm from the gate interface for 6.8–9.6-nm-thick films, while the 5.1 nm film exhibits a slightly different trap site location of 4.08 nm. The trapped sheet charge density Qtrap increases linearly with oxide thickness from −0.34×10−6 to −1.29×10−6 C/cm2. As a result, the thickness dependence of Qtrap suppresses the local tunneling current between the gate injection interface and trap sites by a reduction of the local oxide electric field. This fact explains the decrease of SILC with an increase in oxide thickness. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1312842
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  • 9
    Electronic Resource
    Electronic Resource
    Electronic and isochronal annealing properties of electron traps in rapid thermally annealed SiO2-capped n-type GaAs epitaxial layers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5255-5261 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have recently shown [P. N. K. Deenapanray et al., Appl. Phys. Lett. 77, 626 (2000)] that four electron traps S1(Ec−0.23 eV), S2(Ec−0.46 eV), S3(Ec−0.72 eV), and S4(Ec−0.74 eV) are introduced in rapid thermally-annealed (RTA) SiO2-capped n-type GaAs epitaxial layers. In the present study, we have used deep level transient spectroscopy to investigate the electronic and annealing properties of these deep levels. The electron emission kinetics of S1 is enhanced by an electric field, and the activation energy of S1 decreases linearly from ∼233 to ∼199 meV when the field is increased from 7.5×104 to 13.4×104 V cm−1. The intensities of S1, S2, and S4 show Arrhenius-like dependencies on the RTA temperature, which relate to the outdiffusion of Ga atoms into the SiO2 layer. The intensity of S2(VGa–SiGa) also increases exponentially with the square of the annealing time for RTA at 800 °C. Isochronal annealing experiments show that S1 and S2 are thermally stable below 500 and 400 °C, respectively. S4, which is a member of the EL2 family, is stable up to 600 °C. Secondary defects are introduced during isochronal annealing above 400 °C, and some of these defects are thermally stable at 600 °C. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1314907
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  • 10
    Electronic Resource
    Electronic Resource
    Principles for the design and operation of a molecular wire transistor (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5280-5282 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We explore theoretically the fundamental principles of design and operation of a three-terminal molecular wire transistor that consists of a single π-conjugated carbon chain molecule with thiol end groups (CnHn−2S4), self-assembled on the cleaved edge of a multilayer of alternating thin gold and insulating films. The ends of the chain bond to two outer gold layers that act as source and drain, and the chain bridges a third (inner) gold layer that acts as a gate. We show that transistor action should occur in this device if sulfur atoms are adsorbed on the surface of the gold gate. The sulfur atoms acquire charge as the gate voltage is increased, thereby enhancing the interaction between the gate and molecule and creating a strong potential barrier that hinders electron flow along the molecular wire. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1315627
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