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  • Articles  (24)
  • 72.20  (24)
  • Springer  (24)
  • 1980-1984  (24)
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (24)
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  • Articles  (24)
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  • Springer  (24)
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (24)
  • Physics  (25)
  • 1
    Electronic Resource
    Electronic Resource
    Hot electron diffusion in CdTe (1983)
    Springer
    Applied physics 30 (1983), S. 189-193 
    Details
    ISSN: 1432-0630
    Keywords: 72 ; 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The parallel and transverse components of diffusion constants of electrons in CdTe have been computed for fields of 30, 40, and 50 kV/cm using the Monte Carlo method. Results are presented for the velocity autocorrelation function and for the ac diffusion constants for two models of energy band structure and scattering constants, used earlier in the literature. The diffusion constants as obtained from the two models are significantly different, but none are in agreement with the available experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620539
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  • 2
    Electronic Resource
    Electronic Resource
    Laser-induced free-carrier absorption in Si single crystal (1984)
    Springer
    Applied physics 33 (1984), S. 107-111 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 79.20 ; 81
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The transmitted energy density in thin single Si crystal, wafers is measured atλ=1.06 μm as a function of the incident energy density for a Nd laser pulse of 30 ns duration. Non-linear effects begin to become important at about 0.3 J/cm2. The contribution due to free-carriers is separated from the interband one by using measurements made at low energy density and at different sample temperatures in the 20°–150 °C range. The time dependence of the free-carrier concentration and of the lattice temperature is computed for different values of the Auger constant. The experimental data in the 0.2–2.5 J/cm2 energy density range are fitted with an Auger constant of 10−30 cm6s−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617616
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  • 3
    Electronic Resource
    Electronic Resource
    On the annealing behaviour of the Staebler-Wronski effect ina-Si:H (1984)
    Springer
    Applied physics 35 (1984), S. 9-12 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 73.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The kinetics of the Staebler-Wronski effect ina-Si:H were investigated experimentally. The rate of recovery from the illuminated state B to the annealed state A was observed at various temperatures in undoped,n- andp-dopeda-Si:H. The data can be characterized by a thermally activated relaxation time with an activation energy decreasing with increasing doping concentration. The results are compared with previous data and existing models.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00620293
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  • 4
    Electronic Resource
    Electronic Resource
    Dielectric properties of titanium and gadolinium doped MgO single crystals (1982)
    Springer
    Applied physics 29 (1982), S. 29-32 
    Details
    ISSN: 1432-0630
    Keywords: 66 ; 72.20 ; 77.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The dielectric properties of titanium doped magnesium oxide (Ti/MgO) and gadolinium doped magnesium oxide (Gd/MgO) single crystals have been measured at room temperature over the frequency range 500 Hz to 50 kHz. For both the crystals, the dielectric constantɛ′ is found to be independent of frequency and the ac conductivity Re{σae} agrees well with the relation Re{σae}∫Ω n ,Ω being the angular frequency with n=0.84±0.05 for Ti/MgO andn=0.81±0.03 for Gd/MgO. The data fits well with the relationɛ″∫Ω n−1(n〈1),ɛ″ being the dielectric loss factor. An explanation may be found on the basis of the hopping phenomenon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618112
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  • 5
    Electronic Resource
    Electronic Resource
    Dielectric relaxation and AC conduction of an AgTlSe2 semiconductor in the solid and liquid states (1982)
    Springer
    Applied physics 29 (1982), S. 39-44 
    Details
    ISSN: 1432-0630
    Keywords: 77 ; 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Measurements of the dielectric properties of AgTlSe2 in the solid and liquid states were carried out in a wide range of frequencies and temperatures. The material displayed dielectric dispersion, and a loss peak was observed. Cole-Cole diagrams have been used to determine the distribution parameter (a) and the molecular relaxation time (Τ). The process of dielectric relaxation (loss) and ac conduction was attributed to the correlated barrier hopping model suggested by Elliott for amorphous solids, where two carriers simultaneously hop over a barrier between charged defectD + andD − states.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618114
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  • 6
    Electronic Resource
    Electronic Resource
    Electron mobility in compensated VPE GaAs films (1980)
    Springer
    Applied physics 23 (1980), S. 37-40 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 73.60 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Electron Hall mobilities were measured on a series of intentionally compensated vapor phase epitaxy (VPE) GaAs layers. Using Sn and Zn as dopants, compensation ratiosK=(ND+NA)/(ND-NA) as high as 50 were obtained. Already for samples with the lowestK values the 300 K mobilities are higher than the 77 K values. In the range 20〈T〈100 [K] the data may be represented by μ∼T α with α increasing from 0.6 to 1.1 with compensation. The experimental μ values are smaller than those predicted from current models in all cases. It appears that scattering at ionized impurities is the dominant process also at temperatures well above 77 K, and that this scattering process is quantitatively underestimated in current models.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00899568
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  • 7
    Electronic Resource
    Electronic Resource
    Effect of temperature on the validity of the einstein relation in heavily doped semiconductors (1980)
    Springer
    Applied physics 23 (1980), S. 241-244 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An analytical expression of the modified form of the Einstein relation in heavily doped semiconductors in which Gaussian band tails are formed near the lower limit of heavy doping is derived for studying the temperature dependence of the diffusivity-mobility ratio of the carriers in such semiconductors. It is found that, with increasing temperature from relatively low values, the ratio first increases in a nonlinear manner and then decreases till, at high temperatures, it approaches its value corresponding to the non-degenerate condition resulting in a peak over a narrow range of temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00914906
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  • 8
    Electronic Resource
    Electronic Resource
    Arsenic-implanted polysilicon layers (1981)
    Springer
    Applied physics 24 (1981), S. 197-200 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 73 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The diffusion behavior of implanted arsenic in polycrystalline silicon was investigated, using backscattering and electrical measurements. The diffusion coefficient isD=8.5×10−3 exp (−2.74/kT) for polycrystalline silicon deposited on freshly-etched silicon andD=1.66 exp (−3.22/kT) for the deposition on silicon having natural oxide. At the interface to the single-crystalline silicon, a pile-up of arsenic occurs, which depends also on the surface treatment prior to the deposition of the polycrystalline silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00899755
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  • 9
    Electronic Resource
    Electronic Resource
    Oscillatory effective mass in degenerate narrow-gap semiconductors in a quantizing magnetic field (1981)
    Springer
    Applied physics 25 (1981), S. 105-108 
    Details
    ISSN: 1432-0630
    Keywords: 85.30 ; 72.20 ; 72.15
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An attempt is made to study the effect of a quantizing magnetic field on the effective electron mass in degeneraten-type narrow-gap semiconductors at low temperatures. It is found, takingn-Hg1−x Cd x Te as an example, that the effective electron mass shows an oscillatory magnetic-field dependence as is expected because of the dependence of the effective mass in degenerate non-parabolic bands on Fermi energy which oscillates with changing magnetic field. The amplitude of oscillations is, however, found to be significantly influenced by the alloy composition whereas the period is found to be independent of the band non-parabolicity, i.e. of the compositional parameter in ternary semiconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00901280
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  • 10
    Electronic Resource
    Electronic Resource
    On the determination of thermal ionization energy of deep centers from ESR data (1983)
    Springer
    Applied physics 30 (1983), S. 105-107 
    Details
    ISSN: 1432-0630
    Keywords: 76.30 ; 72.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract It is shown that the skin effect due to thermal generation of free carriers may affect the ESR signal more than deep center depopulation. Experimental results for 0.33 eV deep Eu2+ donor in CdF2 crystals are presented, to show the way in which the thermal energy of deep centers is deduced from the ESR data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00614911
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