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  • Articles  (33)
  • 42.80  (33)
  • Springer  (33)
  • 1980-1984  (33)
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (33)
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  • Articles  (33)
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  • Springer  (33)
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (33)
  • Physics  (89)
  • 1
    Electronic Resource
    Electronic Resource
    Generation of tunable picosecond light pulses covering the frequency range between 2700 and 32,000 cm−1 (1980)
    Springer
    Applied physics 23 (1980), S. 113-119 
    Details
    ISSN: 1432-0630
    Keywords: 42.65 ; 42.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The travelling-wave parametric process allows the generation of intense picosecond pulses tunable between 2700 and 17,000 cm−1. Angle- and temperature tuning was investigated using LiNbO3 crystals of different cuts. Various factors determining the bandwidth of the new pulses are evaluated and experimental spectra are presented. Frequency doubling readily leads to light pulses up to 32,000 cm−1. The jitter of two parametric systems operating in parallel is less than 1 ps for pump pulses of 7 ps.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00899704
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  • 2
    Electronic Resource
    Electronic Resource
    Quasi-optics of the group delay of guided magnetic waves (1980)
    Springer
    Applied physics 23 (1980), S. 141-147 
    Details
    ISSN: 1432-0630
    Keywords: 42.10 ; 85.70 ; 42.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The wave-packet of a magnetic wave on reflection at an interface between a ferrimagnetic medium and free space is shown to undergo no lateral shift but only a time delay. The time delay introduced on reflection is included to obtain a quasi-optical description for the group delay of a magnetic wave guided by a planar slab of ferrimagnet in free space for the case of the magnetizations (a) normal to the surfaces of the slab, and, (b) parallel to the surfaces of the slab and to the direction of propagation. The group delay of the guided magnetic wave is caused partly by the group delay produced in the bulk of the ferrimagnet and partly by the group delay produced on reflections. The characteristics of these two contributions to the resultant group delay of the guided magnetic wave are examined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00899709
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  • 3
    Electronic Resource
    Electronic Resource
    New TEA-lasers based onD′→A′ transitions in halogen monofluoride compounds: ClF (284.4 nm), BrF (354.5 nm), IF (490.8 nm) (1980)
    Springer
    Applied physics 23 (1980), S. 283-287 
    Details
    ISSN: 1432-0630
    Keywords: 42.55 ; 42.80 ; 33
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract As an outcome of a systematic study of excitation kinetics and fluorescence spectra concerning theD′(3π2u )→A′(3π2g ) transitions in homonuclear diatomic halogens and corresponding transitions in interhalogen molecules [1], this paper describes, for the first time, TEA laser action in the three halogen monofluorides ClF, BrF, and IF. Output energies in the mJ range were demonstrated in a fast TEA discharge arrangement at the wavelengths of 284.4, 354.5, and 490.8 nm for ClF, BrF, and IF, respectively. The results suggest parameter scalability and wavelength tunability.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00914912
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  • 4
    Electronic Resource
    Electronic Resource
    The influence of intrisic defects on the degradation and luminescence of GaAs and other III–V compounds (1980)
    Springer
    Applied physics 23 (1980), S. 303-309 
    Details
    ISSN: 1432-0630
    Keywords: 42.80 ; 61.70 ; 61.80 ; 78.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A significant contribution to the degradation of GaAs-based lasers and light-emitting diodes arises from the formation of so-called dark line defects. It is shown that these defects are accumulations of non-radiative recombination centres around dislocations. The centres are identified as As vacancies, which are emitted by climbing dislocations, concomitantly with the absorption of Ga interstitials. From scanning deep-level transient spectroscopy observations it is concluded that the so-called DX centres are Ga interstitials. The driving force for dislocation climb and thus for dark-line-defect formation is a supersaturation of Ga interstitials originating from the growth of the GaAs crystals under Ga-rich conditions as a consequence of the high volatility of As. Phenomena in other III–V compound semiconductors related to the formation of dark line defects in GaAs are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00914916
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  • 5
    Electronic Resource
    Electronic Resource
    Fundamental absorption edge of evaporated amorphous WO3 films (1981)
    Springer
    Applied physics 24 (1981), S. 55-59 
    Details
    ISSN: 1432-0630
    Keywords: 78.20 ; 42.80 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The fundamental absorption edge of evaporated WO3 films is investigated. The optical gap of the virgin film is estimated to be 3.41 eV at room temperature and it decreases with increase of annealing temperature up to 200°C. Annealing at 300°C leads to change in the spectral shape, which is caused by crystallization. For the films annealed at 200°C, temperature coefficient of the optical gap is estimated to be −2×10−4 eV/K and the slope of Urbach's tail is found to be independent of measuring temperature up to 200°C. With electrolytic coloration, shift of the optical gap toward higher energy is observed. Magnitude of this shift is estimated to be 0.05 eV at the color center concentration of 7.5×1021 cm−3 when H+ electrolyte is used. If Li+ electrolyte is used, the magnitude of this shift is about three times larger than in the case of H+ electrolyte. This fact is interpreted by a small change in the host matrix structure owing to the injection of proton or Li+ during coloration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00900398
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  • 6
    Electronic Resource
    Electronic Resource
    Free-running ruby laser annealing of boron implanted silicon (1981)
    Springer
    Applied physics 26 (1981), S. 243-246 
    Details
    ISSN: 1432-0630
    Keywords: 61.80 ; 42.80 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An analytical treatment of the thermal phenomena during free-running ruby laser annealing of boron implanted silicon is presented. The heat equation was solved for a simplified shape of the pulse train consisting of a uniform succession of triangular spikes, identical in energy. During one spike the optical and thermal parameters of the sample were taken constant, but for each new spike, new values of these parameters were calculated taking into account their temperature dependence. Such a model predicts the melting of the top surface before the laser pulse has ended, for energy densities higher than 9×104 J/m2. RHEED confirms the presence of recristallization at about the same value of the laser-pulse energy densities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617845
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  • 7
    Electronic Resource
    Electronic Resource
    Time delays in lead-salt semiconductor diode lasers (1984)
    Springer
    Applied physics 33 (1984), S. 181-182 
    Details
    ISSN: 1432-0630
    Keywords: 42.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Time delays of typically 15–17μ have been measured directly for PbS1−xSex, Pb1−xSnxSe and Pb1−xSnxTe diode lasers at injection levels just above threshold in each case. The corresponding minority carrier lifetimes, as determined using the one-carrier injection model, were typically 2–4μ.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618753
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  • 8
    Electronic Resource
    Electronic Resource
    The dielectric constant of PbTe at 4.2 K and $$\tilde v$$ =84.15 cm-1, 96.97cm−1, 103.60cm−1 (1982)
    Springer
    Applied physics 28 (1982), S. 229-233 
    Details
    ISSN: 1432-0630
    Keywords: 77 ; 42.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The dielectric constant of a PbTe epitaxial layer has been measured by surface wave spectroscopy using an optically pumped far-infrared laser and the technique of attenuated total reflection.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618699
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  • 9
    Electronic Resource
    Electronic Resource
    Holography with guided optical waves (1980)
    Springer
    Applied physics 21 (1980), S. 55-64 
    Details
    ISSN: 1432-0630
    Keywords: 42.30 ; 42.80 ; 42.82
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Waveguide holograms are recorded in a storage material layer covering a planar dielectric waveguide with a guided mode as reference wave. They are also read-out with a guided mode. In the storage material, assumed to have a lower refractive index than the waveguiding film, the fields of the reference and of the read-out wave are evanescent waves. We describe the preparation of the epoxy resin (Araldit) waveguides on glass substrates, their coating with a dichromated gelatin (DCG) layer as storage material, the processing of the DCG, and the recording and reconstruction techniques. Waveguide holograms of good quality with a size of several square centimeters have been realized for the first time. The holograms were recorded and read-out with wavelength λ=488 nm. They have a length of about 25 mm and a width of 17 mm. To obtain holograms that wide a special prism coupler had to be used which allowed to couple in a laser beam of elliptical cross section, and thus to excite a guided reference or read-out mode with a width of 17 mm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00886483
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  • 10
    Electronic Resource
    Electronic Resource
    Epitaxial growth of ferroelectric PLZT thin film and their optical properties (1980)
    Springer
    Applied physics 21 (1980), S. 339-343 
    Details
    ISSN: 1432-0630
    Keywords: 42.80 ; 78.20 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A series of experiments for growing epitaxial PLZT thin films has been made with rf sputtering. X-ray and electron diffraction analyses confirm that the fabricated films grow epitaxially on SrTiO3 and MgO crystals. A good transparency in the region above 0.4 μm to infrared with good ferroelectric properties is obtained. Propagation loss of He−Ne laser light is less than 6 dB/cm, and the PLZT thin film is a promising candidate for the optical modulator and other functional elements for integrated optics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00895925
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