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  • Articles  (201)
  • Chemistry  (201)
  • Surface physics, nanoscale physics, low-dimensional systems
  • 1990-1994  (201)
  • Electrical Engineering, Measurement and Control Technology  (201)
  • 1
    Electronic Resource
    Electronic Resource
    Masthead (1992)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992) 
    Details
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860010101
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  • 2
    Electronic Resource
    Electronic Resource
    Excimer laser projection etching of copper foils in chlorine gas (1992)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 51-57 
    Details
    ISSN: 1057-9257
    Keywords: Copper ; Etching ; Excimer ; Laser ; Chlorine ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Low-fluence XeCl laser etching of copper foils in a chlorine environment has been studied. The etch rate is fluence-dependent in the range 0.05-1.0 J cm-2 and is governed by the growth characteristics of the chloride layer formed in the interpulse period. Projection etching with good pattern reproduction and resolution for high-aspect-ratio features is demonstrated.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860010202
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  • 3
    Electronic Resource
    Electronic Resource
    Hole transport in p-diethylamino-benzaldehyde-diphenyl hydrazone (1992)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 73-80 
    Details
    ISSN: 1057-9257
    Keywords: Disorder formalism ; Hole transport ; p-diethylamino-benzaldehyde-diphenyl hydrazone ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Hole mobilities have been measured in vapour-deposited films of p-diethylamino-benzaldehyde-diphenyl hydrazone (DEH). The results are described by a model based on hopping through a manifold of sites broadened by energetic and positional disorder. The application of the model leads to the conclusion that the width of the density of hopping states is influenced by dipolar disorder due to dipole moments of the DEH molecules. In comparing the results with those observed in other molecular solids, the degree of positional disorder is shown to be relatively small.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860010205
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  • 4
    Electronic Resource
    Electronic Resource
    Theory of molecular optoelectronics. X: Calculations for MBANP and NMBA (1992)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 65-71 
    Details
    ISSN: 1057-9257
    Keywords: Optoelectronics ; Non-linear optics ; Molecular crystals ; Polarizability ; Hyperpolarizability ; Local field ; Dipole interactions ; MBANP ; NMBA ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Components of the crystal quadratic susceptibility tensor x(2) for second-harmonic generation are calculated for the title compounds 2-(α-methyl benzylamino)-5-nitropyridine (MBANP) and 4-nitro-4'-methyl(benzylidene aniline) (NMBA). Input data are the crystal structure and refractive indices and CNDO hyperpolarizabilities. The calculations also yield effective polarisabilities and local electric fields. Susceptibility components reach 66 pm V-1 in MBANP and 27 pm V-1 in NMBA in the crystal axes; agreement with experiment is poor for MBANP but satisfactory for NMBA. These features seem to reflect the better defined charge transfer axis in NMBA. Screened dipole-dipole interactions calculated from CNDO dipole moments stabilise MBANP by 70 kJ mol-1 and NMBA by 20 kJ mol-1 and imply permanent electric fields of a few GV m-1.
    Additional Material: 12 Tab.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860010204
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  • 5
    Electronic Resource
    Electronic Resource
    Metal sulphide thin film photography with lead sulphide thin films (1992)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 139-145 
    Details
    ISSN: 1057-9257
    Keywords: Thin film ; Metal sulphide ; Photography ; Lead sulphide ; MSTF ; Photo-accelerated ; chemical deposition ; Solar irradiation ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Metal sulphide thin film (MSTF) photography based on photo-accelerated chemical deposition (PACD) of PbS thin films is described. Here an intensity distribution over the surface of a growing PbS thin film produces a thickness variation (0.06-0.15 μm) of the film which, when viewed under daylight, yields a specularly reflective image. Under 800 W m-2 of solar radiation a bluish MSTF photographic image (0.15 μm film thickness) on a coppery-bronze background (0.08 μm) is obtained in the PACD of PbS at the end of 25 min deposition when a high-contrast photographic negative is used as the object. The best contrast of 0.46 in the PbS MSTF photography in the reflection mode is obtained under the above condition of exposure when the optical transmission in a photographic negative in the image area is ∽30% and that in the background is ∽1%. The contrast available in the transmission mode in the MSTF photographic image is considerably less: ∽0.28 (maximum) for optical transmission of 1% and 100% in the background and image areas of the photographic negative respectively.
    Additional Material: 9 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860010307
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  • 6
    Electronic Resource
    Electronic Resource
    The characterisation of GaAs on silicon using polarised laser light (1992)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 189-195 
    Details
    ISSN: 1057-9257
    Keywords: Ellipsometry ; GaAs ; Silicon ; Surface roughness ; MBE ; SEM ; Rotating polariser multiple-angle-of-incidence ellipsometer ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: MBE-grown gallium arsenide epitaxial layers on silicon, with thicknesses between 0.1 and 8.1 μm, have been studied using a simple rotating polariser multiple-angle-of-incidence ellipsometer. From these data, information on the roughness of the surfaces of the layers and the anisotropy of the refractive index of the layers has been obtained. The results are compared with data obtained on the same samples using scanning electron microscopy and conventional spectroscopic ellipsometry.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860010405
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  • 7
    Electronic Resource
    Electronic Resource
    Peculiarities of silicon carbide crystal growth under the diffusion mechanism of vapour transfer (1992)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 203-207 
    Details
    ISSN: 1057-9257
    Keywords: Growth ; Silicon carbide ; Monocrystals ; Vapour phase ; Diffusion ; Supersaturation ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: In the present work the gas dynamics in the growth zone of SiC crystals is investigated. It is shown that the propagation of SiC vapour from the growth cavity walls towards the lids is effected by diffusion. On this basis the calculation of the concentration distribution of SiC vapour (n), the equilibrium vapour concentration (ns) and the supersaturation (α = [(n - ns)/ns] × 100%) in the crystal growth zone at different radial and axial gradients is carried out by solving the Laplace equation in cylindrical co-ordinates for a stationary case corresponding to the conditions of crystal growth. The results obtained are compared with the available experimental data, which gives the possibility of explaining some of the observed peculiarities during SiC crystal growth from the vapour phase by the sublimation method.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860010407
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  • 8
    Electronic Resource
    Electronic Resource
    Metal-Organic chemical vapour deposition of polycrystalline tetragonal indium sulphide (InS) thin films (1992)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 229-233 
    Details
    ISSN: 1057-9257
    Keywords: Indium sulphide ; Metal-organic chemical vapour deposition ; Thin films ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The dimeric indium thiolate [(tBu)2In(μ-StBu)]2 has been used as a single-source precursor for the metal-organic chemical vapour deposition (MOCVD) of InS thin films. The dimeric In2S2 core is proposed to account for the formation of the non-equilibrium high-pressure tetragonal phase in the deposited films. Analysis of the deposited films has been obtained by transmission electron microscopy (TEM), with associated energy-dispersive X-ray analysis (EDX) and X-ray photoelectron spectroscopy (XPS).
    Additional Material: 3 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860010504
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  • 9
    Electronic Resource
    Electronic Resource
    Ultralow-Dielectric-Constant foams by crystallisation from supercritical solution: Application to advanced electronic packaging (1992)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 249-253 
    Details
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Accurate moulding of polymer foams of density 0.02-0.3 g cm-3 has been achieved by crystallising polyethylene and ethylene/methlacrylate copolymers from dry supercritical solutions. Adherent thick films can be sealed to electronic substrates and are proposed as insulating layers for interconnections on multichip modules and other high-speed electronic devices. The dielectric constant achieved for films of several-mil thickness is between 1.05 and 1.3 and can be tailored along with the physical properties of the film by adjusting the density and composition of the copolymer. Planarisation or complex patterning is possible by detailing the mould.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860010507
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  • 10
    Electronic Resource
    Electronic Resource
    L. L. Hench and J. K. West. Chemical processing of advanced materials, Wiley-Interscience, New York, 1992, 1048 pp. (1993)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 2 (1993), S. 149-149 
    Details
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860020308
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  • 11
    Electronic Resource
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    J. G. Eden. Photochemical vapour deposition. Chemical Analysis - A series of monographs on Analytical Chemistry and Its Applications, series edited by J. E. Winefordner and I. M. Kolthoff Wiley, New York, 1992 ISSN 0069-2883 v + 122 pp. (1993)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 2 (1993), S. 150-151 
    Details
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860020310
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  • 12
    Electronic Resource
    Electronic Resource
    Electroluminescence from phenylenevinylene-based polymer blends (1993)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 2 (1993), S. 197-204 
    Details
    ISSN: 1057-9257
    Keywords: Organic ; LEDS ; Electroluminescence ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The electroluminescent behaviour of films of poly(phenylphenylenevinylene) (PPPV), of PPPV blended with polystyrene (PS) and of PS doped with oligo(phenylenevinylene) sandwiched between indium-tin oxide (ITO) and Al contacts has been investigated. Polymer blending increases the relative quantum efficiency by up to two orders of magnitude. Studying the cell performance under application of rectangular voltage pulses as a function of temperature indicates that (i) hole injection at the ITO contact occurs by tunnelling, (ii) tunnel injection of electrons at the cathode is promoted by a space charge field across an interfacial Al2O3 layers and (iii) leakage of holes through the cathodic barrier is the main loss mechanism for holes.
    Additional Material: 9 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860020407
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  • 13
    Electronic Resource
    Electronic Resource
    The kinetics of charges in dry bacteriorhodopsin Langmuir-Blodgett films - an analysis and comparison of electrical and optical signals (1993)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 2 (1993), S. 211-220 
    Details
    ISSN: 1057-9257
    Keywords: Optical signals ; Electrical signals ; Bacteriorhodopsin ; Langmuir-Blodgett films ; Proton kinetics ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The decay of the M intermediate and the recovery kinetics of bacteriorhodopsin (bR) were detected optically in dry and wet bR Langmuir-Blodgett (LB) films and electrically in dry films. From the electrical signals the kinetics of the proton motion was distinguished from the cell function and it was found to be equal to that determined optically for the M intermediate decay. The rate-determining step for the recovery rate of bR was found to be the M state.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860020502
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  • 14
    Electronic Resource
    Electronic Resource
    Dynamical aspects of free exciton-magnetic polaron formation in CdTe-Cd1 - xMnxTe quantum wells (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 117-125 
    Details
    ISSN: 1057-9257
    Keywords: Exciton-magnetic polaron ; Quantum well ; Dilute magnetic semiconductors ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Calculations of the energies of magnetic polarons formed by free excitons localised in non-magnetic CdTe wells next to magnetic Cd1 - xMnxTe barriers are presented. A comparison with recent time-resolved spectroscopy results allows insight to the physical aspects governing the dynamics of the formation of the polarons. It is shown that the experimentally measured energy shift is not the polaron energy itself but the difference between this and the change in the exciton binding energy. The latter is calculated within the envelope function approximation and by employing a variational technique. The polaron energy calculation uses a modified version of an approach described by Wolff.The results show that static polaron calculations are not generally reliable and that the exciton-magnetic polaron has to be viewed as a dynamically evolving complex. It is initially energetically favourable for the exciton-magnetic polaron complex to increase its spatial localisation, since the gains in polarisation energy exceed the loss in exciton binding energy. However, thermodynamic considerations suggest that in general saturation of the magnetic ions will not occur.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860030117
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  • 15
    Electronic Resource
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    Spin-polarised tunnelling current in metal-insulator-gapless semiconductor structures in a magnetic field (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 127-130 
    Details
    ISSN: 1057-9257
    Keywords: Tunneling ; Gapless semiconductor ; Magnetic field ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Experimental investigations of tunnelling conductivity oscillations of metal-insulator-gapless semiconductor structures are performed. For the orientation of the magnetic field H | n (n is normal to the structure plane) a splitting of the oscillation maxima of the tunnelling conductivity due to the spin splitting of the Landau levels is observed. It is revealed that when the magnetic field turns away from this direction the amplitudes of the low-bias maxima decrease monotonously, and at H ⊥ n oscillations corresponding to tunnelling into one spin state only are observed. A theoretical analysis shows that this is caused by an unusual behaviour of the electron wavefunctions near the surface of gapless semiconductors in an applied magnetic field.
    Additional Material: 3 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860030118
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  • 16
    Electronic Resource
    Electronic Resource
    Homogeneious linewidth and relaxation of excited hole states in II-VI quantum dots (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 141-150 
    Details
    ISSN: 1057-9257
    Keywords: Semiconductor-doped glasses ; Non-linear optical materials ; Differential absorption spectroscopy ; Scattering processes ; II-VI compounds ; Quantum dots ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: By use of differential absorption spectroscopy at different temperatures we investigate the homogeneous line broadening of small CdSxSe1 - x quantum dots embedded in glass. Our experiments show the strong correlation between the precipitation stages and characteristics optical parameters such as the saturation intensity and the longitudinal and transverse relaxation times. In samples grown in the diffusion-controlled regime to avoid coalescence, we find after strong laser excitation for the first time spectrally narrow holes in the non-linear differential absorption spectra. These sharp non-linear resonances with a halfwidth Γ of only 10 meV at T = 20 K allow us to investigate the energetic distance of the lowest hole levels and the temperature dependence of the line broadening. The different contributions of LO phonon coupling and temperature-independent scattering to the homogeneous linewidth will be analysed. The relaxation from the excited hole states has been investigated by exciting in the higher-energy hole states and measuring the resulting change in the ground state absorption.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860030121
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  • 17
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    High-resolution scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) of ZnSxSe1 - x/ZnSe Quantum Wells (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 183-190 
    Details
    ISSN: 1057-9257
    Keywords: Scanning transmission electron microscopy (STEM) ; High-resolution ; Z-contrast ; ADF ; HAADF ; Electron energy loss spectroscopy (EELS) ; ZnSxSe1 - x/ZnSe quantum wells ; MOVPE ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Epitaxial growth techniques for ZnSxSe1 - x/ZnSe heterostructures have already achieved a high degree of development. Further improvements strongly require characterisation techniques with high compositional sensitivity and high spatial resolution. Therefore in this work high-resolution Z-contrast, which provides compositional information down to the atomic scale, has been used for the first time to characterise ZnSxSe1 - x/ZnSe quantum well structures. The influence of structural defects on Z-contrast is demonstrated by comparison of scanning transmission electron microscopy (STEM) bright field images and STEM Z-contrast micrographs of planar defects and dislocations. The compositional abruptness of ZnSxSe1 - x/ZnSe interfaces in MOVPE-grown quantum well (QW) structures is judged from high-resolution Z-contrast micrographs. Electron energy loss spectroscopy (EELS) measurements were performed for the first time in ZnSxSe1 - x/ZnSe QW structures in order to obtain quantitative compositional information with nanometre spatial resolution. From EELS line scans, which monitor the selenium concentration across ZnSe QWs, the obtainable spatial resolution is estimated to be about 1-2 nm. The problems that have prevented quantitative analysis of the selenium concentration up to now are discussed.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860030126
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  • 18
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    Plasma-enhanced MOVPE and nitrogen doping of ZnSe (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 203-208 
    Details
    ISSN: 1057-9257
    Keywords: ZnSe ; Diallylselende ; Plasma ; MOVPE ; Nitrogen doping ; Raman spectroscopy ; Photoluminescence ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: In order to obtain high quality Znse epilayers on GaAs which can be intentionally P- and n-type doped growth at a reduced temperature is highly desirable. Therefore in this work the suitability of diallylselenide and the influrnce of plasma precracking have ben investigated. Photoluminesscence, Raman spectroscopy, scanning electron microscopy, X-ray, SIMS and Hall measurements were used to anaylse the samples. The selenium precursor was fully decomposed at temperatures above 360°C if it was precracked by a plasma. Bound excitions could be resolved with negligible donor-acceptor pair (DAP) and copper green emission in the PL spectra form films which were grown with a plasma at temperatures beyond 530°C. Clearly the hpe for reduction in the deposition temperature was not achieved. Raman spectra also revealed strong crystalline quality variations. For the doping experiments nitrogen was used as the carrier gasa instead of hydrogen. Plasma cracking of the selenium precursor was still necessary. Thye substitution of the H2 carrier gas by nitrogen reduced the growth rate by a factor of 2.6 but enhanced the crystalline properties of the samples as shown by the Raman measurements. Strong DAP emission at 2.7eV in the (PL) spectra was observed. SIMS measurements showed a nitrogend concertration of about 3 × 1017 cm-3. An additional nirtogen plasama (0-7W) had a begligible effect on the nitrogen concentration in the sample. The samples were semi-insulating, whichmight be a conswquence of the crystalline quality of ZnSe grown with DASe as selenium precursor.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860030129
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  • 19
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    GaAs substrates for the MOVPE growth of (Hg,Cd)Te layers (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 239-245 
    Details
    ISSN: 1057-9257
    Keywords: Substrates ; MOVPE ; MCT ; Surface morphology ; Structural properties ; Photoconductors ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: After a review of the structural properties of (Hg,Cd)Te layers grown by MOVPE on GaAs substrates, topical questions such as out-diffusion of Ga and As from the substrate into the layers, monolithic integration of signal procesing into the substrate and the presence of pyramidal defects in (100) layers will be discussed. In order to solve the last problem, a systematic study of the influence of the (h11) GaAs substrate orientation and polarity on the structrual properties and surface morphology of CdTe layers grown by MOVPE has ben carried out. Twin-free layers are obtained on (211)A, (311)B and (511)B GaAs surface orientations as ezplained by a model taking into accountthe type of dangling bonds at the interface. The performance of photoconductors fabricated on(Hg,Cd)Te layers of various orientations confirms these results. Particularly good results have been obtained for the (311)B orientation.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860030134
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  • 20
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    Photoluminescence spectroscopy as a tool to assess extrinsic impurities and quality of ZnSe and ZnSxSeI - x grown by MOVPE (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 261-267 
    Details
    ISSN: 1057-9257
    Keywords: ZnSe ; ZnSxSe1 - x ; MOVPE ; Photoluminescence ; Mapping ; Purified ; DESe source ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: In this paper we report new results concerning the cause of impurities responsible for the Ix, and I2-peaks in photoluminescence (PL) spectra of ZnSe grown by MOVPE. An improvement in ZnSe epilayer quality is obtained by using a metal organic selenium precursor with reduced chlorine concentration. The PL spectrum of such a layer shows typical excitonic transitions, but compared with samples grown with a more contaminated source, the intensity of the Ix, and the I2 peaks decreases relative to the free exciton transition. A Gaussian fitting of the donor-bound exciton peaks taking the background of other structures into account shows that the ratio between the Ix and I2 peaks does not differ significantly between two samples. Both the decrease in donor-bound exciton transitions and the unchangeability of the ratio Ix/I2lead to the conclusion that only chlorine impurities are responsible for Ixand Ix. In order to verify the homogeneity of impurity uptake across a 2 inch wafer, we performed PL mapping of ZnSxSe1 - x layers. Mapping of a 2 inch ZnSe wafer shows that the FWHM of Ix across a wafer does not vary significantly (1.55 ± 0.21 meV). On mapping a 2 inch ZnS0.3Se0.7 wafer fabricated with H2S as the sulphur source at TD = 480°C, we found a rotational symmetric dstribution of sulphur in the layer. The sulphur content x at the centre is nearly constant. The difference in x between the centre and the boundary of a bad surface region at the edge of the wafer is less than Δx = 0.045. The FWHM of the band edge luminescence follows the same tendency across the wafer. The dependence of homogeneity on the reactor design as well as the uptake of unintentional impurities from the precursor is discussed in detail.
    Additional Material: 6 Ill.
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    URL: http://dx.doi.org/10.1002/amo.860030137
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  • 21
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    Phosphorescent spectral and decay studies of CaI - xSrxS:Ce solid solutions (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 283-288 
    Details
    ISSN: 1057-9257
    Keywords: Phosphors ; Alkaline ; Earth sulphides ; Photoluminescence ; CaS ; SrS ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Ca1 - xSrxS Solid Solutions at 10 m/o intervals have been prepared by coprecipitation of sulphates from aqueous solution followed by reduction at 1000°C with hydrogen. Phosphorescence emission spectra have been determined for these solid solutions doped with 0.1 m/o cerium and show a blue shift with increasing strontium content from 2.46 to 2.59 eV. Hyperbolic phosphorescent decay curves were observed at both room and liquid nitrogen temperatures across the composition range and have been broken down into three exponential components by graphical and computer-programme-based methods. At room temperature trap depth values of 0.366, 0.316 and 0.282 eV with measured lifetimes of 1.9, 0.26 and 0.07 ms respectively were determined with little dependence on composition. At liquid nitrogen temperature shallower traps were observed at 0.103, 0.086 and 0.076 eV with respective decay times of 5, 0.4 and 0.09 ms having little sensitivity to changes in the host compostion. These traps are related to intrinsic defects, some of which may be surface in character. The blue shift in emission peak energy with the decrease in band gap from CaS to SrS is discussed.
    Additional Material: 3 Ill.
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    URL: http://dx.doi.org/10.1002/amo.860030140
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    Masthead (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994) 
    Details
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040101
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    Encapsulated alkaline earth metallocenes. 3: Structural influences on phase transformations alkaline earth complexes (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 1-8 
    Details
    ISSN: 1057-9257
    Keywords: Alkaline earth ; Calcium ; Ligand flexibility ; Magnesium ; Melting point ; Metallocene ; Phase transformation ; Volatility ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Reaction of two equivalents of KCp3i (Cp3i ≡ 1,2,4-(i-Pr)3C5H2) with MgBr2 in Et2O produces the base-free metallocene (Cp3i)2Mg in high yield; the similarly prepared organocalcium complex (Cp3i)2Ca, although initally isolated as an oil, forms a crystalline solid on standing for several months. Crystals of (Cp3i)2 CA are tetragonal, space group P42/n, with a = 18.147(4), c = 15.996(4) Å, Å and Dcalc = 1.066 g cm-3 for Z = 8. Lease-squares refinement based on 2044 reflections led to a final R-value of 0.072. The complex possesses a metallocene geometry that is slightly bent; the average Ca-C distance is 2.62(2) Å and the right centroid-Ca-ring centroid angle is 169.7°. Comparison of these complexes with previously reported alkaline earth metallocenes suggests that the volatility of the metallocenses depends primarily on the degree of aggregation in the solid state, whereas the melting point of the nonomeric compounds varies with the asymmetry and ligan flexibility in the complex.
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    Langmuir-Blodgett films of indandione-l,3 pyridinium betaine. II: Molecular structure and properties of monolayers; simulation and optical absorption data (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 27-41 
    Details
    ISSN: 1057-9257
    Keywords: Amphiphilic indandione-1,3 pyridinium betaine derivatives ; Langmuir-Blodgett monolayers ; Monolayer spectral characteristics ; Simulation of molecular structure ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The molecular structure and optical properties of a monolayer at the air/water interface of novel amphiphilic derivatives of indandione-1,3 pyridinium betaine (IPB) with different lengths of the aliphatic tail, namely C1lIPB and C17IPB, have been studied using optical absorption techniques and computer simulation approaches.The compression π-A isotherm of the C17IPB monolayer and computer simulation of its molecular structure show that there may exist two energetically stable molecular configurations, one with antiparallel orientation of the dipole moments of the C17IP ‘heads’ in the low-pressure region at π = 5-32 mN m-1 and the second (after a distinct phase transition at π = 33 mN m-1) with parallel orientation of the dipoles, with different tilt angles and areas per molecule. For C11IPB only the first structural phase is observable.The compression-induced changes in spectral characteristics of the two structural phases go in diametrically opposite directions. In the low-pressure phase compression induces a red shift and an increase in intensity of the S1 absorption band, while in the high pressure phase a blue shift and a decrease in the intensity of this band are observed. These spectral changes correlate reproducibly with the compression π-A isotherms. Measurements of absorption dichroism confirm the change in the tilt angle at the phase transition pressure. The compression-induced spectral changes have been substantiated by the results of quantum chemical calculations.
    Additional Material: 16 Ill.
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    Novolac-based resists (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 75-82 
    Details
    ISSN: 1057-9257
    Keywords: Novolac resins ; Positive-working resists ; DNQs ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The performance of novolac-diazonaphthoquinone-based positive-working resists is discussed in terms of the molecular weight distributions and microstructures of the novolac resins and the structural variations in the photoactive dissolution inhibitor. Modelling studies leading to recent improvements allosing the delineation of 0.35 μm line and space pattens by ensuring a focal depth of 105 μm are outlined. Consideration is also given to the new problems such as pivotal shift and halation that arise in the application of high-resolution photolithography using novolac-diazonaphthoquinone resists.
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    Announcement (1993)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 2 (1993), S. 156-156 
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    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860020313
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    Diary of conferences and symposia (1993)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 2 (1993), S. 207-209 
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    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860020410
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    A photolithographic technique for patterning spin-coated polyaniline films (1993)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 2 (1993), S. 233-236 
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    ISSN: 1057-9257
    Keywords: Polyaniline ; Device processing ; Photolithography ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Solvent-cast polyaniline films have been deposited by spin coating and photolithographic techniques used to pattern the films to a resolution of 15-20 μm. This approach is then used successfully to deposit the polymer on the gate areas of an array of silicon field effect transistors.
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    URL: http://dx.doi.org/10.1002/amo.860020504
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    Molecular image-processing devices based on chemical reaction systems. I: General principles for implementation (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 179-190 
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    ISSN: 1057-9257
    Keywords: Molecular computing ; Molecular neurocomputer ; Molecular image-processing devices ; Computational complexity ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Potentialities for implementing simple neural information-processing devices based on chemical and biochemical dynamical media are discussed. Pilot ‘hardware’ models of neural molecualr devices that able to perform image-processing operations were constructed.
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    URL: http://dx.doi.org/10.1002/amo.860040302
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    Artifice and artefacts, 100 essays in materials science. Robert W. Cahn. Institute of Physics Publishing, Bristol, ISBN 0 7503 0152 X xiii + 365 pp. £19.95 or $39.90 (paperback) (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 233-233 
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    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040307
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    Electrical characteristics of polypyrrole composites at microwave frequencies (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 253-263 
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    ISSN: 1057-9257
    Keywords: Polypyrrole ; Conducting polymer composites ; Electrical modelling ; Microwaves ; Radar-absorbing material ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The microwave absorption and reflection characteristics of composites of polypyrrole with paper, cotton cloth and polyester fabrics have been evaluated. Refiectivity measurements in the range 2-18 GHz and plane wave modelling have revealed impedance charateristics with a common transition rgion. Relationships between substrate material, polymer loading and electrical performacne have been explored. Polarisation characteristics have alos been measured. The electrical model has been successful in predicting the performance of both Salisbury screen and Jaumann multilayer designs of radar-absorbing material.
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    Modification of the dark and photoconductivity and the optical transmittance of solution-grown CdS thin films (1993)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 2 (1993), S. 133-141 
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    ISSN: 1057-9257
    Keywords: CdS ; Chemical deposition ; Photodetector ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Very interesting behaviour is shown by chemically deposited CdS thin films for optoelectronic applications after air and vacuum (10-5 Torr) annealing. Vacuum annealing of samples at about 100°C caused the dark conductivity to improve by five orders of magnitude. The dark and photoconductivity of air-annealed (at around 200°C) samples increased by seven and two orders of magnitude respectively. Air-annealed (at 350°C for about 2 min) samples exhibited a very quick photoresponse (〈2 s for two decades of photocurrent decay) with σp/σd ≈ 105 for a bias of 10 V, which may be exploited for photodetector applications. Air or vacuum annealing of samples for a minimum of 10-15 min caused the optical transmittance above the band edge to increase by 10%-15% and annealing the sample at 200°C caused the absorption edge to shift towards the longer-wavelength region compared with the as-prepared and 100 and 350°C annealed films.
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    D. R. Uhlmann and D. R. Ulrich (Eds.). Ultrastructure processing of advanced materials, John Wiley & Sons Ltd, Chichester 1992, ISBN 0 471 529869 £71.00 hb (1993)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 2 (1993), S. 151-151 
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    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860020311
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    Masthead (1993)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 2 (1993) 
    Details
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860020401
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    On the electro-optic properties of single crystals of sodium, potassium and rubidium acid phthalates (1993)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 2 (1993), S. 157-163 
    Details
    ISSN: 1057-9257
    Keywords: Electro-optic modulator ; Pockels effect ; Dispersion of electro-optic coefficients ; Molecular ionic crystal ; Non-linear optical material ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The linear electro-optic (Pockels) effect in a series of alkali metal acid phthalate crystals has been studied. Single electro-optic coefficients r113T and r333T for sodium (NaAP), potassium (KAP) and rubidium (RbAP) acid phthalates have been measured by employing the modified Mach-Zehnder interferometric technique. The best electro-optic crystal in this series is RbAP with r113T = 9.10 × 10-12 m V-1, r333T = 3.05 × 10-12 m V-1 and a sizable figure of merit for electro-optic phase retardation, comparable with that of KDP. The dispersion properties of the electro-optic coefficients for KAP are discussed in detail.
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    Neural network fitting and prediction of polarisability tensors for aromatic hydrocarbons (1993)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 2 (1993), S. 175-181 
    Details
    ISSN: 1057-9257
    Keywords: Neural network ; Polarisability ; Aromatic hydrocarbon ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: A standard back-propagation neural network is used to correct input semi-empirical molecular orbital calculations of polarisability tensors to fit experimental data for aromatic hydrocarbons. The method readily yields the correct component normal to the molecular plane but is restricted by a small training set. The network is also used to predict polarisability components for structures input as the pattern of rings fused to a central benzene ring. Semi-quantitative predictions are obtained depending on the size and method of presentation of the training set.
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    Photoluminescence and efficiency of Ce3+ in SrS powders (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 131-136 
    Details
    ISSN: 1057-9257
    Keywords: II-VI compound ; SrS : Ce ; Photoluminescence ; Concentration quenching ; Phosphorescence ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The luminescence efficiency of SrS: Ce powders in the doping range from 0.01 to 1.0 at.% was investigated by photoluminescence decay studies. The radiative decay time of Ce3+ in SrS was determined to be 27 ns. The onset of concentration quenching at concentrations higher than about 0.7 at.% has been obtained. The photoluminescence spectrum of Ce3+ exhibits two emission bands as a consequence of the ground state splitting. The Huang-Rhys factor of the 5d-4f transition was estimated to be about 6. The inhomogeneous broadening of the emission band of samples with higher doping level has been investigated by site-selective and time-resolved spectroscopy.
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    URL: http://dx.doi.org/10.1002/amo.860030119
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    Identification of the volatile decomposition products produced in the deposition of (Hg,Cd)Te by MOVPE (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 151-161 
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    ISSN: 1057-9257
    Keywords: MOVPE ; (Hg, Cd)Te ; Decomposition products ; GC-MS ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The pyrolysis reactions of di-isopropyl telluride and dimethyl cadmium, both alone and in combination and with and without mercury, have been studied using the technique of gas chromatography-mass spectrometry (GC-MS). For example, when mercury and dimethyl cadmium are mixed in hydrogen at the growth temperature (370°C), the volatile products observed are methane, ethane and dimethyl mercury. In contrast, when di-isopropyl tellurideis substituted for the cadmium precursor in this reaction, the products observed are propane, propene and 2,3-dimethylbutane with no volatile mercury-containing compounds. Heating the two organometallic precursors together at the growth temperature in the absence of mercury gives products expected from the pyrolysis of each one alone plus a number of interaction products such as 2-methylpropane. The results of these studies will be presented, a mechanism for the reactions proposed and the implications for MOVPE growth discussed.
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    Radiative efficiencies and deep levels in zinc selenide (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 199-202 
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    ISSN: 1057-9257
    Keywords: Zinc selenide ; Luminescence ; Deep levels ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Although zinc selenide and related materials are promising for blue light-emitting diodes and lasers, present performance is unsatisfactory. The blue radiative efficiency at room temperature is low and the decay time of luminescence is correspondingly short. It is argued that the problem is non-radiative recombination by the Hall-Shockley-Read mechanism at deep levels and that the concentration of these levels must be high. Experimental evidence for the existence of such levels is presented. Characterisation and control of deep levels will be essential for progress in this area.
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    Masthead (1993)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 2 (1993) 
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    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860020501
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    Diary of conferences and symposia (1993)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 2 (1993), S. 269-270 
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    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860020507
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    Scanning tunnelling microscopy investigations of self-assembled monolayers of poly(3-decyl-thiophene) on graphite (1993)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 2 (1993), S. 295-299 
    Details
    ISSN: 1057-9257
    Keywords: Scanning tunnelling microscopy ; Self-assembly ; Monolayer ; Poly(alkyl-thiophene) ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The self-assembly technique experimented for the deposition of alkanes and alkyl derivatives on layered compounds at the liquid/solid interface has been successfully extended to the adsorption of poly(3-decyl-thiophene) on graphite. The molecular films so obtained have been investigated using scanning tunnelling microscopy (STM). Images taken in both the constant-current and constant-height modes show highly packed arrays of molecules characterised by an average length and an average spacing that are in good agreement with results obtained by X-ray diffraction investigations. Constant-current images allow one to observe domain formations in preferential directions coincident with the main axes of the graphite lattice, while constant-height imaging, performed on small areas, allows one to resolve atomic structures within the polymer backbone. In particular, periodic, 0.71 nm spaced features have been identified along the side of the polymer backbone; they can be associated with the length of two monomer units and are attributable to imaging of sulphur atoms in the backbone.
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    Announcement (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 239-239 
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    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040310
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    Liquid crystalline hydrogen-bonded complexes formed between alkoxystibazoles and phenols (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 273-276 
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    ISSN: 1057-9257
    Keywords: Liquid crystals ; Hydrogen bonding ; Phenols Stilbazoles ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Mesomorphic materials formed by hydrogen bonding between 4-alkoxystillbazoles and some phenols are described.
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    URL: http://dx.doi.org/10.1002/amo.860040406
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    Isomorphous mixing of mesogenic anions and uncharged analogues in organised poly(ehtylene oxide)-alkali salt complexes (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 265-271 
    Details
    ISSN: 1057-9257
    Keywords: Poly(ethy1ene oxide)-salt complexes ; Anionic mesogens ; Uncharged mesogens ; Isomorphous mixture ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The preparation and characterisation of novel ionic polymer liquid crystal complexes of poly(ethylene oxide)-Na+ with mesogenic anions and their uncharged structural analogues in homogeneous mixtures are described. The systems discused most fully are the anion of the phenolic mesogen 4-n-hexyloxybenzylidene-4-hydroxy aniline (1) with its uncharged analogue 4-n-hexyloxybenzylidene aniline (1a) and the anion of 5-(4-n-octyloxy-2,3-dicyanophenyleneoxycarbonyl)benzimidazo-le (2) and its uncharged analogue 4-octyloxy-2,3-dicyanophenyloxybenzoyl (2). Differential scanning calorimetry, wide angle x-ray diffraction and polarised light microscopy show that PEO-Na1/1a and PEO-Na2/2a are homogeneous mesogenic phases when Na1 or Na2 are present at 50% or less of the stoichiometric composition in complexes (EO : salt = 3 : 1) and the shortfall is made up from 1a or 2a uncharged analogues of 1a and related systems substituted by methoxy rather than hydrogen do not form homogeneous mixtures.
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    Tackling problems in the growth of ZnS/Se through precursor design (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 163-169 
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    ISSN: 1057-9257
    Keywords: Zinc sulphide ; Zinc selenide ; t-butanethiol ; Precursors ; Purification ; Multilayers ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: A variety of problems in the growth of wide band gap II/VI materials by MOVPE has been addressed by the use of alternative precursors. The quality of grown layers of ZnSe has been greatly improved by adduct purification of Me2Zn. Using 4,4′-bipyridyl, the recovery of Me2Zn is variable because of the insolubility of 4,4′-bipyridyl in diethylether. Higher yields can be obtained using the ether-soluble base 1,3-bis(4-pyridyl)propane.tBuSH has been introduced for the growth of ZnS. Being a liquid, this compound is easy to handle and it allows growth of high-quality ZnS at temperatures down to 325°C with very little gas phase pre-reaction with Me2Zn. Growth of ZnSxSe1 - x at atmospheric pressure using H2S and Et2Se as the group 16 precursors allows excellent stoichiometric control, since the ratio of S : Se in the grown solid is similar to that of H2S : Et2Se in the gas phase for all compositions. Finally, multilayer structures have been grown at low pressure with excellent interface abruptness and goodquality material. However, the ternary layers are all much higher in sulphur than expected from the gas phase composition and the composition of the ternary appears to be influenced by the nature of the surface on which it is growing.
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    Two-Wavelength switching of luciferase activity using caged compounds (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 349-354 
    Details
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Firefly luciferase, luciferin, 1-(3,4-dimethoxy-6-nitrophenyl) elthyl ATP and 1-(2-nitrophenyl) ethyl acetic acid were immobilised in an agarose gel matrix. By illuminating the gel with 350 nm light through a mask, a positive bioluminescent pattern was written on to the gel by releasing ATP in the illuminated areas. The gel was then illuminated with a brpadbnand UV light through a second mask to release acetic acid, lowering the local pH and deactivating the enzyme. This produced a negative image of the second mask superimposed on the positive image of the first mask.The system represents a two-wavelength switch in which one wavelength of light activates the enzyme while a second deactivates it. This demonstrates the feasibility of using biological molecules as logic element in future devices.
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    Dynamic displacement anisotropy of atoms, streamer discharges and phonon focusing in BeO and CdSe crystals and I-VII compoundsPresented at European II-VII Workshop, Aachen, 1993. (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 355-363 
    Details
    ISSN: 1057-9257
    Keywords: Anisotropy ; Dynamics of atomic displacements incomplete electric breakdown ; Phonon focusing ; Streamer discharges ; Alkali halide crystals II-VI compounds ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Streamer discharges at 77 K and crytallographically oriented surface spark breakdown at 295 K have been obtained in BeO crystals. An inverted temperature dependence has been found for the breakdown anisotropy compared with that in CdSe crystals. It is shown that the temperature dependences of the excitation thresholds of the incomplete electric breakdown at different crystallographic orientations in dielectrics as well as those of the streamer discharges in hexagonal semiconductors are controlled by the anisotroply of ionic dynamic displacements. The directions of maximum phonon focusing have been calculated in the localoisation planes of the incomplete breakdown in NaCl, KBr and LiF crystals at room temperature in accordance with well-known breakdown model along phonon streams. It is shown that the alkali halide breakdown data do not agree with this model. An anisotropy is predicted of the dynamic displacement of atoms in alkali halide crystals as well as in the basis plane and mirrorsymmetric directions of planes containing the crystallographic c-axis in hexagonal II-VI compounds, which allows us to explain the observable particularities of the discharge anisotropy in both cubic and hexagonal crystals.
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    Growth of yttrium oxide thin films from β-diketonate precursor (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 389-400 
    Details
    ISSN: 1057-9257
    Keywords: Yttrium oxide ; Atomic layer epitaxy ; β-Diketonate precursor ; Silicon substrate ; Sapphire ; Soda-lime glass ; Corning glass ; Buffer layer ; Atomic force microscopy ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Yttrium oxide thin films were deposited in a flow-type ALE reactor from Y(thd)3 (Hthd ≡ 2,2,6,6-tetramethyl-3,5-heptanedione) and either ozone or oxygen. The influence of the substrate and source temperatures, pressure and pulse durations on the film growth on soda-lime and silicon substrates was studied. Films were also grown on Corning glass, sapphire and Si/CeO2 substrates to study the effect of the substrate on the growth rate and crystallinity of the films. Spectrophotometry, XRD and AFM were used to determine the optical properties, thickness, crystallinity and surface morphology of the films. All the films deposited with ozone were crystalline, but differences in preferential orientation depending on the substrate were observed. The growth rate with ozone was about 0.8 Å cycle-1 on all substrates except sapphire where it was higher. The films deposited with oxygen were less crystalline and the growth rate was significantly lower than in depositions with ozone under the same growth conditions.
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    Guided Wave Optics. A. R. Mickelson. Thomson International, London, 1993, ISBN 0 442 00715 9, 254 pp. £49.50 (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 433-433 
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    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040609
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    Preparation and electroluminescence of CaS: (Ce, Eu and Cu) phosphors (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 301-306 
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    ISSN: 1057-9257
    Keywords: Calcium sulphide ; Photoluminescence ; Electroluminescence ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Doped CaS powder samples were prepared using two methods: (i) a metathesis reaction of carbonate with H2S at 1200°C; (ii) reaction with Na2Co3/S flux at 1000°C in nitrogen, followed by washing in an alkaline solution, drying and sieving to give 20-30 μm particles.Powders produced from both reactions were strongly photoluminescent and singificant AC electroluminescence (ACEL) was observed when samples produced by the metathesis reactions were copper coated. Samples prepared using the flux technique on pre-copperdoped carbonate also showed ACEL.The EL excitation process in the flux grown material differs from that in samples prepared using H2S; this stems from Cu2S microdeposits on the particle surfaces of the former. The formation of the needle-like deposit results from precipitation of copper from solid solution with decreasing temperature. The EL emission arises from observable point sources rather than the more uniform emission from copper-coated samples.
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    Semiconductor lasers, G. P. Agrawal and N. K. Dutta. 2nd edn. Van Nostrand Reinhold, New York, 1993. ISBN 0 442 01102 4, £66.00. No. of pages 616 (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 51-51 
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    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
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    URL: http://dx.doi.org/10.1002/amo.860040107
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    Masthead (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994) 
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    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040201
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    Polymeric silicon-containing resist materials (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 95-127 
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    ISSN: 1057-9257
    Keywords: Resists ; Silicon-containing ; Single layer ; Multilayer ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Silicon-containing bilayer and trilayer photoresist technology is reviewed. Multilayer resist processes of this type rely on pattern generation in a thin imaging layer followed by pattern transfer to the thick planarising underlayer by oxygen reactive ion etching (RIE). The review concentrates on materials in which the silicon is an integral part of the polymer and does not specifically address photoresists where silicon is incorporated in a post-imaging process step (Such as top-surface-imaging resists). The review is not exhaustive but emphasizes instead specific examples of representative resist chemistry.
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    Photoswitch based on bacteriorhodopsin Langmuir-Blodgett films (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 219-224 
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    ISSN: 1057-9257
    Keywords: Bacteriorhodopsin ; Langmuir-Blodgett films ; Differential response ; Photoswitch ; Photoalarm ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Langmuir-Blodgett (LB) films of bacteriorhodopsin (bR) without addition of lipids were deposited on indium tin oxide (ITO) conductive electrodes. A sandwich photocell with a juction structure of ITO/bR/electrolyte/ITO has been constructed in which the bR LB film was put into contact directly with an aqueous electrolyte immobilized in an agar gel. Under visible light irradiation a transient photocurrent due to a change in light intensity can be observedl showing the property of vision-imitative material. It can be used as a multiple optical switch, since it gives positive and negative transient photocurrnts during application and removal of light irradiation respectively and has a photoresponse repeatedly in the same direction when the light intensity increases or decreases stepwise. A photoalarm consisting of the bR photocell and an amplifier was set up by utilizing the switching function of the bR LB film.
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    Nearly resonant third-order optical non-linearity in c60 cast films (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 413-416 
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    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: We have carried out measurements of the third-order optical non-linearityX(3) of C60 cast films using the z-scan technique. The measurements have shown that two-photon absorption is the dominant non-linear process around the 3.76 eV absorption region. The real and imaginary parts of X(3) of C60 films have been measured at 665 nm are found to be 2.8 × 10-8 and -3.2 × 10-8 esu respectively.
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    Masthead (1993)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 2 (1993) 
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    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860020301
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    A study of the effect of in situ doping on the crystallinity of LPCVD polysilicon (1993)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 2 (1993), S. 123-132 
    Details
    ISSN: 1057-9257
    Keywords: Polysilicon ; Crystallinity ; Boron-doped ; LPCVD ; In situ doping ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Results are presented for the degree of crystallinity, determined by Raman spectroscopy, of in situ B-doped LPCVD polysilicon as a function of deposition temperature. The results are compared with those reported in the literature for P-doped polysilicon and it is found that for B doping full crystallinity of the layer is achieved at a significantly lower deposition temperature than is required for P doping. An attempt to understand this effect is made in terms of a quantitative model which allows an estimation of values for silicon self-diffusivity and which is in accord with the experimental observations.
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    A modified plasma source for controlled layer thickness synthesis in laser pulse vapour deposition (LPVD) (1993)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 2 (1993), S. 19-29 
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    ISSN: 1057-9257
    Keywords: Thin films ; Laser ablation ; X-ray mirrors ; Plasma sources ; UHV deposition equipment ; Ni/C multilayer structures ; SNMS depth profiling ; TEM cross-section ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The conventional thin film deposition equipment of LPVD has been modified for the preparation of nanometre-layer stacks of uniform thickness at reduced target/substrate separation. Therefore the planar target was replaced by a cylindrical one and the target motion regime has been modified.During thin film deposition a substrate translation is preferred instead of the usual rotation technique. With this arrangement the emission characteristic of the plasma source can be computer controlled and tailored via a stepper-motor-driven manipulator for the desired layer thickness profile across an extended substrate. Thus, for example, a homogeneous film thickness is obtained even for lower target/substrate distances, and an appropriate deposition rate can be maintained.First applications of the equipment are explained and compared with typical results of the conventional technique.
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    Damage of STM tips during nanofabrication (1993)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 2 (1993), S. 71-77 
    Details
    ISSN: 1057-9257
    Keywords: Scanning tunnelling microscope (STM) ; Tip ; HOPG ; Nanofabrication ; In situ processing ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The STM tip shape was found to change when nanofabrication using a scanning tunnelling microscope (STM) was attempted by applying voltage pulses between the tip and the sample. This change, which is considered to be caused by the voltage pulses, was studied systematically to investigate the thermal contribution to nanofabrication using STM tips. The tips become easily damaged as the pulse amplitude and pulse width increase or the tunnelling gap decreases. Thermal reaction, including thermochemical reaction, is considered to play an important role in such nanofabrication.
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    Masthead (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994) 
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    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860030101
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    Controlling the interface between II-VI and III-V semiconductors (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 3-9 
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    ISSN: 1057-9257
    Keywords: Heteroepitaxy ; Raman spectroscopy ; In situ characterisation ; II-VI/III-V ; CdTe ; CdS ; III2VI3 ; Interface ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: This paper describes ways in which the interface between II-VI and III-V semiconductors can be controlled so as to suppress or alter commonly observed interfacial reactions. This will be done using CdTe/InSb and CdS/InP heterostructures as examples. In the case of CdTe/InSb a modification of the interfacial properties is achieved by a variation in the II/VI ratio offered to the surface during growth, while the influence of Sb interlayers is studied for CdS on InP. Information on the interface properties is obtained from Raman spectroscopy. While structural and electronic properties of the II-VI layer can be deduced from the scattering intensities of its characteristic vibrational modes, the formation of interfacial compounds is observed by the appearance of scattering intensity in a different spectral range, which is consistent with the formation of III2VI3 compounds. The potential of Raman spectroscopy for on-line in situ monitoring of growth processes will be displayed.
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    A new gas alarm device and integrated-electrode-type chemical sensor (1992)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 123-126 
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    ISSN: 1057-9257
    Keywords: Gas sensor ; Alarm device ; Solid electrolyte ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: A new gas alarm is presented which is based on solid electrolytes with high ionic conductivities. The operating principle of the device is the compensation of the cell voltage and measurement of the direction of the electrical current. Also, the general microelectronic circuit designs are discussed. Several advantages are found in comparison with other types of gas sensors.
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    SnS—Sno2 conversion of chemically deposited SnS thin films (1992)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 117-121 
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    ISSN: 1057-9257
    Keywords: Tin(II) sulphide ; Tin(IV) oxide ; Photoconductor ; Air annealing ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The thermal decomposition of chemically deposited SnS thin films to SnO2 films by air annealing at temperatures up to 400°C is discussed. The conversion of a 0.7 μm thick SnS thin film to an SnO2 film involves the creation of non-stoichiometric SnS, SnS + SnS2 mixed phase and non-stoichiometric SnO2 (i.e. SnO2 — x), as concluded from X-ray diffraction patterns, optical transmission spectra and electrical characteristics. The SnO2 thin films obtained in this manner are photoconductive, with a lowest sheet resistance (in the dark) of about 105 Ω/□ and an activation energy (Ea) of 0.1 eV for the electrical conductivity observed for the SnS films annealed at 325°C. This was found as the onset temperature for conversion of the SnS + SnS2 phase to the non-stoichiometric SnO2 - x film. Elevation of the annealing temperature to 400°C results in an elevation of the sheet resistance to about 109 Ω/□ with the value of Ea at 1.3 eV, indicating an improvement in the degree of stoichiometry.
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    Three-Centre electron transfer as a frame for molecular switch phenomena (1992)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 147-158 
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    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Molecular three-centre electron transfer (ET) systems contain an intermediate electronic bridge group state in addition to the donor and acceptor states. This feature is encountered in long-range ET patterns of metalloproteins, in bacterial photosynthetic reaction centres, in electrochemical processes at modified metal electrodes and in hypothetical or real molecular shift register and photodiode device-like systems. Overall ET is by superexchange when the intermediate group energy is high. When the energy is low enough that the state is temporarily populated, a range of vibrational features arise depending on the vibrational coupling and relaxation time of the intermediate state. In external fields these properties induce characteristic ‘switch’ effects reflected in rapid changes in the current derivatives and other features in the current-voltage relations. We provide a quantum mechanical frame for three-centre ET in such molecular systems. The theory rests on second-order perturbation theory. In contrast to most applications of superexchange concepts, the theory includes explicitly nuclear coupling in the intermediate state and is valid both for high energy superexchange and for low-energy populated intermediate states. Moreover, mild, finite resonances arise in the transition regions between the various energy ranges represented by analytical rate constants. The theory is appropriate to the molecular electronic behaviour of several biological and synthetic three-level ‘switch’ ET systems.
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    Delayed luminescence in a molecularly doped polymer (TAPC in polycarbonate) (1992)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 179-188 
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    ISSN: 1057-9257
    Keywords: Luminescence ; Molecularly doped polymers ; Delayed luminescence ; Geminate pair recombination ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Decay of the delayed luminescence of 1,1-bis(di-4-tolylaminophenyl)cyclohexane, both doped into a polycarbonate binder and matrix-isolated in an MTHF glass, has been studied upon excitation with the 308 nm line of an excimer laser. Time-resolved emission spectra have also been recorded. In the early time regime, 30 ns 〈 t 〈 10 μs, the decay of the emission, identified as delayed fluorescence rather than phosphorescence, follows a power-law characteristic of geminate pair recombination in a disordered medium. Singlet-singlet excitation fusion is considered to be the main pathway for geminate pair formation. Fusion of triplet excitations becomes important for e-h pair formation at long times only (10 μs 〈 t 〈 10 ms). The rate of triplet-triplet encounters carries a time dependence characteristic of the random walk of excitations in a disordered solid.
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    Nonlinear surface electromagnetic phenomena modern problems in condensed matter sciences, Vol. 29; H.-E. Ponath and G . I. Stegeman(eds.) series edited by V. M. Agranovich and A. A. Maradudin North-Holland, Amsterdam, 1991 ISBN 0 444 88359 2 xv + 654 pp (1992)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 209-209 
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    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
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    URL: http://dx.doi.org/10.1002/amo.860010408
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    Mirrorless optical bistability in molecular aggregates with dipole-dipole interaction (1992)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 235-241 
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    ISSN: 1057-9257
    Keywords: Optical bistability ; Molecular aggregates ; Dipole-dipole interaction ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The possibility of mirrorless optical bistability in molecular aggregates with dipole-dipole interaction was studied theoretically. Dimers and ordered layers of the Langmuir-Blodgett type or J-aggregates consisting of identical polyatomic fluorescent molecules were chosen as molecular aggregate models. The investigation was carried out on the basis of the Bogolubov equation chain for the density matrix of molecular aggregates and its components. It is shown that the fluorescence intensity and absorption ability are described by bistable and hysteresislike behaviour when the parameters of the molecular aggregate and pumping radiation are chosen suitably. An analysis of the bistability mechanism in such aggregates is given. Possibilities of controlling one light beam by another and switching polychromatic light flow by using a bistable device based on molecular aggregates are discussed.
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    Masthead (1992)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992) 
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    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860010601
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    Diary of conferences and symposia (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 177-178 
    Details
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040211
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    Polyalkylthiophene thin films and their characterisation with transmission spectroscopy (1993)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 2 (1993), S. 237-244 
    Details
    ISSN: 1057-9257
    Keywords: Polyalkylthiophenes ; Transmission spectroscopy ; Polymer films ; Thermochromism ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Polyalkylthiophene thin films have been prepared to enable the characterisation of the films with transmission spectroscopy and profilometry for the first time. The optical properties of the films as a function of annealing temperature are discussed. The changes in absorption with time are related to thermochromism.
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    URL: http://dx.doi.org/10.1002/amo.860020505
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    Reactions of GaX3 (x = br, i) with AS(SiMe3)3; crystal structures of I3Ga · as(SiMe3)3 and [I2GaAS(sime3)2]2 (1992)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 29-36 
    Details
    ISSN: 1057-9257
    Keywords: Gallium-arsenic compounds ; Single-source ; gallium ; arsenide ; precursors ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Reactions of GaX3 (X = Br, I) with As(SiMe3)3 in 1:1 and 2:1 mole ratios were investigated. For the latter reactant stoichiometry, substances having the empirical formulae AsBr3Ga2 (1) and Asl3Ga2 (2), the analogues of the previously reported single-source GaAs precursor (AsCl3Ga2)n, were isolated as yellow isolated as yellow insoluble powders. Low-temperature reactions in a 1:1 mole ratio resulted in the isolation of the adducts Br3Ga.As(SiMe3)3 (3) and I3Ga.As(SiMe3)3 (4). On the other hand, at room temperature the GaBr3 reaction resulted in a complex mixture from which no characterizable compounds were isolated, whereas the Gal3 reaction afforded the crystalline compound [I2GaAs(SiMe3)2]2 (5). The structures of 4 and 5 were elucidated by complete single-crystal X-ray analysis (crystal data: 4, monoclinic, space group P21/c, a = 16.497(2) Å, b = 9.629(1) Å, c = 16.658(2) Å, β = 113.21(1)°, V = 2432(1) Å3, Z = 4; 5, orthorhombic, space group Pbca, a = 14.279(2) Å, b = 17.509(2) Å, c = 13.818(2), Å, V = 3455(1) Å3, Z = 4).
    Additional Material: 2 Ill.
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    URL: http://dx.doi.org/10.1002/amo.860010106
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    Microelectrode array device: Photolithographic fabrication and electrochemical characterisation (1992)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 133-138 
    Details
    ISSN: 1057-9257
    Keywords: Microelectrode array ; Photolithography ; Electrochemistry ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: A new type of microelectrode array device has been developed using semiconductor-processing techniques. An array of 15 × 15 square electrodes as small as 1 μm, spaced 100 μm apart, has been fabricated on a silicon chip of dimensions 1.5 × 1.5 mm2. Steady state electrochemistry was performed using these devices in both aqueous and non-aqueous media.
    Additional Material: 4 Ill.
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    URL: http://dx.doi.org/10.1002/amo.860010306
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    A rheological semiconductor (1992)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 159-171 
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    ISSN: 1057-9257
    Keywords: High-speed machines ; hydraulic semiconductor ; ER fluid ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The concept of high-speed control of a mechanical process via electrical modulation of the flow of some kind of hydraulic cum semiconductor liquid is introduced. This is done in order to stimulate activity towards the provision of improved power transmission media for use in the formulation of intelligent tools and systems. A quantum leap in machine performance is the aim; flexibility of operation and motion-switching speeds 10 times higher than presently available are in demand. Some information is given on the background and application aims of the concept. Brief state-of-the-art information is presented on the front-runner of enabling solutions to this industrial equivalent of recent innovations in information technology - the electrorheological fluid.
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    URL: http://dx.doi.org/10.1002/amo.860010402
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    Development of lithographic techniques for metallisation of organic substrates (1992)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 197-201 
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    ISSN: 1057-9257
    Keywords: Lithography ; SAW device ; Methylbenzylamino-5-nitropyridine ; Gold/titanium bilayer ; Shadow masking ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: A wide range of applications which involve organic crystalline materials require the metallisation of low-molecular-weight compounds. Conventional lithographic techniques used in silicon fabrication technology use high-temperature processing methods which are unsuitable for organic materials. Gold/titanium bilayer and shadow-masking techniques were found to provide suitable solutions to the problem of metallisation of these materials and allowed fabrication of a surface acoustic wave (SAW) device with (-)-2-α-methylbenzylamino-5-nitropyridine (MBANP) as substrate.
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    The influence of bath composition on the photocurrent response and morphology of chemically deposited CdS thin films (1992)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 211-220 
    Details
    ISSN: 1057-9257
    Keywords: Photocurrent ; Morphology ; Cds ; Thin films ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The influence of the chemical bath composition on the photocurrent response, film morphology and optical transmittance of chemically deposited CdS thin films is reported. The bath parameters such as concentrations of triethanolamine, thiourea, ammonia and cadmium acetate and the bath temperature controlled the photosensitivity, photocurrent decay, morphology and optical transmittance of the films. The optimum concentration of the bath for getting good-quality photosensitive films with good optical transmittance was identified in this investigation.
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    URL: http://dx.doi.org/10.1002/amo.860010502
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    Crystallographic orientation and light emission of streamer discharges in II-VI semiconductorsEuropean II-VI Workshop, Aachen, 1993. (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 373-380 
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    ISSN: 1057-9257
    Keywords: II-VI semiconductor ; Laser ; Streamer ; Electric discharge ; Luminescence ; Generation ; Crystallographic orientation ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Some results of Investigations on the crystallographic orientation, luminescence and stimulated emission of streamer discharges in monocrystals of hexagonal CdS, CdSe and ZnO and cubic Znsand Snseare presented.
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    URL: http://dx.doi.org/10.1002/amo.860040509
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    An investigation of LPCVD and PECVD of in situ doped polycrystalline silicon for VLSI (1992)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 255-259 
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    ISSN: 1057-9257
    Keywords: LPCVD ; PECVD ; In-situ doping ; polycrystalline silicon ; VLSI ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: In general, high-temperature processes cause thermal stresses and diffusion of dopants, resulting in reduced device yields. It is thus desirable to reduce the number of high-temperature steps and the use of an in situ doping technique eliminates one such step. In this investigation, low-pressure chemical vapour deposition (LPCVD) and plasma-enhanced chemical vapour deposition (PECVD) have been utilised to deposit in situ doped polycrystalline silicon films. The process characteristics and properties such as spreading resistance, grain structure, etch rate using a plasma and dopant concentrations of these films have been investigated and explained using a simple model for dopant activation and grain growth. It is shown that good-quality films suitable for VLSI can be produced.
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    URL: http://dx.doi.org/10.1002/amo.860010508
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    Stability of electrochemically prepared polyaniline films in aqueous and organic solutions (1992)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 271-279 
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    ISSN: 1057-9257
    Keywords: Polyaniline synthesis ; Polyaniline stability ; Cyclic voltammetry ; Impedance ; Charge transfer ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Electroactive polyaniline films have been grown by galvanostatic, potentiostatic and cyclic voltammetry techniques in organic solutions based on LiClO4 or anilinium tetrafluoborate as salts and acetonitrile or acetonitrile/nitromethane mixtures as solvents. After storage of these films in a 1 M H2SO4, Na2SO4 aqueous solution, their stability was tested by cyclic voltammetry and impedance spectroscopy in this solution. Different levels of retention of the anodic charge have been found depending on the electrochemical technique and preparation solution. The impedance tests have revealed limited changes in the charge transfer resistance upon storage. This has been interpreted on the basis of a limited deactivation of the films, which in some cases would instead experience physical changes. Confirmation of this assumption was obtained via an SEM experiment.Films prepared by cyclic voltammetry in the above acidic solution and stored in acetonitrile-or propylene-carbonate-based electrolytes show major degradation processes, as evidenced by the appearance of quinone-like compounds and the marked increase in the charge transfer resistance.Finally, films prepared by different electrochemical techniques in acetonitrile-based solutions and stored in LiClO4-acetonitrile reveal moderate degradation phenomena.
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    URL: http://dx.doi.org/10.1002/amo.860010603
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    Low-Pressure chemical vapour deposition of tantalum pentoxide films for ulsi devices using tantalum pentaethoxide as precursor (1992)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 299-308 
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    ISSN: 1057-9257
    Keywords: LPCVD ; Tantalum pentoxide ; High dielectric constant ; ULSI devices ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: A laminar flow low-pressure chemical vapour deposition (LPCVD) system (LAM IntegrityTM) has been used to deposit tantalum pentoxide (Ta2O5) from Ta(OEt)5 films in the presence of oxygen (O2) at 470 °C at a typical deposition rate of 4 nm min-1. Uniformities of 〈1.5% (SD 1σ) over a 150 mm silicon substrate were obtained. The layers were annealed under different conditions. It was discovered that the films did not change their stoichiometry as determined by Rutherford backscattering (RBS). The as-deposited films were amorphous but became crystalline (β-Ta2O5) at temperatures 〉 700 °C. The transmission electron microscopy (TEM) results on crystallisation behaviour were supported by X-ray diffraction data. The electrical properties of the Ta2O5 films have been characterised using MIS (metal/insulator/silicon) capacitor structures. Leakage values of 〈10-6 A cm-2 at 6 MV cm-1 equivalent applied electric field and breakdown strengths of 〉7 MV cm-1 at 1.6 μA were obtained for annealed layers. Compound dielectric constants (native silicon oxide thickness of about 2.5 nm plus Ta2O5 of various thicknesses) between 14 and 〉30 have been measured. The electrical properties reveal the potential use of Ta2O5 as a storage capacitor dielectric in 64 and 256 Mbit DRAM (dynamic random access memory) devices.
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    URL: http://dx.doi.org/10.1002/amo.860010607
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    A comparative investigation of the oxidation of silicon using H2/O2, TCA/O2 and HCl/O2 mixtures (1993)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 2 (1993), S. 165-173 
    Details
    ISSN: 1057-9257
    Keywords: Thermal oxidation ; Kinetics ; Electrical properties ; Trichloroethane (TCA) ; Hydrogen chloride (HCl) ; Hydrogen/oxygen (H2/O2) ; VLSI ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The oxidation of single-crystal silicon wafers has been investigated using an industrial thermal oxidation system. The growth characteristics and electrical properties of the oxides resulting from pure hydrogen/oxygen (H2/O2), trichloroethane/oxygen (TCA/O2) and hydrogen chlorid/oxygen (HCl/O2) mixtures have been investigated and compared. The addition of both HCl and TCA to oxygen produces higher growth rates and improved electrical characteristics. It is shown that the oxidation rate for TCA/O2 is approximately 30%-40% higher than for HCl/O2 and that comparable electrical properties can be readily obtained. A TCA/O2 ratio of 1 mol% gives the optimum process for VLSI applications, though 3 mol% HCl/O2 gives comparable results. It is suggested that the overall mechanisms governing the processes are similar. However, the TCA process is a safer and cleaner alternative because it generates HCl in situ in the oxidation chamber.
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    URL: http://dx.doi.org/10.1002/amo.860020403
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    Laser activation and metallisation of oxide ceramics (1993)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 2 (1993), S. 183-189 
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    ISSN: 1057-9257
    Keywords: Excimer lasers ; Oxide ceramics ; Electroless deposition ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: UV excimer laser irradiation of oxides such as SrTiO3, PbTi1 - xZrxO3 (PZT) and Al2O3 results in the formation of colour centres. These colour centres mediate catalytic activity for electroless plating from Cu and Ni solutions. The adherence of the metal deposits to the as-sintered ceramic surfaces is excellent.
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    G. J. Ashwell (ed.). Molecular electronics, Research Studies Press, Taunton and John Wiley, Chichester, 1992, ISBN 0 863 801250, Price: £44.50 (1993)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 2 (1993), S. 205-206 
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    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860020409
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    Structure of 2-(iminocoumar-3-yl)-4-(coumar-3-yl)-thiazole, C2lHl4N2O3SIUPAC name: 2-(2H-1-benzopyran-2-imin-3-yl)-4-(2H-1-benzopyran-2-one-3-yl)thiazole.Supplementary data comprising full bond lengths and angles, atomic co-ordinates and anisotropic thermal parameters can be obtained from the Cambridge Crystallographic Data Centre; see Notes for Contributors for ordering information. (1993)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 2 (1993), S. 191-195 
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    ISSN: 1057-9257
    Keywords: Laser dyes ; Bifluorophoric compounds ; Thiazolyl derivatives ; Crystal structure ; Molecular conformation ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: We have determined the structure of 2-(iminocouma-3-yl)-4-(coumar-3-yl)-thiazole, C21H14N2O3S, Mr=372.4, λ = 0.71073 Å, monoclinic, space group P21/n, a = 9.472(2) Å, b = 11.284(2) Å, c = 15.821(3) Å, β = 86.50(2)°, V = 1687.9(6) Å3, Z = 4, Dx = 1.465 Mg m-3, μ(Mo Kα) = 0.207 mm-1, F(000) = 768, S = 1.91, R = 3.82%, wR = 3.26% for 1251 observed reflections (F 〉 6σF). In the observed conformation of the molecule the imino group forms an intramolecular H…S bond of length 2.26 Å and the carbonyl oxygen makes a short contact with the hydrogen atom of the thiazolyl cycle. The molecule is planar. In the crystal structure a particular disorder of about 20% of molecules is observed with respect to the pseudo-mirror plane which is perpendicular to the molecular plane and passes through the thiazolyl N atom and the middle of the S—CH bond. The disagreement found between the observed conformation and that predicted by molecular mechanics calculations is explained by the tendency of the molecule to have the lowest value of dipole moment due to minimisation of the electrostatic contribution to the energy.
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    A comparison of the diffusion of copper, gallium and cadmium in cadmium telluride (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 209-215 
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    ISSN: 1057-9257
    Keywords: Diffusion ; Cadmium telluride ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The rates of diffusion of both Ga and Cu in CdTe have been measured over the temperature ranges 350-820 and 200-400°C respectively and the results are compared with the self-diffusion of Cd (350-920°C).In the case of the Cd self-diffusion the Arrhenius graph showed two active diffusion mechanisms, one dominating above 500°C and the other below. It suggested that in the temperature range 500-800°C the main defect responsible for diffusion was Cdi-, with a significant contribution at lower temperatures from the associated defect of the form (CdiVcd)x Below 500°C another mechanism predominated which was possibly due to residual impurities.The results for the diffusions were in close agreement with those obtained by other workers. The Ga diffusions showed a complex behaviour which suggested that two mechanisms were active simultaneously, one independent of Cd partial pressure and the other decreasing with increasing Cd partial pressure.It was concluded that CdTe would be suitable as a diffusion barrier to protect HgxCd1 - xTe devices from Ga contamination from GaAs substrates but would not be efficient at reducing Cu contamination from the substrate in the device.
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    Comparison of two approaches to forced convection in crystal growth of II-VI compounds by THM (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 233-238 
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    ISSN: 1057-9257
    Keywords: Solution growth ; THM ; HgCdTe ; CdZnTe ; Forced convection ; ACRT ; Solvent inclusions ; IR microscopy ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Hg1 - xCdxTe and Cd1 - xZnxTe single crystals were grown by the tracwelling heater method (THM), applying two different techniques of artificially stirring the solution zone. Accelerated crucible rotation (ACRT) was used in a vertical growth arrangement and compared a technique with constant rotation around the horizontal axis of the ampoule. The dominant hydrodynamic mechanisms of noth methods are discribed by the rotating disc model and are suggested to be almost identical with respect to the growth conditions at the interface. Convective flow is effectively enhanced adhacent to the growing crystal, where the matter transport is regarded as the rate-limiting step of solution growth. Inclusion density analysis by IR microscopy was used to characterise the crystals of Cd1 - xZnxTe grown at different rates. It was shown that forced convection allows an increase in the crystal growth rate from a few mm day-1 with ACRT or horizontally rotating THM.
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    Analysis of photoinduced current transient spectroscopy (PICTS) data by a regularisation method: Application of compensation defects in CdTe (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 269-274 
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    ISSN: 1057-9257
    Keywords: Compensation defects ; PICTS ; CdTe ; Tikhonov regularisation ; III-posed problems ; Deep levels ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: A detailed analysis of photoinduced current transients of differntly grown CdTe:Cl samples was performed in the 100-130 K range in order to investigate the influence of the different growth techniques (sublimation, Bridgman method and travelling heater method (THM)) on the compensation defects. The transients were evaluated using a regularisation method (fast Tikhonov regularisation) as implimented in the program FTIKREG. The advantages of the regularisation method in comparison with the customary two-gate technique are demonstrated by the analysis of simulated data. It can be shown that the different growth techniques have only one level in common. Furthermore, the superposition of different traps can lead to wrong results using the conventional two-gate technigque. The temperature dependence of the relaxation times is evaluated and the corresponding trap parameters are determined.
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    A new, thermally efficient route to crystalline BaTiO3 from monodispersed rutile powder (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 9-17 
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    ISSN: 1057-9257
    Keywords: Barium ; Rutile ; Ammonia ; Barium titanate ; X-ray powder diffraction ; Scanning electron microscopy ; Thermogravimetric analysis ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Treatment of monodispersed rutile (TiO2) powder with an ammonlacial solution of elemental barium gives a uniformly coated precursor to BaTiO3. Thermolysis at about 900 °C for 6 h gives crystalline (by XRS) material with an average particle size of less than 0.1 μm (as determined by SEM).
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    Liquid crystal flat panel displays. W. C. O'Mara. Van Nostrand Reinhold (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 51-52 
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    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040108
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    Guest editorial (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 53-53 
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    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040202
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    Silylation and dry procession (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 129-138 
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    ISSN: 1057-9257
    Keywords: Silylation ; Dry development ; Photoresist ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The issues of dry development and self-developing resists are addressed in this paper by way of an introduction to the main topic of surface imaging, in which diffusion-enhanced vapour plhase silylation chemistries and their mechanisms are developed with specific reference to resists that function through the DESIRE process. More recent liquid phase silylation processes are also considered.
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    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040207
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  • 92
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    Wet development of polymer resists: A guide to solvent selection (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 155-163 
    Details
    ISSN: 1057-9257
    Keywords: Wet development ; θ-Solvents ; Cosolvents ; Rate of dissolution ; Polymer resists ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The criteria for selecting effective solvent systems for wet development of polymer resist materials are explored. Methods of estimating the polymer-solvent interactions are described, including the use of solubility parameters and the Flory-huggins interaction parameter. Methods of achieving θ-conditions, which represent minimal solvent-precipitant mixtures, or the more novel approach of establishing cosolvent systems are described. The rate dissolution has also bee identified as a controlling parameter. Some optical and gravimetric methods for measuring dissolution rates for polymer films are outlined. Examples of the influence of these factors on the sensitivity and contrast of resists such as poly(methylmethacrylate) and poly(p-methyl styrene-stat-chloromethyl styrene) are described.
    Additional Material: 9 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040209
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  • 93
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    Electronic Resource
    Masthead (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994) 
    Details
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040301
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  • 94
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    A model of molecular electronics based on the concept of conjugated lonic-hydrogen bond systems (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 203-218 
    Details
    ISSN: 1057-9257
    Keywords: Conjugated ionic-hydrogen bond systems ; Biostructures ; Biomolecules ; Molecular electronics ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: A new model of lmolecular electronics is proposed as an alternative to the ‘soliton logic’ developed by Carter. The model is based on the principles of continuity of conjugated ionic-hydrogen bond systems (CIHBSs) in the construction of supramolecular structures and conjugation through the hydrogen bond in energy transduction. It is presumed that these principles are realized in biostructures. The Concept implies a symmetrica oligomeric organisation of supramolecular structures and an oscillatory mode of their functioning. The basic architecture and basic elements have been identified. The basic architecture is determined by periodic CIHBSs. The latter have been analysed in proteins, nucleoproteids and biomembranes. The basic elements contain groups capable of building in CIHBSs. Charge generators, valves and other basic elements contain groups capable of building in CIHBSs. Charge generators, valves and other basic elements have been distinguished among biomolecules. Oligomeric enzymes have been suggested as functional prototypes of molecular processors-multivibrators where CIHBSs form Feedback loops and Provide energy recuperation. Technologcal aspects of designing molecular electronic devices on CIHBS principles have been considered. The most challenging and complicated problem is the creation of supramolecular structures with properties which can be specified in advance. Synthesis of membrane two-dimensional active media capable of storing and processing information in the mode of parallel fluxes is suggested as the most promising route for the fabrication of biochips.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040304
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  • 95
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    Inorganic materials. D. W. Bruce and D. O'Hare. Wiley, Chichester, 1992, ISBN 0 471 928895 £58.00 (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 233-234 
    Details
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040308
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  • 96
    Electronic Resource
    Electronic Resource
    Diary of conferences and symposia (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 235-238 
    Details
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040309
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  • 97
    Electronic Resource
    Electronic Resource
    Guest Editorial (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 241-242 
    Details
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040402
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  • 98
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    Electronic Resource
    Langmuir-blodgett films of stilbazole complexes of iridium(I) and rhodium(I) (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 243-251 
    Details
    ISSN: 1057-9257
    Keywords: Langmuir-Blodgett film ; Stilbazole ; Metal complex Iridium ; Rhodium Pyroelectricity ; Alternate layer ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Complexes of 4-alkoxystilbazoles with iridium and rhodium form stable Langmuir layers at the air-water interface even when the alkoxy chain is relatively short (C5-C12). The surface pressure-area isotherms indicate that condensed molecular monolayers are obtained. The area per molecule of each compound in its monolayer form is typically 0.60 nm2, which agrees well with the cross-sectional area of the [Ir(CO)2CI] or [Rh(CO)2CI] head group predicated using molecular models. This suggests that the molecules are oriented with the metal moiety close to the water surface and their alkoxystilbazole ‘rod’ protruding from the plane of the water surface. Such floating monolayers have been transferred on to solid substrates such as glass, aluminium (AI2O3/AI/Glass) and silicon (SiO2/Si) at relatively high speed (10 mm min -1) to form Y-type LB assemblies. The UV-Visible absorption properties of these materials in solution and LB film form have been studied. LB films of these complexes yield bathochromically shifted spectra relative to the LB film spectrum of the uncomplexed stilbazole. Additionally, these spectra are often broader and hypsochromically shifted relative to their corresponding solution spectra as a result of the close molecular packing within the LB film and the associated dipole-dipole interactions.The electrically polar nature of the molecules described in this paper suggest that they may be suitable candidates for new pyroelectric materials. Thus the pyroelectric coefficient (the rate of change of electric polarisation with respect to temperature) has been measured for a polar multilayer LB film containing an iridium complex. A pyroelectric coefficient of 3.5 μCm-2K-1 (at 30 °C) has been measured, which is one of the highest reported valued for an LB film. Additionally, a low dielectric loss of around 0.01 has been found over the frequency range 50 Hz-1 kHz, indicating that such LB films may be usfeul materials for pyroelectric sensors.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040403
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  • 99
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    Electronic Resource
    Masthead (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994) 
    Details
    ISSN: 1057-9257
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040501
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  • 100
    Electronic Resource
    Electronic Resource
    Growth of chromium-doped alumina thin films by metal-organic chemical vapour deposition (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 337-341 
    Details
    ISSN: 1057-9257
    Keywords: Cr-doped alumina ; Metal-organic chemical vapour deposition ; Thin film ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Amorphous thin films of chromium-doped alumina were grown from Al(OiPr)3 (iPr, Isopropyl) and Cr(CO)6 on silicon and quartz substrates by chemical vapour deposition at 673 K. The films were annealed at 1223 and 1473 K to form chromium-doped γ-Al2O3 and γ-Al2O3respectively. The lattice constant a of the γ-Al2O3thin films enlarged with increasing Cr Concentration. The lattice constant a (=b) of the α-Al2O3 thin films increased while the lattice constant c decreased with increasing Cr concentration. UV-visible spectra of the annealed films showed maximum absorptions near 380, 500 and 690 nm.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860040504
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