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  • American Institute of Physics (AIP)  (93,263)
  • MDPI Publishing
  • 2010-2014  (75,995)
  • 1985-1989  (31,708)
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Publisher
Years
Year
  • 11
    Electronic Resource
    Electronic Resource
    n-type (Pb)Te doping of GaAs and AlxGa1−xSb grown by molecular-beam epitaxy (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4184-4187 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A PbTe flux has been used for n-type (Te) doping of GaAs, GaSb, and AlGaSb. The effects of surface accumulation and Te desorption were noticeable in secondary-ion mass spectroscopy profiles of GaAs layers grown at temperatures in excess of 540 °C. Te accumulation was not apparent in GaSb layers grown at temperatures up to 630 °C, but Te desorption occurred from GaSb at temperatures above 540 °C. The donor ionization energy of Te in AlxGa1−xSb is 44 meV for 0.4〈X〈0.5, i.e., significantly lower than the ionization energies of S or Se in similar material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344004
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  • 12
    Electronic Resource
    Electronic Resource
    The electrical noise of carbon fibers (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4284-4287 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The low-frequency excess electrical noise has been measured on carbon fibers with a wide range of crystalline perfection and corresponding electrical and mechanical properties. Fibers include those prepared from ex-PAN and ex-pitch polymers, and a catalytic-chemical vapor deposited filament. The extensional (Young's) moduli of these fibers varied from about 220 to 890 GPa (35–130 Msi), while the electrical resistivities varied from about 19 to 1 μΩ m. The low-frequency electrical noise of each fiber was found to be proportional to I2 and to vary as 1/f α, where f is the frequency and α is about 1.15. The most striking feature of the results was the strong dependence of the normalized noise power on the degree of crystalline perfection.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343972
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  • 13
    Electronic Resource
    Electronic Resource
    The effect of electron-hole plasmas on the density of states of silicon and GaAs (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4279-4283 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The densities of states of the conduction and valence bands of silicon and GaAs have been calculated at 300 K for the case of an electron-hole plasma, which can occur at high-injection levels in bipolar devices or in bulk material under intense optical excitation. The results show considerable narrowing of the band gap, which needs to be included in the analysis of device measurements or the interpretation of photoluminescence data. Furthermore, the band-gap narrowing that results from dopant ions is reduced by excess carriers because of the reduced free-carrier screening radius.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343971
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  • 14
    Electronic Resource
    Electronic Resource
    Hot-phonon and electron-hole scattering effects on the transient transport of photogenerated electrons in GaAs (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4288-4294 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the transient response of photogenerated carriers to an external electric field in bulk GaAs. The results of our Monte Carlo simulations indicate that the initial velocity rise times are a strong function of the carrier density. This is caused by a combination of the hot-phonon effect and the enhanced electron-hole scattering within the plasma. Contrary to some previous suggestions, the hot-phonon effect alone is insufficient to explain the initial velocity behavior seen experimentally. The steady-state velocity is limited by the electron-hole scattering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343973
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  • 15
    Electronic Resource
    Electronic Resource
    Investigations on resonant tunneling in III-V heterostructures: Comparison between experimental data and model calculations (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4312-4316 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data obtained on a set of GaAs/AlGaAs double-barrier quantum-well resonant tunneling structures are compared with model calculations of the ideal case where scattering is negligible and tunneling is coherent throughout the entire structure. The comparison points to interface roughness in the well as the most likely cause for the observed large valley currents. The currents at low biases, before resonance sets in, are also studied. Their magnitude is found to be consistent also with the sequential tunneling picture.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343977
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  • 16
    Electronic Resource
    Electronic Resource
    The effect of Bi2O3 content on the microstructure and electrical properties of ZnO varistor materials (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4317-4324 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructures of three ZnO varistor materials with different Bi2O3 contents have been evaluated by analytical electron microscopy in combination with x-ray diffractometry. The results have been correlated to microelectrode measurements, where breakdown voltages of individual ZnO junctions were measured, and also to current/voltage characteristics of bulk specimens. The volume fraction of the continuous intergranular network of Bi-rich phases, which lies along the triple junctions of the ZnO grains, increases with increasing Bi2O3 content, The conductivity of this network is strongly influenced by its internal microstructure. It was found that increased volume fractions of δ-Bi2O3 and less interpenetration between α-Bi2O and δ-Bi2O3 increases the conductivity of the network. Individual ZnO/ZnO grain boundaries exhibited breakdowns at 3.2 and 3.6 V, depending upon whether they contained segregated Bi atoms or thin Bi-rich amorphous films. The current/voltage characteristics of heterojunctions between ZnO and intergranular Bi2O3 were asymmetrical with respect to the polarity of the applied voltage. It was found that α-Bi2O3 and δ-Bi2O3 give rise to different breakdowns for electrons traveling from the Bi2O3 into an adjacent ZnO grain.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343978
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  • 17
    Electronic Resource
    Electronic Resource
    Oxygen diffusion and phase transformation in YBa2Cu3O7−x (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4325-4328 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Isothermal anneal experiments have been conducted over a wide temperature range from 300 to 900 °C for polycrystalline YBa2 Cu3 O7−x samples in air. The phase transformation and oxygen contents of the annealed samples were studied and determined by x-ray diffraction and iodine titration. Oxygen diffusion coefficients at different temperatures were determined by a novel technique based on direct observation of the oxygen diffusion fronts by polarized light microscopy. The activation energy for the diffusion of oxygen in YBa2 Cu3 O7−x was obtained by an Arrhenius plot of the diffusion coefficients at different temperatures. The tetragonal-to-orthorhombic phase transformation controlled by oxygen diffusion is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343979
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  • 18
    Electronic Resource
    Electronic Resource
    Micromagnetics below saturation (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4329-4337 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the limit of negligible exchange and anisotropy (except uniaxial), certain shapes of magnetic samples in certain subsaturating field configurations can be analyzed analytically to obtain magnetization and domain wall patterns. Here we consider two cases: (1) generalized cylindrical objects of arbitrary cross section (with several specific examples given) and (2) a general ellipsoid. We also discuss a "tipping instability'' which might occur in an ellipsoid with uniaxial anisotropy, resulting in a sudden transition from a "curling'' state to a "transverse vortex'' state.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343980
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  • 19
    Electronic Resource
    Electronic Resource
    Changes in soft magnetic properties of Fe multilayered films due to lattice mismatches between Fe and intermediate layers (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4338-4344 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe multilayered films with various intermediate layers are formed. Their magnetic properties and film structures are examined to understand the mechanism originating soft magnetic properties. The soft magnetic properties change with the lattice mismatches between Fe and intermediate layers, showing low coercive force and high relative permeability at lattice mismatches from 0.4 to 1.2%. It is thought that the lattice mismatches above 0.4% decrease Fe crystallite size and improve soft magnetic properties. Although Fe crystallite size is small at the lattice mismatches above 1.2%, the soft magnetic properties are poor. This is because the large lattice mismatch increases internal stress and magnetic anisotropy energy. This report indicates that the good soft magnetic properties are obtained when both Fe crystallite size and internal stress are small.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343981
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  • 20
    Electronic Resource
    Electronic Resource
    Read/write characteristics of a single-pole head using Fe-C/Ni-Fe multilayered film (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4345-4349 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The advantage of a film with high saturation magnetic flux density for perpendicular magnetic recording is investigated through computer simulations and read/write measurements. A single-pole head using Fe-C/Ni-Fe multilayered film with a saturation magnetic flux density of 2.0 T is fabricated. Read/write tests are performed with the Co-Cr double-layer media. It is shown that the recording ability of this head is very high and does not change with increasing Co-Cr layer coercivity. Computer simulations show that the recording ability also increases when using film with high saturation magnetic flux density for the back layer of a double-layer medium. The upper limit of saturation magnetization of the recording layer can be extended by increasing coercivity. Thus, the higher saturation magnetization medium, which offers higher output voltage and resolution, can be used by applying film with high saturation magnetic flux density for the main pole and the back layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343982
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