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  • 1
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    NASA Tech Briefs, January 2001 (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-28
    Description: The topics include: 1) A "Model" of Interactive Engineering; 2) Feature Section: Communications Technology; 3) lnReview; 4) Application Briefs; 5) Submillimeter-Wave Image Sensor; 6) Ultrasonic/Sonic Drill/Corers With Integrated Sensors; 7) Normally Closed, Piezoelectrically Actuated Microvalve; 8) Magnetostrictively Actuated Valves for Cryosurgical Probes; 9) Remote Sensing of Electric Fields in Clouds; 10) Wireless-Communication Headset Subsystem To Enhance Signaling; 11) Power Amplifier With 9 to 13 dB of Gain From 65 to 146 GHz; 12) Humidity Interlock for Protecting a Cooled Laser Crystal; 13) A Lightweight Ambulatory Physiological Monitoring System; 14) Improvements in a Lightning-Measuring Instrument; 15) Broad-Band, Noninvasive Radio-Frequency Current Probe; 16) Web-Based Technology Distributes Lean Models; 17) Software Guides Aeroelastic-Systems Design; and 18) Postprocessing Software for Micromechanics Analysis Code. A Photonics West 2001 Preview Tech Brief supplement to this January 2001 issue is also included.
    Keywords: Electronics and Electrical Engineering
    Type: (ISSN 0145-319X)
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  • 2
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    Zee electrical interconnect (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-28
    Description: An interconnect, having some length, that reliably connects two conductors separated by the length of the interconnect when the connection is made but in which one length if unstressed would change relative to the other in operation. The interconnect comprises a base element an intermediate element and a top element. Each element is rectangular and formed of a conducting material and has opposed ends. The elements are arranged in a generally Z-shape with the base element having one end adapted to be connected to one conductor. The top element has one end adapted to be connected to another conductor and the intermediate element has its ends disposed against the other end of the base and the top element. Brazes mechanically and electrically interconnect the intermediate element to the base and the top elements proximate the corresponding ends of the elements. When the respective ends of the base and the top elements are connected to the conductors, an electrical connection is formed therebetween, and when the conductors are relatively moved or the interconnect elements change length the elements accommodate the changes and the associated compression and tension forces in such a way that the interconnect does not mechanically fatigue.
    Keywords: Electronics and Electrical Engineering
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  • 3
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    Fabricating and using a micromachined magnetostatic relay or switch (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-17
    Description: A micromachined magnetostatic relay or switch includes a springing beam on which a magnetic actuation plate is formed. The springing beam also includes an electrically conductive contact. In the presence of a magnetic field, the magnetic material causes the springing beam to bend, moving the electrically conductive contact either toward or away from another contact, and thus creating either an electrical short-circuit or an electrical open-circuit. The switch is fabricated from silicon substrates and is particularly useful in forming a MEMs commutation and control circuit for a miniaturized DC motor.
    Keywords: Electronics and Electrical Engineering
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  • 4
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    Kinetic Inductance Photodetectors Based on Nonequilibrium Response in Superconducting Thin-Film Structures (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-17
    Description: While experimental studies of kinetic-inductance sensors have been limited so far by the temperature range near the superconducting transition, these detectors can be very sensitivity at temperatures well below the transition, where the number of equilibrium quasiparticles is exponentially small. In this regime, a shift of the quasiparticle chemical potential under radiation results in the change of the kinetic inductance, which can be measured by a sensitive SQUID readout. We modeled the kinetic inductance response of detectors made from disordered superconducting Nb, NbC, and MoRe films. Low phonon transparency of the interface between the superconductor and the substrate causes substantial re-trapping of phonons providing high quantum efficiency and the operating time of approximately 1 ms at 1 K. Due to the small number of quasiparticles, the noise equivalent power of the detector determined by the quasiparticle generation-recombination noise can be as small as approximately 10(exp -19) W/Hz(exp 1/2) at He4 temperatures.
    Keywords: Electronics and Electrical Engineering
    Type: Proceedings of the Twenlfth International Symposium on Space Terahertz Technology; 112-120; JPL-Publ-01-18
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  • 5
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    Design Considerations for Heavily-Doped Cryogenic Schottky Diode Varactor Multipliers (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-17
    Description: Diode modeling for Schottky varactor frequency multipliers above 500 GHz is presented with special emphasis placed on simple models and fitted equations for rapid circuit design. Temperature- and doping-dependent mobility, resistivity, and avalanche current multiplication and breakdown are presented. Next is a discussion of static junction current, including the effects of tunneling as well as thermionic emission. These results have been compared to detailed measurements made down to 80 K on diodes fabricated at JPL, followed by a discussion of the effect on multiplier efficiency. Finally, a simple model of current saturation in the undepleted active layer suitable for inclusion in harmonic balance simulators is derived.
    Keywords: Electronics and Electrical Engineering
    Type: Proceedings of the Twenlfth International Symposium on Space Terahertz Technology; 485-494; JPL-Publ-01-18
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  • 6
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    Power supply with air core transformer and seperated power supplies for high dynamic range (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-17
    Description: A power supply for a quadrupole mass spectrometer which operates using an RF signal. The RF signal is controllable via a feedback loop. The feedback loop is from the output, through a comparator, and compared to a digital signal. An air core transformer is used to minimize the weight. The air core transformer is driven via two out of phase sawtooth signals which drive opposite ends of the transformer.
    Keywords: Electronics and Electrical Engineering
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  • 7
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    Three-dimensional modular electronic interconnection system (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-17
    Description: A three-dimensional connection system uses a plurality of printed wiring boards with connectors completely around the printed wiring boards, and connected by an elastomeric interface connector. The device includes internal space to allow room for circuitry. The device is formed by stacking an electronics module, an elastomeric interface board on the electronics module such that the interface board's exterior makes electrical connection with the connectors around the perimeter of the interface board, but the internal portion is open to allow room for the electrical devices on the printed wiring board. A plurality of these devices are stacked between a top stiffener and a bottom device, and held into place by alignment elements.
    Keywords: Electronics and Electrical Engineering
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  • 8
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    Magnetically coupled signal isolator (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-17
    Description: A current determiner having an output at which representations of input currents are provided having an input conductor for the input current and a current sensor supported on a substrate electrically isolated from one another but with the sensor positioned in the magnetic fields arising about the input conductor due to any input currents. The sensor extends along the substrate in a direction primarily perpendicular to the extent of the input conductor and is formed of at least a pair of thin-film ferromagnetic layers separated by a non-magnetic conductive layer. The sensor can be electrically connected to electronic circuitry formed in the substrate including a nonlinearity adaptation circuit to provide representations of the input currents of increased accuracy despite nonlinearities in the current sensor, and can include further current sensors in bridge circuits.
    Keywords: Electronics and Electrical Engineering
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  • 9
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    Electron tunneling infrared sensor module with integrated control circuitry (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-17
    Description: In an integrated electron tunneling sensor, an automatic tunneling control circuit varies a high voltage bias applied to the sensor deflection electrode in response to changes in sensor output to maintain the proper gap between the sensor tip and membrane. The control circuit ensures stable tunneling activity in the presence of large signals and other disturbances to the sensor. Output signals from the module may be derived from the amplified sensor output. The integrated sensor module is particularly well adapted for use in blood glucose measurement and monitoring system.
    Keywords: Electronics and Electrical Engineering
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  • 10
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    A 1.2 THz Planar Tripler Using GaAs Membrane Based Chips (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-16
    Description: Fabrication technology for submillimeter-wave monolithic circuits has made tremendous progress in recent years and it is now possible to fabricate sub-micron GaAs Schottky devices on a number of substrate types, such as membranes, frame-less membranes or substrateless circuits. These new technologies allow designers to implement very high frequency circuits, either Schottky mixers or multipliers, in a radically new manner. This paper will address the design, fabrication, and preliminary results of a 1.2 THz planar tripler fabricated on a GaAs frame-less membrane, the concept of which was described previously. The tripler uses a diode pair in an antiparallel configuration similar to designs used at lower frequency. To date, this tripler has produced a peak output power of 80 microW with 0.9% efficiency at room temperature (at 1126 GHz). The measured fix-tuned 3 dB bandwidth is about 3.5%. When cooled, the output power reached a peak of 195 microW at 120 K and 250 microW at 50 K. The ease with which this circuit was implemented along with the superb achieved performance indicates that properly designed planar devices such as this tripler can now usher in a new era of practical very high frequency multipliers.
    Keywords: Electronics and Electrical Engineering
    Type: Proceedings of the Twelfth International Symposium on Space Terahertz Technology; 310-319; JPL-Publ-01-18
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  • 11
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    Results of the 2000 JPL Balloon Flight Solar Cell Calibration Program (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-16
    Description: The 2000 solar cell calibration balloon flight campaign consisted of two flights, which occurred on June 27, 2000, and July 5, 2000. All objectives of the flight program were met. Sixty-two modules were carried to an altitude of approximately 120,000 ft (36.6 km). Full I-V curves were measured on sixteen of these modules, and output at a fixed load was measured on thirty-seven modules (forty-six cells), with some modules repeated on the second flight. Nine modules were flown for temperature measurement only. This data was corrected to 28 C and to 1 AU (1.496x10(exp 8) km). The calibrated cells have been returned to their owners and can now be used as reference standards in simulator testing of cells and arrays.
    Keywords: Electronics and Electrical Engineering
    Type: JPL-Publ-00-19
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  • 12
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    Radiation Response of Emerging FeRAM Technology (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-16
    Description: The test results of measurements performed on two different sizes of ferroelectric random access memory (FeRAM) suggest the degradation is due to the low radiation tolerance of sense amplifiers and reference voltage generators which are based on commercial complementary metal oxide semiconductor (CMOS) technology. This paper presents total ionizing dose (TID) testing of 64Kb Ramtron FM1608 and 256Kb Ramtron FM1808.
    Keywords: Electronics and Electrical Engineering
    Type: Non-Volatile Memory Technology Symposium 2001: Proceedings; 77-79; JPL-Publ-01-15
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  • 13
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    Modular electronics packaging system (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-15
    Description: A modular electronics packaging system includes multiple packaging slices that are mounted horizontally to a base structure. The slices interlock to provide added structural support. Each packaging slice includes a rigid and thermally conductive housing having four side walls that together form a cavity to house an electronic circuit. The chamber is enclosed on one end by an end wall, or web, that isolates the electronic circuit from a circuit in an adjacent packaging slice. The web also provides a thermal path between the electronic circuit and the base structure. Each slice also includes a mounting bracket that connects the packaging slice to the base structure. Four guide pins protrude from the slice into four corresponding receptacles in an adjacent slice. A locking element, such as a set screw, protrudes into each receptacle and interlocks with the corresponding guide pin. A conduit is formed in the slice to allow electrical connection to the electronic circuit.
    Keywords: Electronics and Electrical Engineering
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  • 14
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    Gap Excitations and Series Loads in Microstrip Lines: Equivalent Network Characterization with Application to THz Circuits (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-15
    Description: At submillimeter wavelengths typical gap discontinuities in microstrip, CPW lines or at antenna terminals, which might contain diodes or active elements, cannot be viewed as simple quasi statically evaluated lumped elements. Planar Schottky diodes at 2.5 THz, for example, have a footprint that is comparable to a wavelength. Thus, apart from modelling the diodes themselves, the connection with their exciting elements (antennas or microstrip) gives rise to parasitics. Full wave or strictly numeric approaches can be used to account for these parasitics but at the expense of generality of the solution and the CPU time of the calculation. In this paper an equivalent network is derived that accurately accounts for large gap discontinuities (with respect to a wavelength) without suffering from the limitations of available numeric techniques.
    Keywords: Electronics and Electrical Engineering
    Type: Proceedings of the Twenlfth International Symposium on Space Terahertz Technology; 527-539; JPL-Publ-01-18
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  • 15
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    Experimental Investigation of Local Oscillator Chains with GaAs Planar Diodes at Cryogenic Temperatures (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-15
    Description: This paper will describe a robust test-bed that has been built to measure multiplier performance over a wide range of temperatures and frequencies. In a 182-212 GRz designed balanced doubler the peak efficiency at 201 GHz improves from 22% to 28% upon cooling from 300 K to 120 K. This stage is then used to pump a 362-424 GRz balanced planar doubler. The peak chain efficiency increases from 3.4% to 6% when the two cascaded doublers are cooled from 300 K to 120 K. This enables the production of 10 mW of peak output power at 377 GHz, which ought to be sufficient for driving the next stage multiplier.
    Keywords: Electronics and Electrical Engineering
    Type: Proceedings of the Twenlfth International Symposium on Space Terahertz Technology; 495-503; JPL-Publ-01-18
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  • 16
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    Temperature Effects in Varactors and Multipliers (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-15
    Description: Varactor diode multipliers are a critical part of many THz measurement systems. The power and efficiencies of these devices limit the available power for THz sources. Varactor operation is determined by the physics of the varactor device and a careful doping profile design is needed to optimize the performance. Higher doped devices are limited by junction breakdown and lower doped structures are limited by current saturation. Higher doped structures typically have higher efficiencies and lower doped structures typically have higher powers at the same operating frequency and impedance level. However, the device material properties are also a function of the operating temperature. Recent experimental evidence has shown that the power output of a multiplier can be improved by cooling the device. We have used a particle Monte Carlo simulation to investigate the temperature dependent velocity vs. electric field in GaAs. This information was then included in a nonlinear device circuit simulator to predict multiplier performance for various temperatures and device designs. This paper will describe the results of this analysis of temperature dependent multiplier operation.
    Keywords: Electronics and Electrical Engineering
    Type: Proceedings of the Twelfth International Symposium on Space Terahertz Technology; 340-351; JPL-Publ-01-18
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  • 17
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    Design and Performance of a 2.7 THz Waveguide Tripler (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-15
    Description: The design and performance of a 0.9 THz to 2.7 THz waveguide tripler are presented. An unusual split block configuration with parallel input and output waveguides accommodates a monolithic membrane diode (MoMeD) circuit. Submicron planar GaAs Schottky diodes in single and antiparallel pairs are implemented with matching filters on a 3-micrometer thick suspended substrate as part of the MoMeD structure. The filters are a combination of short hammerheads and high-low impedance elements. Only a few circuit variations have been measured to date. The best current performance shows an output power of 0.1 microW and an efficiency of 0.002% at the band center frequency of 2.55 THz.
    Keywords: Electronics and Electrical Engineering
    Type: Proceedings of the Twelfth International Symposium on Space Terahertz Technology; 320-329; JPL-Publ-01-18
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  • 18
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    Novel Multiplexing Technique for Detector and Mixer Arrays (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-15
    Description: Future submillimeter and far-infrared space telescopes will require large-format (many 1000's of elements) imaging detector arrays to perform state-of-the-art astronomical observations. A crucial issue related to a focal plane array is a readout scheme which is compatible with large numbers of cryogenically-cooled (typically 〈 1 K) detectors elements. When the number of elements becomes of the order of thousands, the physical layout for individual readout amplifiers becomes nearly impossible to realize for practical systems. Another important concern is the large number of wires leading to a 0.1-0.3 K platform. In the case of superconducting transition edge sensors (TES), a scheme for time-division multiplexing of SQUID read-out amplifiers has been recently demonstrated. In this scheme the number of SQUIDs is equal to the number (N) of the detectors, but only one SQUID is turned on at a time. The SQUIDs are connected in series in each column of the array, so the number of wires leading to the amplifiers can be reduced, but it is still of the order of N. Another approach uses a frequency domain multiplexing scheme of the bolometer array. The bolometers are biased with ac currents whose frequencies are individual for each element and are much higher than the bolometer bandwidth. The output signals are connected in series in a summing loop which is coupled to a single SQUID amplifier. The total number of channels depends on the ratio between the SQUID bandwidth and the bolometer bandwidth and can be at least 100 according to the authors. An important concern about this technique is a contribution of the out-of-band Johnson noise which multiplies by factor N(exp 1/2) for each frequency channel. We propose a novel solution for large format arrays based on the Hadamard transform coding technique which requires only one amplifier to read out the entire array of potentially many 1000's of elements and uses approximately 10 wires between the cold stage and room temperature electronics. This can significantly reduce the complexity of the readout circuits.
    Keywords: Electronics and Electrical Engineering
    Type: Proceedings of the Twenlfth International Symposium on Space Terahertz Technology; 436-445; JPL-Publ-01-18
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  • 19
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    InP MMIC Chip Set for Power Sources Covering 80-170 GHz (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-15
    Description: We will present a Monolithic Millimeter-wave Integrated Circuit (MMIC) chip set which provides high output-power sources for driving diode frequency multipliers into the terahertz range. The chip set was fabricated at HRL Laboratories using a 0.1-micrometer gate-length InAlAs/InGaAs/InP high electron mobility transistor (HEMT) process, and features transistors with an f(sub max) above 600 GHz. The HRL InP HEMT process has already demonstrated amplifiers in the 60-200 GHz range. In this paper, these high frequency HEMTs form the basis for power sources up to 170 GHz. A number of state-of-the-art InP HEMT MMICs will be presented. These include voltage-controlled and fixed-tuned oscillators, power amplifiers, and an active doubler. We will first discuss an 80 GHz voltage-controlled oscillator with 5 GHz of tunability and at least 17 mW of output power, as well as a 120 GHz oscillator providing 7 mW of output power. In addition, we will present results of a power amplifier which covers the full WRIO waveguide band (75-110 GHz), and provides 40-50 mW of output power. Furthermore, we will present an active doubler at 164 GHz providing 8% bandwidth, 3 mW of output power, and an unprecedented 2 dB of conversion loss for an InP HEMT MMIC at this frequency. Finally, we will demonstrate a power amplifier to cover 140-170 GHz with 15-25 mW of output power and 8 dB gain. These components can form a power source in the 155-165 GHz range by cascading the 80 GHz oscillator, W-band power amplifier, 164 GHz active doubler and final 140-170 GHz power amplifier for a stable, compact local oscillator subsystem, which could be used for atmospheric science or astrophysics radiometers.
    Keywords: Electronics and Electrical Engineering
    Type: Proceedings of the Twenlfth International Symposium on Space Terahertz Technology; 477-484; JPL-Publ-01-18
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  • 20
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    A Low-Noise NbTiN Hot Electron Bolometer Mixer (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-15
    Description: Hot electron bolometer (HEB) mixer elements, based on niobium titanium nitride (NbTiN) thin film technology, have been fabricated on crystalline quartz substrates over a 20 nm thick AlN buffer layer. The film was patterned by optical lithography, yielding bolometer elements that measure about 1 micrometer long and between 2 and 12 micrometers wide. These mixer chips were mounted in a fixed-tuned waveguide mixer block, and tested in the 600 and 800 GHz frequency range. The 3-dB output bandwidth of these mixers was determined to be about 2.5 GHz and we measured a receiver noise temperature of 270 K at 630 GHz using an intermediate frequency of 1.5 GHz. The receiver has excellent amplitude stability and the noise temperature measurements are highly repeatable. An 800 GHz receiver incorporating one of these mixer chips has recently been installed at the Sub-Millimeter Telescope in Arizona for field test and for astronomical observations.
    Keywords: Electronics and Electrical Engineering
    Type: Proceedings of the Twenlfth International Symposium on Space Terahertz Technology; 253-261; JPL-Publ-01-18
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  • 21
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    Nanoklystron: A Monolithic Tube Approach to THz Power Generation (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-15
    Description: The authors propose a new approach to THz power generation: the nanoklystron. Utilizing silicon micromachining techniques, the design and fabrication concept of a monolithic THz vacuum-tube reflex-klystron source is described. The nanoklystron employs a separately fabricated cathode structure composed of densely packed carbon nanotube field emitters and an add-in repeller. The nanotube cathode is expected to increase the current density, extend the cathode life and decrease the required oscillation voltage to values below 100 V. The excitation cavity is based on ridged-waveguide and differs from the conventional cylindrical re-entrant structures found in lower frequency klystrons. A quasi-static field analysis of the cavity and output coupling structure show excellent control of the quality factor and desired field distribution. Output power is expected to occur through an iris coupled matched rectangular waveguide and integrated pyramidal feed horn. The entire circuit is designed so as to be formed monolithically from two thermocompression bonded silicon wafers processed using deep reactive ion etching (DRIE) techniques. To expedite prototyping, a 600 GHz mechanically machined structure has been designed and is in fabrication. A complete numeric analysis of the nanoklystron circuit, including the electron beam dynamics has just gotten underway. Separate evaluation of the nanotube cathodes is also ongoing. The authors will describe the progress to date as well as plans for the immediate implementation and testing of nanoklystron prototypes at 640 and 1250 GHz.
    Keywords: Electronics and Electrical Engineering
    Type: Proceedings of the Twenlfth International Symposium on Space Terahertz Technology; 81-90; JPL-Publ-01-18
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  • 22
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    Monolithic THz Frequency Multipliers (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-15
    Description: Frequency multipliers are required as local oscillator sources for frequencies up to 2.7 THz for FIRST and airborne applications. Multipliers at these frequencies have not previously been demonstrated, and the object of this work was to show whether such circuits are really practical. A practical circuit is one which not only performs as well as is required, but also can be replicated in a time that is feasible. As the frequency of circuits is increased, the difficulties in fabrication and assembly increase rapidly. Building all of the circuit on GaAs as a monolithic circuit is highly desirable to minimize the complexity of assembly, but at the highest frequencies, even a complete monolithic circuit is extremely small, and presents serious handling difficulty. This is compounded by the requirement for a very thin substrate. Assembly can become very difficult because of handling problems and critical placement. It is very desirable to make the chip big enough to that it can be seen without magnification, and strong enough that it may be picked up with tweezers. Machined blocks to house the chips present an additional challenge. Blocks with complex features are very expensive, and these also imply very critical assembly of the parts. It would be much better if the features in the block were as simple as possible and non-critical to the function of the chip. In particular, grounding and other electrical interfaces should be done in a manner that is highly reproducible.
    Keywords: Electronics and Electrical Engineering
    Type: Proceedings of the Twelfth International Symposium on Space Terahertz Technology; 297-309; JPL-Publ-01-18
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  • 23
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    Low Noise 1.2 THz SIS Receiver (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-15
    Description: We present the development of a low noise superconductor insulator superconductor (SIS) mixer for the 1.1 - 1.25 THz heterodyne receiver of FIRST space radiotelescope. The quasi-optical SIS mixer has two NbTiN/AlN/Nb junctions with critical current density 30 kA/sq cm. The individual junction area is close to 0.65 square micrometers. The SIS junctions are coupled to the optical input beam through a planar double slot antenna and a Si hyperhemispherical lens. The minimum DSB receiver noise temperature is 650 K, about 12 hv/k.
    Keywords: Electronics and Electrical Engineering
    Type: Proceedings of the Twelfth International Symposium on Space Terahertz Technology; 21-22; JPL-Publ-01-18
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  • 24
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    Proceedings of the Twelfth International Symposium on Space Terahertz Technology (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-15
    Description: The Twelfth International Symposium on Space Terahertz Technology was held February 14-16, 2001 in San Diego, California, USA. This symposium was jointly sponsored by the National Aeronautics and Space Administration (NASA) and the Jet Propulsion Laboratory, California Institute of Technology. The symposium featured sixty nine presentations covering a wide variety of technical topics relevant to Terahertz Technology. The presentations can be divided into five broad technology areas: Hot Electron Bolometers, superconductor insulator superconductor (SIS) technology, local oscillator (LO) technology, Antennas and Measurements, and Direct Detectors. The symposium provides scientists, engineers, and researchers working in the terahertz technology and science fields to engineers their work and exchange ideas with colleagues.
    Keywords: Electronics and Electrical Engineering
    Type: JPL-Publ-01-18 , Twenlfth International Symposium on Space Terahertz Technology; Feb 14, 2001 - Feb 16, 2001; San Diego, CA; United States|Proceedings of the Twenlfth International Symposium on Space Terahertz Technology
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  • 25
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    Reduced T(sub c) Niobium Superconducting HEB Mixers (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-15
    Description: A reduction in the mixer noise is expected when using superconductors with a lower transition temperature (T(sub c)) since the thermal noise components of the mixer noise should scale with T(sub c). Also, the local oscillator (LO) power required for a diffusion-cooled device should decrease as T(sub c) when T(sub bath) 〈〈 T(sub c). We previously studied mixing in aluminum based hot-electron bolometers (HEBs) at microwave frequencies (approximately 30 GHz), and observed a significant improvement in noise performance, and a reduction in LO power as predicted. However, the bias voltage range over which good mixer performance was observed was approximately 5 - 10 microV. These devices are thus susceptible to saturation effects, in particular output saturation. In the present work, we have investigated Nb HEBs whose T(sub c) is lowered by applying a magnetic field. The goal is to study a case intermediate between Nb and Al, and hopefully to find properties that will allow use in practical receivers. A 15 kOe perpendicular magnetic field was applied to a Nb HEB (L = 0.16 micrometers, W = 0.08 micrometers, R(sub N) = 90 ohms) to reduce T(sub c) from 5.2 K to 2.4 K. The mixer noise, as inferred from the output noise and the conversion efficiency, decreased from 390 K, DSB to 171 K, DSB. The LO power required for near optimum mixer conversion efficiency (eta(sub mixer) = -9 dB in this device) was 8 nW in zero field, and approximately 2 nW when T(sub c) was reduced to 2.4 K. T(sub bath) = 0.22 K. The conversion bandwidth was previously measured to be 2.4 GHz and the same bandwidth was observed in the presence of a magnetic field. By lowering T(sub c), the voltage range over which good mixing was observed also decreased. However, even with T(sub c) reduced to 2.4 K, the conversion efficiency dropped by 3 dB from its maximum value only when the bias voltage was changed by approximately 90 microV. Saturation effects should thus be much less of a concern in these devices than in Al HEBS. In situations where the application of a large magnetic field is not feasible, we suggest using Ta based HEBS. Ta HEBs should have T(sub c) = 3 - 3.5 K and material properties very similar to Nb.
    Keywords: Electronics and Electrical Engineering
    Type: Proceedings of the Twenlfth International Symposium on Space Terahertz Technology; 36-41; JPL-Publ-01-18
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    A New Concept for Non-Volatile Memory: The Electric-Pulse Induced Resistive Change Effect in Colossal Magnetoresistive Thin Films (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-15
    Description: A novel electric pulse-induced resistive change (EPIR) effect has been found in thin film colossal magnetoresistive (CMR) materials, and has shown promise for the development of resistive, nonvolatile memory. The EPIR effect is induced by the application of low voltage (〈 4 V) and short duration (〈 20 ns) electrical pulses across a thin film sample of a CMR material at room temperature and under no applied magnetic field. The pulse can directly either increase or decrease the resistance of the thin film sample depending on pulse polarity. The sample resistance change has been shown to be over two orders of magnitude, and is nonvolatile after pulsing. The sample resistance can also be changed through multiple levels - as many as 50 have been shown. Such a device can provide a way for the development of a new kind of nonvolatile multiple-valued memory with high density, fast write/read speed, low power-consumption, and potential high radiation-hardness.
    Keywords: Electronics and Electrical Engineering
    Type: Non-Volatile Memory Technology Symposium 2001: Proceedings; 18-24; JPL-Publ-01-15
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    Avalanche Photodiode Arrays for Optical Communications Receivers (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-15
    Description: An avalanche photodiode (APD) array for ground-based optical communications receivers is investigated for the reception of optical signals through the turbulent atmosphere. Kolmogorov phase screen simulations are used to generate realistic spatial distributions of the received optical field. It is shown that use of an APD array for pulse-position modulation detection can improve performance by up to 4 dB over single APD detection in the presence of turbulence, but that photon-counting detector arrays yield even greater gains.
    Keywords: Electronics and Electrical Engineering
    Type: JPL-TMO-PR-42-144
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    AEA Technologies Battery Cell By-pass Device Activation: An Update (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-13
    Description: The objectives are to: (1) Verify the Performance of AEA Cell Bypass Protection Device (CBPD) under simulated EOS-Aqua/Aura flight hardware configuration; (2) Assess the Safety of the hardware under an inadvertent firing of CBPD switch, as well as the closing of CBPD switch under simulated high cell impedance; and (3) Confirm that the mode of operation of CBPD switch is the formation of a continuous low impedance path (a homogeneous low melting point alloy).
    Keywords: Electronics and Electrical Engineering
    Type: 2001 NASA Aerospace Battery Workshop; Nov 27, 2001 - Nov 29, 2001; Huntsville, AL; United States
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    Preliminary Results of Field Emission Cathode Tests (2001)
    In:  CASI
    Details
    Publication Date: 2019-08-13
    Description: Preliminary screening tests of field emission cathodes such as chemical vapor deposited (CVD) diamond, textured pyrolytic graphite, and textured copper were conducted at background pressures typical of electric thruster test facilities to assess cathode performance and stability. Very low power electric thrusters which provide tens to hundreds micronewtons of thrust may need field emission neutralizers that have a capability of tens to hundreds of microamperes. From current voltage characteristics, it was found that the CVD diamond and textured metals cathodes clearly satisfied the Fowler-Nordheim emission relation. The CVD diamond and a textured copper cathode had average current densities of 270 and 380 mA/sq cm, respectively, at the beginning-of-life. After a few hours of operation the cathode emission currents degraded by 40 to 75% at background pressures in the 10(exp -5) Pa to 10(exp -4) Pa range. The textured pyrolytic graphite had a modest current density at beginning-of-life of 84 mA/sq cm, but this cathode was the most stable of all. Extended testing of the most promising cathodes is warranted to determine if current degradation is a burn-in effect or whether it is a long-term degradation process. Preliminary experiments with ferroelectric emission cathodes, which are ceramics with spontaneous electric polarization, were conducted. Peak current densities of 30 to 120 mA/sq cm were obtained for pulse durations of about 500 ns in the 10(exp -4) Pa pressure range.
    Keywords: Electronics and Electrical Engineering
    Type: NASA/TM-2001-211318 , E-13129 , NAS 1.15:211318 , IEPC-01-280 , 27th International Electric Propulsion Conference; Oct 14, 2001 - Oct 19, 2001; Pasadena, CA; United States
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    Terahertz-Regime, Micro-VEDs: Evaluation of Micromachined TWT Conceptual Designs (2001)
    In:  Other Sources
    Details
    Publication Date: 2019-07-19
    Description: Summary form only given. The Terahertz (THz) region of the electromagnetic spectrum (approx.300-3000 GHz) has enormous potential for high-data-rate communications, spectroscopy, astronomy, space research, medicine, biology, surveillance, remote sensing, industrial process control, etc. The most critical roadblock to full exploitation of the THz band is lack of coherent radiation sources that are powerful (0.01-10.0 W continuous wave), efficient (〉1 %), frequency agile (instantaneously tunable over 1% bandwidths or more), reliable, and relatively inexpensive. Micro-machined Vacuum Electron Devices (micro-VEDs) represent a promising solution. We describe prospects for miniature, THz-regime TWTs fabricated using micromachining techniques. Several approx.600 GHz conceptual designs are compared. Their expected performance has been analyzed using SD, 2.51), and 3D TWT codes. A folded waveguide (FWG) TWT forward-wave amplifier design is presented based on a Northrop Grumman (NGC) optimized design procedure. This conceptual device is compared to the simulated performance of a novel, micro-VED helix TWT. Conceptual FWG TWT backward-wave amplifiers and oscillators are also discussed. A scaled (100 GHz) FWG TWT operating at a relatively low voltage (-12 kV) is under development at NGC. Also, actual-size micromachining experiments are planned to evaluate the feasibility of arrays of micro-VED TWTs. Progress and results of these efforts are described. This work was supported, in part by AFOSR, ONR, and NSF.
    Keywords: Electronics and Electrical Engineering
    Type: Pulsed Power Plasma Science. IEEE Conference Record - Abstracts; 2001; 161|IEEE International Conference on Plasma Science (ICOPS); Jun 17, 2001 - Jun 22, 2001; Las Vegas, NV; United States
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    Radiation Effects on DC-DC Converters (2001)
    In:  Other Sources
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    Publication Date: 2019-07-18
    Description: In this work, several DC-DC converters were designed and built. The converters are Buck Buck-Boost, Cuk, Flyback, and full-bridge zero-voltage switched. The total ionizing dose radiation and single event effects on the converters were investigated. The experimental results for the TID effects tests show that the voltages of the Buck Buck-Boost, Cuk, and Flyback converters increase as total dose increased when using power MOSFET IRF250 as a switching transistor. The change in output voltage with total dose is highest for the Buck converter and the lowest for Flyback converter. The trend of increase in output voltages with total dose in the present work agrees with those of the literature. The trends of the experimental results also agree with those obtained from PSPICE simulation. For the full-bridge zero-voltage switch converter, it was observed that the dc-dc converter with IRF250 power MOSFET did not show a significant change of output voltage with total dose. In addition, for the dc-dc converter with FSF254R4 radiation-hardened power MOSFET, the output voltage did not change significantly with total dose. The experimental results were confirmed by PSPICE simulation that showed that FB-ZVS converter with IRF250 power MOSFET's was not affected with the increase in total ionizing dose. Single Event Effects (SEE) radiation tests were performed on FB-ZVS converters. It was observed that the FB-ZVS converter with the IRF250 power MOSFET, when the device was irradiated with Krypton ion with ion-energy of 150 MeV and LET of 41.3 MeV-square cm/mg, the output voltage increased with the increase in fluence. However, for Krypton with ion-energy of 600 MeV and LET of 33.65 MeV-square cm/mg, and two out of four transistors of the converter were permanently damaged. The dc-dc converter with FSF254R4 radiation hardened power MOSFET's did not show significant change at the output voltage with fluence while being irradiated by Krypton with ion energy of 1.20 GeV and LET of 25.97 MeV-square cm/mg. This might be due to fact that the device is radiation hardened.
    Keywords: Electronics and Electrical Engineering
    Type: P23 , HBCUs/OMUs Research Conference Agenda and Abstracts; 31; NASA/TM-2001-211289
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    Study of Electrical Contacts and Devices in Advanced Semiconductors (2001)
    In:  Other Sources
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    Publication Date: 2019-07-18
    Description: Research conducted at Tuskegee University concentrates on electrical contacts to GaN films and their characterization with the objective of understanding contact formation and realizing low-resistance metal contacts. Contact properties are known to be strongly related to surface preparation. It appears that the as-received material had a thin oxide film on the surface of the GaN film. Various cleaning treatments were employed in order to render the surface contamination free and removal of the oxide film. Metal films were then deposited by e-beam evaporation. Electrical characteristics of these contacts indicated that the optimal treatment was an organic solvent cleaning followed by etching in buffered oxide solution. Contacts established with Al were observed to be ohmic in nature, whereas Au, Cr, Ti, and Pt exhibit rectifying contacts. Platinum contacts were almost ideal as shown by an ideality factor of 1.02.
    Keywords: Electronics and Electrical Engineering
    Type: P31 , HBCUs/OMUs Research Conference Agenda and Abstracts; 39; NASA/TM-2001-211289
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    All-Optical Micro Motors Based on Moving Gratings in Photosensitive Media (2001)
    In:  Other Sources
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    Publication Date: 2019-07-18
    Description: An all-optical micromotor with a rotor driven by a traveling wave of surface deformation of a stator being in contact with the rotor is being studied. Instead of an ultrasonic wave produced by an electrically driven piezoelectric actuator as in ultrasonic motors, the wave is a result of a photo-induced surface deformation of a photosensitive material produced by an incident radiation. A thin piezoelectric polymer will deform more easily LiNbO3 or metal when irradiated with light. The type of photosensitive material studied are piezoelectric polymers with and without coatings for connecting electrodes. In order to be considered as a possible candidate for micromotors, the material should exhibit surface deformation produced by a laser beam of the order of 10 microns. This is compared to the deformations produced by static holographic gratings studied in photorefractive crystals of LiNbO3 using high vertical resolution surface profilometer Dektak 3 and surface interferometer WYKO. An experimental setup showing the oscillations has been developed. The setup uses a chopped beam from an Argon ion laser to produce the deformation while a probe beam is reflected by the thin film into a fiber which is then detected on an oscilloscope. A ramp voltage signal generator will drive the piezoelectric film in another experiment to determine the resonance of the film. A current is generated when light is incident upon the film and this current can be measured. The reverse process has already been demonstrated in other piezoelectric actuators. Changing voltage, polarity, and frequency of the signal can easily generate vibrations similar to those when light is incident on the film. This can be compared to the effects of laser interaction with light absorbing fluids such as solutions of 2,9,16,23-Tetrakis(phenylthio)-29H, 31 H-phthalocyanine in chlorobenzene in capillary tubes, The possibility of using a liquid with the piezoelectric film would be a novel idea for a micromotor since the interaction of a single low power focused laser beam at 633 nm with such fluid produced an intensive circular motion.
    Keywords: Electronics and Electrical Engineering
    Type: P5 , HBCUs/OMUs Research Conference Agenda and Abstracts; 13; NASA/TM-2001-211289
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    Carbon Nanotube Scanning Probe for Surface Profiling of DUV and 193 nm Photoresist Pattern (2001)
    In:  Other Sources
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    Publication Date: 2019-07-18
    Description: The continual scaling down of semiconductors to 100 nm and below necessitates a characterization technique to resolve high aspect ratio features in the nanoscale regime. This paper reports the use of atomic force microscope coupled with high aspect ratio multi-walled carbon nanotube scanning probe tip for the purpose of imaging surface profile of photoresists. Multi-walled carbon nanotube tips used in this work are 5-10 nm in diameter and about a micron long. Their exceptional mechanical strength and ability to reversibly buckle enable to resolve steep, deep nanometer-scale features. Images of photoresist patterns generated by 257 nm interference lithography as well as 193 nm lithography are presented to demonstrate multi-walled carbon nanotube scanning probe tip for applications in metrology.
    Keywords: Electronics and Electrical Engineering
    Type: SPIE Microlithography Meeting; Unknown
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    Traveling-Wave Membrane Photomixers (2001)
    In:  Other Sources
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    Publication Date: 2019-07-18
    Description: Traveling-wave photomixers have superior performance when compared with lumped area photomixers in the 1 to 3 THz frequency range. Their large active area and distributed gain mechanism assure high thermal damage threshold and elimination of the capacitive frequency roll-off. However, the losses experienced by the radio frequency wave traveling along the coplanar strips waveguide (due to underlying semi-infinite GaAs substrate) were a serious drawback. In this paper we present device designs and an experimental setup that make possible the realization of photomixers on membranes which eliminate the losses.
    Keywords: Electronics and Electrical Engineering
    Type: Proceedings of the Twenlfth International Symposium on Space Terahertz Technology; 233; JPL-Publ-01-18
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    Embedded Coplanar Strips Traveling-Wave Photomixers (2001)
    In:  Other Sources
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    Publication Date: 2019-07-18
    Description: The electric field distribution in photomixers with electrodes deposited on the surface has already been calculated. It was shown that the strength of the electric field diminishes rapidly with depth. It was argued that the resulting reduction of the effective interaction volume of the device lowers the optical-to-heterodyne conversion. In this paper, we will present the results of our investigation on the influence of the electrode placement on the performance of photomixers. We have fabricated and measured traveling-wave photomixer devices which have both embedded and surface electrodes - the nominal spacing between the electrodes was 2 micrometers. Devices were made using either low-temperature-grown (LTG)-GaAs or ErAs:GaAs as the photoconductive material. The dark current, photocurrent, and radio frequency (RF) emission were measured at nominally 1 THz. The experimental data show a surprising difference in the behavior of ErAs:GaAs devices when the electrodes are embedded. A factor of two increase in RF radiation is observed for electric fields 〈 20 kV/cm. No such improvement was observed for the LTG-GaAs devices. We argue that the distinctive behavior of the two photoconductive materials is due to differences in the crystal structure - LTG-GaAs is isotropic, while ErAs:GaAs is uniaxial. We find that the carrier mobility in-plane (parallel) to the ErAs layers in the ErAs:GaAs superlattice is larger than orthogonal to these layers. The data indicate that carrier velocity overshoot is responsible for the excess radiation produced for the embedded electrode ErAs:GaAs devices.
    Keywords: Electronics and Electrical Engineering
    Type: Proceedings of the Twenlfth International Symposium on Space Terahertz Technology; 91; JPL-Publ-01-18
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    Modeling of Kink-Shaped Carbon-Nanotube Schottky Diode with Gate Bias Modulation (2001)
    In:  Other Sources
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    Publication Date: 2019-07-18
    Description: A model is proposed for the recent gate-voltage (V(sub G)) modulation experiment of a kink-shaped carbon nanotube (NT) Schottky diode. Since larger V(sub G) increases both the forward and the reverse turn-on voltages of the diode in the experiment, we show that: (1) the rectification must occur at the kink where the metallic and the semiconducting NTs meet, and not at the electrode contact, and (2) the semiconducting NT must be n-type. The turn-on voltages are derived analytically as a function of V(sub G) with the electrode contact contribution and a good agreement is obtained with the experimental data.
    Keywords: Electronics and Electrical Engineering
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    Sensor Development for Active Flow Control (2001)
    In:  Other Sources
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    Publication Date: 2019-07-18
    Description: Presented are the developmental efforts for MEMS sensors for a closed-loop active flow control in a low-speed wind tunnel evaluation. The MEMS sensors are designed in-house and fabricated out of house, and the shear sensors are a thermal type that are collocated with temperature and pressure sensors on a flexible polyimide sheet, which conforms to surfaces of a simple curvature. A total of 6 sensors are located within a 1.5 by 3 mm area as a cluster with each sensor being 300 pm square. The thickness of this sensor cluster is 75 pm. Outputs from the shear sensors have been compared with respect to those of the Preston tube for evaluation of the sensors on a flat plate. Pressure sensors are the absolute type and have recorded pressure measurements within 0.05 percent of the tunnel ESP pressure sensor readings. The sensors and signal conditioning electronics have been tested on both a flat plate and a ramp in Langley s 15-Inch Low-Turbulence Tunnel. The system configuration and control PC is configured with LabView, where calibration constants are stored for desired compensation and correction. The preliminary test results are presented within.
    Keywords: Electronics and Electrical Engineering
    Type: NASA Glenn Research Center UEET (Ultra-Efficient Engine Technology) Program: Agenda and Abstracts; 38
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    Characterization of a Multilayered Dielectric Transmissive Phase Modulator (2001)
    In:  Other Sources
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    Publication Date: 2019-07-17
    Description: We describe a multilayered dielectric stack configuration designed specifically for use as a transmissive phase modulator for broadband optical signals. Applications for this device range from full aperture wavefront correction to nonmechanical beam steering arrays for free space optical communication links. Our implementation employs alternating GaAs and AlAs layers of varying thickness on a GaAs substrate to create a bandpass region of high average transmission centered about the one micrometer wavelength. Within this transmission bandpass, the phase component of the complex transmission coefficient varies in a near-linear fashion with respect to wavelength. The transmission bandpass is designed to have a bandwidth of 21.0 nm (or 6.3THz frequency bandwidth) and to have an edge-to-edge phase change of greater than 47T radians. Modification of the stack materials' optical properties causes the transmission profile to shift spectrally, resulting in a phase modulation for bands of transmitted frequencies. Our broadband phase modulator imparts up to a full-cycle of phase modulation with low loss and low group velocity dispersion. We identify several methods for implementing the requisite modulation, including refractive index modulation through free carrier injection and optical path length modulation through variation in angle of incidence. At least one sample comprising 91 alternating layers has been fabricated to exhibit the bandpass properties required for optical signal phase modulation. We experimentally characterize the sample using an interferometer and spectrometer to measure the transmitted signal spectrum and relative phase modulation. We compare the experimental data to computational predictions and discuss the results.
    Keywords: Electronics and Electrical Engineering
    Type: International Society for Optical Engineering Annual Meeting; Aug 02, 2001; San Diego, CA; United States
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    A Compact X-Ray System for Support of High Throughput Crystallography (2001)
    In:  Other Sources
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    Publication Date: 2019-07-17
    Description: Standard x-ray systems for crystallography rely on massive generators coupled with optics that guide X-ray beams onto the crystal sample. Optics for single-crystal diffractometry include total reflection mirrors, polycapillary optics or graded multilayer monochromators. The benefit of using polycapillary optic is that it can collect x-rays over tile greatest solid angle, and thus most efficiently, utilize the greatest portion of X-rays emitted from the Source, The x-ray generator has to have a small anode spot, and thus its size and power requirements can be substantially reduced We present the design and results from the first high flux x-ray system for crystallography that combine's a microfocus X-ray generator (40microns FWHM Spot size at a power of 45 W) and a collimating, polycapillary optic. Diffraction data collected from small test crystals with cell dimensions up to 160A (lysozyme and thaumatin) are of high quality. For example, diffraction data collected from a lysozyme crystal at RT yielded R=5.0% for data extending to 1.70A. We compare these results with measurements taken from standard crystallographic systems. Our current microfocus X-ray diffraction system is attractive for supporting crystal growth research in the standard crystallography laboratory as well as in remote, automated crystal growth laboratory. Its small volume, light-weight, and low power requirements are sufficient to have it installed in unique environments, i.e.. on-board International Space Station.
    Keywords: Electronics and Electrical Engineering
    Type: European Crystallographic Meeting; Aug 25, 2001; Cracow; Poland
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    X-Ray Characterization of Structural Defects in Seeded and Self-Seeded ZnSe Crystal Grown by PVT in Horizontal and Vertical Configurations (2001)
    In:  Other Sources
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    Publication Date: 2019-07-17
    Description: As part of a pre-flight ground based investigation of crystal growth of II-VI compound semiconductors, a number of ZnSe boules have been grown by physical vapor transport (PVT) at Marshall Space Flight Center. Boules were grown in both horizontal and vertical configurations and seeded and self-seeded growth techniques were employed. As-grown and/or cleaved boules were examined by a combination of synchrotron white beam x-ray topography (SWBXT) and high resolution triple axis diffraction (HRTXD) to characterized the structural defects and correlate them with the growth conditions. Horizontal grown boules tend to grow away from the ampoule wall (contactless growth) and generally exhibit large (110) facets parallel to the gravity vector. Vertical grown boules grew to the full diameter of the ampoule and exhibited no faceting. X-ray topography combined with back reflection x-ray diffraction revealed the presence of lamellar twins (180 deg type about the [111] axis) in horizontal grown boules while vertically grown boules contain a few large grains, some of which are twinned. X-ray topographs and reciprocal space maps recorded from the boules show the better crystal quality of horizontal grown boules. The relationship between crystal quality and gravity vector is investigated. Further, an attempt is made to extend the Hurle theory of twin nucleation in Czochralski grown crystals to explain the twinning mechanisms in horizontal grown boules.
    Keywords: Electronics and Electrical Engineering
    Type: 13th American Conference on Crystal Growth and Epitaxy; Aug 12, 2001; Burlington, VT; United States
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    2D Quantum Transport Modeling in Nanoscale MOSFETs (2001)
    In:  Other Sources
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    Publication Date: 2019-07-17
    Description: We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions, oxide tunneling and phase-breaking scattering are treated on an equal footing. Electron bandstructure is treated within the anisotropic effective mass approximation. We present the results of our simulations of MIT 25 and 90 nm "well-tempered" MOSFETs and compare them to those of classical and quantum corrected models. The important feature of quantum model is smaller slope of Id-Vg curve and consequently higher threshold voltage. These results are consistent with 1D Schroedinger-Poisson calculations. The effect of gate length on gate-oxide leakage and subthreshold current has been studied. The shorter gate length device has an order of magnitude smaller leakage current than the longer gate length device without a significant trade-off in on-current.
    Keywords: Electronics and Electrical Engineering
    Type: Mar 11, 2001 - Mar 16, 2001; Seattle, WA; United States
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    Electronic Model of a Ferroelectric Field Effect Transistor (2001)
    In:  Other Sources
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    Publication Date: 2019-07-17
    Description: A pair of electronic models has been developed of a Ferroelectric Field Effect transistor. These models can be used in standard electrical circuit simulation programs to simulate the main characteristics of the FFET. The models use the Schmitt trigger circuit as a basis for their design. One model uses bipolar junction transistors and one uses MOSFET's. Each model has the main characteristics of the FFET, which are the current hysterisis with different gate voltages and decay of the drain current when the gate voltage is off. The drain current from each model has similar values to an actual FFET that was measured experimentally. T'he input and o Output resistance in the models are also similar to that of the FFET. The models are valid for all frequencies below RF levels. No attempt was made to model the high frequency characteristics of the FFET. Each model can be used to design circuits using FFET's with standard electrical simulation packages. These circuits can be used in designing non-volatile memory circuits and logic circuits and is compatible with all SPICE based circuit analysis programs. The models consist of only standard electrical components, such as BJT's, MOSFET's, diodes, resistors, and capacitors. Each model is compared to the experimental data measured from an actual FFET.
    Keywords: Electronics and Electrical Engineering
    Type: Integrated Ferroelectrics; Mar 11, 2001; Colorado Springs, CO; United States
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    2D Quantum Transport Modeling in Nanoscale MOSFETs (2001)
    In:  Other Sources
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    Publication Date: 2019-07-17
    Description: With the onset of quantum confinement in the inversion layer in nanoscale MOSFETs, behavior of the resonant level inevitably determines all device characteristics. While most classical device simulators take quantization into account in some simplified manner, the important details of electrostatics are missing. Our work addresses this shortcoming and provides: (a) a framework to quantitatively explore device physics issues such as the source-drain and gate leakage currents, DIBL, and threshold voltage shift due to quantization, and b) a means of benchmarking quantum corrections to semiclassical models (such as density- gradient and quantum-corrected MEDICI). We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions, oxide tunneling and phase-breaking scattering are treated on equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. Quantum simulations are focused on MIT 25, 50 and 90 nm "well- tempered" MOSFETs and compared to classical and quantum corrected models. The important feature of quantum model is smaller slope of Id-Vg curve and consequently higher threshold voltage. These results are quantitatively consistent with I D Schroedinger-Poisson calculations. The effect of gate length on gate-oxide leakage and sub-threshold current has been studied. The shorter gate length device has an order of magnitude smaller current at zero gate bias than the longer gate length device without a significant trade-off in on-current. This should be a device design consideration.
    Keywords: Electronics and Electrical Engineering
    Type: Jan 01, 2001; Potsdam, NY; United States
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    NASA Ames Research Center 60 MW Power Supply Modernization (2001)
    In:  Other Sources
    Details
    Publication Date: 2019-07-17
    Description: The NASA Ames Research Center 60 MW DC Power Supply was built in 1974 to provide controlled DC power for the Thermophysics Facility Arc Jet Laboratory. The Power Supply has gradually losing reliability due to outdated technology and component life limitation. NASA has decided to upgrade the existing rectifier modules with contemporary high-power electronics and control equipment. NASA plans to complete this project in 2001. This project includes a complete replacement of obsolete thyristor stacks in all six rectifier modules and rectifier bridge control system. High power water-cooled thyristors and freewheeling diodes will be used. The rating of each of the six modules will be 4000 A at 5500 V. The control firing angle signal will be sent from the Facility Control System to six modules via fiberoptic cable. The Power Supply control and monitoring system will include a Master PLC in the Facility building and a Slave PLC in each rectifier module. This system will also monitor each thyristor level in each stack and the auxiliary equipment.
    Keywords: Electronics and Electrical Engineering
    Format: text
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    Flightweight Electro-Magnet Systems (2001)
    In:  Other Sources
    Details
    Publication Date: 2019-07-17
    Description: NASA has a need for lightweight high performance magnets to be used in propulsion systems involving plasmas. We report the design, construction, and testing of a six inch diameter by twelve inch long solenoid using high purity aluminum wire operating at a temperature of 77 Kelvin (K) for the current carrying element. High purity aluminum is the material of choice because of three properties that make it optimal for magnetic construction. At 77 K high purity aluminum has one of the lowest resistivities at 77 K of any metal (p = 0.254 muOMEGA-cm), thus reducing the power requirements for creating magnetic fields. Aluminum is a low-density (2.6989 g/cc) material and the end product magnet will be of low total mass compared to similar designs involving copper or other elements. The magneto-resistance of aluminum saturates at low magnetic fields and does not increase indefinitely as is the case in copper. The magnet consists of four layers of closely wound wire and is approximately 150 mm in diameter by 300 mm long. A cylinder made from G - 10 was machined with a spiral groove to hold the high purity Al wire and the wire wound on it. Following the winding, each layer was potted in STYCAST high thermal conductivity epoxy to provide insulation between the turns of the coil and mechanical strength. The magneto-resistance of the coil has been measured at the National High Magnetic Field Laboratory (NHMFL), Tallahassee, FL in externally applied fields to 10 tesla. Following these tests it was energized to the full 2 tesla field it can produce using the facilities of the NHMFL at the Los Alamos National Laboratory. The results of all of these tests will be presented.
    Keywords: Electronics and Electrical Engineering
    Type: 27th International Electric Propulsion Conference; Oct 01, 2001; Pasadena, CA; United States
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    Coupling between Microstrip Lines Embedded in Polyimide Layers for 3D-MMICs on Si (2001)
    In:  CASI
    Details
    Publication Date: 2019-07-13
    Description: Three-dimensional circuits built upon multiple layers of polyimide are required for constructing SilSiGe monolithic microwavdmillimeter-wave integrated circuits on CMOS (low resistivity) Si wafers. However, the closely spaced transmission lines are susceptible to high levels of coupling, which degrades circuit performance. In this paper, Finite Difference Time Domain (FDTD) analysis and measured characteristics of novel shielding structures that significantly reduce coupling between embedded microstrip lines are presented. A discussion of the electric and magnetic field distributions for the coupled microstrip lines is presented to provide a physical rationale for the presented results.
    Keywords: Electronics and Electrical Engineering
    Type: IEE MTT-S International Microwave Symposium; May 20, 2001 - May 25, 2001; Phoenix, AZ; United States
    Format: application/pdf
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    Power System Electronics Accommodation for a Lithium Ion Battery on the Space Technology 5 (ST5) Mission (2001)
    In:  CASI
    Details
    Publication Date: 2019-07-13
    Description: ST5 mission requirements include validation of Lithium-ion battery in orbit. Accommodation in the power system for Li-ion battery can be reduced with smaller amp-hour size, highly matched cells when compared to the larger amp-hour size approach. Result can be lower system mass and increased reliability.
    Keywords: Electronics and Electrical Engineering
    Type: Space Power Workshop 2001; Apr 02, 2001 - Apr 05, 2001; Redondo Beach, CA; United States
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    Low Temperature Performance of High Power Density DC/DC Converter Modules (2001)
    In:  CASI
    Details
    Publication Date: 2019-07-13
    Description: In this paper, two second-generation high power density DC/DC converter modules have been evaluated at low operating temperatures. The power rating of one converter (Module 1) was specified at 150 W with an input voltage range of 36 to 75 V and output voltage of 12 V. The other converter (Module 2) was specified at 100 W with the same input voltage range and an output voltage of 3.3 V. The converter modules were evaluated in terms of their performance as a function of operating temperature in the range of 25 to -140 C. The experimental procedures along with the experimental data obtained are presented and discussed in this paper.
    Keywords: Electronics and Electrical Engineering
    Type: NASA/TM-2001-210973 , E-12827 , NAS 1.15:210973 , IECEC2001-AT-16 , 36th Intersociety Energy Conversion Engineering Conference; Jul 29, 2001 - Aug 02, 2001; Savannah, GA; United States
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    Novel Low Loss Wide-Band Multi-Port Integrated Circuit Technology for RF/Microwave Applications (2001)
    In:  CASI
    Details
    Publication Date: 2019-07-13
    Description: In this paper, novel low loss, wide-band coplanar stripline technology for radio frequency (RF)/microwave integrated circuits is demonstrated on high resistivity silicon wafer. In particular, the fabrication process for the deposition of spin-on-glass (SOG) as a dielectric layer, the etching of microvias for the vertical interconnects, the design methodology for the multiport circuits and their measured/simulated characteristics are graphically illustrated. The study shows that circuits with very low loss, large bandwidth, and compact size are feasible using this technology. This multilayer planar technology has potential to significantly enhance RF/microwave IC performance when combined with semi-conductor devices and microelectromechanical systems (MEMS).
    Keywords: Electronics and Electrical Engineering
    Type: NASA/CR-2001-209679 , E-12024-2 , NAS 1.26:209679 , 2001 Topical Meeting on Silicon Momolithic Integrated Circuits in RF Systems; Sep 12, 2001 - Sep 14, 2001; Ann Arbor, MI; United States
    Format: application/pdf
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