Publication Date:
2019
Description:
〈p〉Publication date: 1 December 2019〈/p〉
〈p〉〈b〉Source:〈/b〉 Applied Surface Science, Volume 496〈/p〉
〈p〉Author(s): Kyung Pyo Hong, Kyu Hyun Lee, Jungtae Nam, Kyoung Soo Kim, Sung Hee Kim, Boram Kim, Kisoo Kim, Jin Sung Park, Jun Young Lee, Taehwan Jeong, Young Jae Song, Jun Yeon Hwang, Jae Boong Choi, Seungmin Cho, Keun Soo Kim, Hyeongkeun Kim〈/p〉
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〈h5〉Abstract〈/h5〉
〈div〉〈p〉The present study investigates the atomic layer deposition (ALD) of an Al〈sub〉2〈/sub〉O〈sub〉3〈/sub〉 film on graphene atop copper with water vapor (H〈sub〉2〈/sub〉O), oxygen plasma (O〈sub〉2〈/sub〉 plasma) and ozone (O〈sub〉3〈/sub〉) serving as oxidants. With water vapor as an oxidant, surface-sensitive deposition results in significant differences in growth on single layer graphene (SLG) and multilayer graphene (MLG). Al〈sub〉2〈/sub〉O〈sub〉3〈/sub〉 completely covers areas of SLG, while virtually no Al〈sub〉2〈/sub〉O〈sub〉3〈/sub〉 is deposited on areas of MLG. The MLG areas are removed by O〈sub〉2〈/sub〉 plasma, and exposed copper areas are oxidized. Information about MLG, including the location, size, and density, can be determined by employing optical microscopy. Scanning electron microscopy (SEM), Raman spectroscopy, transmission electron microscopy (TEM), and X-ray photoelectron spectroscopy (XPS) are used to confirm the validity of the surface-selective deposition of Al〈sub〉2〈/sub〉O〈sub〉3〈/sub〉 on graphene grown on copper. We developed a process to distinguish SLG and MLG on copper. The characterization results were fed back to the synthesis conditions, and we confirmed that high-quality SLG can be grown on copper almost devoid of MLG. This characterization technique is suitable for large-area graphene (up to meter scale graphene), and can be utilized as feedback for growth and process conditions to ensure high-quality graphene.〈/p〉〈/div〉
〈/div〉
〈div xml:lang="en"〉
〈h5〉Graphical abstract〈/h5〉
〈div〉〈p〉〈figure〉〈img src="https://ars.els-cdn.com/content/image/1-s2.0-S0169433219324110-ga1.jpg" width="380" alt="Unlabelled Image" title="Unlabelled Image"〉〈/figure〉〈/p〉〈/div〉
〈/div〉
Print ISSN:
0169-4332
Electronic ISSN:
1873-5584
Topics:
Physics
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