Injection electroluminescence at p-n junctions in zinc-doped gallium phosphide

doi:10.1016/0022-3697(62)90145-2

Journal of Physics and Chemistry of Solids

Volume 23, Issue 7, July 1962, Pages 881-884

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Abstract

Gallium phosphide crystals doped with zinc, oxygen, or oxygen and zinc have been grown from gallium solution. Alloyed p-n junction diodes were made from them and injection electroluminescence was observed. Zinc doping gives green light, zinc plus oxygen gives red, while oxygen alone gives no visible electroluminescence. These results are compared with those of other workers and their significance is discussed.

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Injection electroluminescence at p-n junctions in zinc-doped gallium phosphide

Abstract

J. Electron.

Phys. Rev.

Halbleiter und Phosphore

Phys. Rev.

Nature, Lond.