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1 Erratum to: Appl. Phys. A (2016) 122:613 DOI 10.1007/s00339-016-0133-5
The original version of this article unfortunately contained a mistake. The presentation of Figs. 5 and 6 was incorrect. The correct Figs. 5 and 6 are given here.
Gate leakage current densities (J G) as a function of absolute value of the gate electric field (E G) of MILC and SILC-BGPS TFTs
Proano plot and grain boundary trap-state densities of MILC and SILC-BGPS TFTs
The original article was corrected.
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The online version of the original article can be found under doi:10.1007/s00339-016-0133-5.
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Lee, S.K., Seok, K.H., Park, J.H. et al. Erratum to: Progress of p-channel bottom-gate poly-Si thin-film transistor by nickel silicide seed-induced lateral crystallization. Appl. Phys. A 122, 657 (2016). https://doi.org/10.1007/s00339-016-0176-7
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DOI: https://doi.org/10.1007/s00339-016-0176-7