Enhancement of Mobility in Pseudomorphic FET's with Up and Down Monolayers

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Copyright (c) 1992 The Japan Society of Applied Physics
, , Citation Herb Goronkin et al 1992 Jpn. J. Appl. Phys. 31 2071 DOI 10.1143/JJAP.31.2071

1347-4065/31/7R/2071

Abstract

We have used molecular beam epitaxy (MBE) to grow single molecular layers (monolayers) in quantum wells in order to improve electron transport. The quantum well energy levels, wave functions, and the carrier concentrations are obtained by self-consistently solving the Schrödinger and Poisson equations. Photoluminescence (PL) and Hall measurements confirmed the energy level shifts and the mobility enhancement due to the monolayer insertions.

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10.1143/JJAP.31.2071