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Title:
X-ray diffraction study of defect distribution in Czochralski grown silicon highly doped by As
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Journal of Physics D-Applied Physics [0022-3727] Kyutt, R N yr:2005
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author:
Kyutt, R N
Shulpina, I L
Mosina, G N
Ratnikov, V V
Sorokin, L M
Scheglov, M P
Ruvimov, S S
Kearns, J
Todt, V
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author:
Kyutt, R N
Shulpina, I L
Mosina, G N
Ratnikov, V V
Sorokin, L M
Scheglov, M P
Ruvimov, S S
Kearns, J
Todt, V
last name
initials
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author:
Kyutt, R N
Shulpina, I L
Mosina, G N
Ratnikov, V V
Sorokin, L M
Scheglov, M P
Ruvimov, S S
Kearns, J
Todt, V
last name
initials
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