Abstract
We have fabricated ECL devices such as ring oscillators and a 1/16 divider to evaluate the performance of a vertically isolated self-aligned transistor which is named VIST. This VIST has a bird's beak-free oxide isolation and an inactive base of high impurity concentration formed extremely near the emitter region. Moreover, all the side walls of emitter, base and collector are covered with oxide film. Using VIST, propagation delay time of 160 psec was achieved in an ECL ring oscillator. The ECL divider operated at frequencies up to 2.5 GHz with 21 mW power dissipation per stage. This operating frequency is the highest value ever reported of silicon dividers.