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Title: Quantification of germanium and boron in heterostructures Si/Si1−xGex/Si by SIMS
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Thin Solid Films [0040-6090] Prudon, G yr:1997


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Users interested in this article also expressed an interest in the following:
1. Dubois, C. "Quantitative SIMS measurement of high concentration of boron in silicon (up to 20 at.%) using an isotopic comparative method." Applied surface science 255.4 (2008): 1377-1380. Link to SFX for this item
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