Language
English
German
^M
Dutch
Spanish
Title:
Oxygen deficiency and Sn doping of amorphous Ga2O3
Source:
Applied Physics Letters [0003-6951] yr:2016
Basic
Full text
Full text available via
AIP Journals (American Institute of Physics)
Year:
Volume:
Issue:
Start Page:
Document delivery
Request document via
Library/Bibliothek
Users interested in this article also expressed an interest in the following:
description
1.
Grandjean, M..
"High electron mobility lattice-matched AlInN/GaN field-effect transistor heterostructures."
Applied physics letters
89.6 (2006): 62106-1.
description
2.
Yang, L.
"Improved Negative Differential Mobility Model of GaN and AlGaN for a Terahertz Gunn Diode."
I.E.E.E. transactions on electron devices
58.4 (2011): 1076-1083.
description
3.
Sun, H.
"100-nm-Gate (Al,In)N/GaN HEMTs Grown on SiC With F-T=144 GHz."
IEEE electron device letters
31.4 (2010): 293-295.
description
4.
KHAN, M.
"METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR BASED ON SINGLE-CRYSTAL GAN."
Applied physics letters
62.15 (1993): 1786-1787.
description
5.
Carcia, P.
"Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering."
Applied physics letters
82.7 (2003): 1117-1119.
description
6.
di Forte-Poisson, MA A.
"III-Nitrides semiconductor compounds for microwave devices."
Physica status solidi. A, Applied research
203.1 (2006): 185-193.
description
7.
Fortunato, E.
"Fully transparent ZnO thin-film transistor produced at room temperature."
Advanced materials
17.5 (2005): 590-594.
description
8.
Nomura, K.
"Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors."
Nature
432.7016 (2004): 488-492.
description
9.
Arabshahi, H.
"Hot Electron Transport Properties in Characteristics of Wurtzite GaN MESFETs Using a Five-valley Model."
Brazilian journal of physics
40.3 (2010): 267-272.
description
10.
Leach, J.
"Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates."
Applied physics letters
96.10 (2010): 102109-102109.
description
11.
Miao, Z L.
"Strain effects on InxAl1-xN crystalline quality grown on GaN templates by metalorganic chemical vapor deposition."
Journal of applied physics
107.4 (2010): 43515-43515.
description
12.
Lin, Z.
"Ti/Al/Ni/Au Ohmic contacts for AlInN/AlN/GaN-based heterojunction field-effect transistors."
Journal of applied physics
107.1 (2010): 14508-14508.
description
13.
Sarazin, N.
"AlInN/AlN/GaN HEMT technology on SiC with 10-W/mm and 50% PAE at 10 GHz."
IEEE electron device letters
31.1 (2010): 11-13.
description
14.
Ostermaier, C.
"Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation."
IEEE electron device letters
30.10 (2009): 1030-1032.
description
15.
Khan, D. T. A.
"High electron mobility transistor based on a GaN-Al (x) Ga (1-x) N heterojunction."
Applied physics letters
63.9 (1993): 1214-1215.
description
16.
Christmann, G.
"Impact of disorder on high quality factor III-V nitride microcavities."
Applied physics letters
89.26 (2006): 261101-.
description
17.
Lin, ME.
"Low resistance ohmic contacts on wide band-gap GaN."
Applied physics letters
64.8 (1994): 1003-1005.
description
18.
Leszczynski, M.
"Lattice parameters of gallium nitride."
Applied physics letters
69.1 (1996): 73-75.
description
19.
Mohammad, S.
"Emerging gallium nitride based devices."
Proceedings of the IEEE
83.10 (1995): 1306-1355.
description
20.
Ducatteau, D.
"Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate."
IEEE electron device letters
27.1 (2006): 7-9.
View More...
View Less...
Select All
Clear All
Save Citations
Select Format
ProCite
Reference Manager
RefWorks
EndNote
Submit citation export
Advanced
Author
Other articles by this author? -- in
GeoRef
Other articles by this author? -- in
Online Contents Geosciences
Other articles by this author? -- using
Web of Science
Web Search
Find related information in
a Web Search Engine
Excite
Google
HotBot
Ixquick
ZOO
Ask
Yahoo!
Bing
Naver
Search Terms:
Search for related information in
Google Scholar
Article Title
Author Name
Journal Title
Other Search
Search Terms:
A service provided by the
Library of the Wissenschaftspark Albert Einstein
, Potsdam, Germany.
© 2005 SFX by Ex Libris Inc.