ExLibris header image
SFX Logo
Title: Oxygen deficiency and Sn doping of amorphous Ga2O3
Source:

Applied Physics Letters [0003-6951] yr:2016


Collapse list of basic services Basic
Full text
Full text available via AIP Journals (American Institute of Physics)
GO
Document delivery
Request document via Library/Bibliothek GO
Users interested in this article also expressed an interest in the following:
1. Grandjean, M.. "High electron mobility lattice-matched AlInN/GaN field-effect transistor heterostructures." Applied physics letters 89.6 (2006): 62106-1. Link to Full Text for this item Link to SFX for this item
2. Yang, L. "Improved Negative Differential Mobility Model of GaN and AlGaN for a Terahertz Gunn Diode." I.E.E.E. transactions on electron devices 58.4 (2011): 1076-1083. Link to SFX for this item
3. Sun, H. "100-nm-Gate (Al,In)N/GaN HEMTs Grown on SiC With F-T=144 GHz." IEEE electron device letters 31.4 (2010): 293-295. Link to Full Text for this item Link to SFX for this item
4. KHAN, M. "METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR BASED ON SINGLE-CRYSTAL GAN." Applied physics letters 62.15 (1993): 1786-1787. Link to Full Text for this item Link to SFX for this item
5. Carcia, P. "Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering." Applied physics letters 82.7 (2003): 1117-1119. Link to Full Text for this item Link to SFX for this item
6. di Forte-Poisson, MA A. "III-Nitrides semiconductor compounds for microwave devices." Physica status solidi. A, Applied research 203.1 (2006): 185-193. Link to Full Text for this item Link to SFX for this item
7. Fortunato, E. "Fully transparent ZnO thin-film transistor produced at room temperature." Advanced materials 17.5 (2005): 590-594. Link to Full Text for this item Link to SFX for this item
8. Nomura, K. "Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors." Nature 432.7016 (2004): 488-492. Link to Full Text for this item Link to SFX for this item
9. Arabshahi, H. "Hot Electron Transport Properties in Characteristics of Wurtzite GaN MESFETs Using a Five-valley Model." Brazilian journal of physics 40.3 (2010): 267-272. Link to SFX for this item
10. Leach, J. "Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates." Applied physics letters 96.10 (2010): 102109-102109. Link to Full Text for this item Link to SFX for this item
11. Miao, Z L. "Strain effects on InxAl1-xN crystalline quality grown on GaN templates by metalorganic chemical vapor deposition." Journal of applied physics 107.4 (2010): 43515-43515. Link to SFX for this item
12. Lin, Z. "Ti/Al/Ni/Au Ohmic contacts for AlInN/AlN/GaN-based heterojunction field-effect transistors." Journal of applied physics 107.1 (2010): 14508-14508. Link to SFX for this item
13. Sarazin, N. "AlInN/AlN/GaN HEMT technology on SiC with 10-W/mm and 50% PAE at 10 GHz." IEEE electron device letters 31.1 (2010): 11-13. Link to Full Text for this item Link to SFX for this item
14. Ostermaier, C. "Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation." IEEE electron device letters 30.10 (2009): 1030-1032. Link to Full Text for this item Link to SFX for this item
15. Khan, D. T. A. "High electron mobility transistor based on a GaN-Al (x) Ga (1-x) N heterojunction." Applied physics letters 63.9 (1993): 1214-1215. Link to Full Text for this item Link to SFX for this item
16. Christmann, G. "Impact of disorder on high quality factor III-V nitride microcavities." Applied physics letters 89.26 (2006): 261101-. Link to Full Text for this item Link to SFX for this item
17. Lin, ME. "Low resistance ohmic contacts on wide band-gap GaN." Applied physics letters 64.8 (1994): 1003-1005. Link to Full Text for this item Link to SFX for this item
18. Leszczynski, M. "Lattice parameters of gallium nitride." Applied physics letters 69.1 (1996): 73-75. Link to Full Text for this item Link to SFX for this item
19. Mohammad, S. "Emerging gallium nitride based devices." Proceedings of the IEEE 83.10 (1995): 1306-1355. Link to SFX for this item
20. Ducatteau, D. "Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate." IEEE electron device letters 27.1 (2006): 7-9. Link to Full Text for this item Link to SFX for this item
View More...
View Less...
Select All Clear All

Expand list of advanced services Advanced