Anderson localization effects near the Mott metal-insulator transition

Helena Bragança, M. C. O. Aguiar, J. Vučičević, D. Tanasković, and V. Dobrosavljević
Phys. Rev. B 92, 125143 – Published 24 September 2015

Abstract

The interplay between Mott and Anderson routes to localization in disordered interacting systems gives rise to different transitions and transport regimes. Here, we investigate the phase diagram at finite temperatures using dynamical mean-field theory combined with typical medium theory, which is an effective theory of the Mott-Anderson metal-insulator transition. We mainly focus on the properties of the coexistence region associated with the Mott phase transition. For weak disorder, the coexistence region is found to be similar to that in the clean case. However, as we increase disorder, Anderson localization effects are responsible for shrinking the coexistence region, and at sufficiently strong disorder (approximately equal to twice the bare bandwidth) it drastically narrows, the critical temperature Tc abruptly goes to zero, and we observe a phase transition in the absence of a coexistence of the metallic and insulating phases. In this regime, the effects of interaction and disorder are found to be of comparable importance for charge localization.

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  • Received 15 July 2015

DOI:https://doi.org/10.1103/PhysRevB.92.125143

©2015 American Physical Society

Authors & Affiliations

Helena Bragança1, M. C. O. Aguiar1, J. Vučičević2, D. Tanasković2, and V. Dobrosavljević3

  • 1Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, MG, Brazil
  • 2Scientific Computing Laboratory, Institute of Physics Belgrade, University of Belgrade, Pregrevica 118, 11080 Belgrade, Serbia
  • 3Department of Physics and National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32306, USA

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Issue

Vol. 92, Iss. 12 — 15 September 2015

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