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Nonequilibrium electronic and phonon dynamics of Cu0.17Bi2Se3 investigated by core-level and valence-band time-resolved photoemission spectroscopy

T. Yamamoto, Y. Ishida, R. Yoshida, M. Okawa, K. Okazaki, T. Kanai, A. Kikkawa, Y. Taguchi, T. Kiss, K. Ishizaka, N. Ishii, J. Itatani, S. Watanabe, Y. Tokura, T. Saitoh, and S. Shin
Phys. Rev. B 92, 121106(R) – Published 10 September 2015
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    Abstract

    We have performed time-resolved (TR) core-level and valence-band angle-resolved (AR) photoemission spectroscopy (PES) to investigate ultrafast dynamics of an electron-doped topological insulator Cu0.17Bi2Se3. The Bi 5d5/2 line was composed of a single peak and exhibited broadening upon both heating and pumping, which we interpreted as a change of phonon temperature (Tp), in the surface region. The electronic dynamics and electron temperature (Te), on the other hand, were determined with near-EF TRARPES. The transient temperature deduced from core-level TRPES shows a similar behavior with Te deduced from near-EF TRARPES. This similar behavior of Tp and Te can be reproduced not by a simple two-temperature model but by a modified one, although we cannot exclude a possibility that core-level broadening also reflects Te.

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    • Received 26 September 2014
    • Revised 31 July 2015

    DOI:https://doi.org/10.1103/PhysRevB.92.121106

    ©2015 American Physical Society

    Authors & Affiliations

    T. Yamamoto1,2,*, Y. Ishida2, R. Yoshida2,†, M. Okawa1, K. Okazaki2, T. Kanai2, A. Kikkawa3, Y. Taguchi3, T. Kiss2,‡, K. Ishizaka2,§, N. Ishii2, J. Itatani2, S. Watanabe4, Y. Tokura3,5, T. Saitoh1,∥, and S. Shin2,6,¶

    • 1Department of Applied Physics, Tokyo University of Science, Katsushika, Tokyo 125-8585, Japan
    • 2Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan
    • 3RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama 351-0198, Japan
    • 4Research Institute for Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan
    • 5Department of Applied Physics, University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
    • 6CREST, Japan Science and Technology Agency, Chiyoda, Tokyo 102-0075, Japan

    • *t-yamamoto@issp.u-tokyo.ac.jp
    • †Present address: Research Institute for Electronic Science, Hokkaido University, Sapporo, Hokkaido 001-0021, Japan.
    • ‡Present address: Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan.
    • §Present address: Department of Applied Physics, University of Tokyo, Bunkyo, Tokyo 113-8656, Japan.
    • ∥t-saitoh@rs.kagu.tus.ac.jp
    • shin@issp.u-tokyo.ac.jp

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    Vol. 92, Iss. 12 — 15 September 2015

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