Dynamic conductivity scaling in photoexcited V2O3 thin films

Elsa Abreu, Siming Wang, Juan Gabriel Ramírez, Mengkun Liu, Jingdi Zhang, Kun Geng, Ivan K. Schuller, and Richard D. Averitt
Phys. Rev. B 92, 085130 – Published 18 August 2015
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Abstract

Optical-pump terahertz-probe spectroscopy is used to investigate ultrafast far-infrared conductivity dynamics during the insulator-to-metal transition in vanadium sesquioxide (V2O3). The resultant conductivity increase occurs on a tens of picosecond time scale, exhibiting a strong dependence on the initial temperature and fluence. We have identified a scaling of the conductivity dynamics upon renormalizing the time axis with a simple power law (α1/2) that depends solely on the initial, final, and conductivity onset temperatures. Qualitative and quantitative considerations indicate that the dynamics arise from nucleation and growth of the metallic phase which can be described by the Avrami model. We show that the temporal scaling arises from spatial scaling of the growth of the metallic volume fraction, highlighting the self-similar nature of the dynamics. Our results illustrate the important role played by mesoscopic effects in phase transition dynamics.

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  • Received 24 October 2014
  • Revised 5 February 2015

DOI:https://doi.org/10.1103/PhysRevB.92.085130

©2015 American Physical Society

Authors & Affiliations

Elsa Abreu1,*, Siming Wang2,3,4, Juan Gabriel Ramírez2,3, Mengkun Liu2,5, Jingdi Zhang1,2, Kun Geng1, Ivan K. Schuller2,3,4, and Richard D. Averitt1,2,†

  • 1Department of Physics, Boston University, Boston, Massachusetts 02215, USA
  • 2Department of Physics, The University of California at San Diego, La Jolla, California 92093, USA
  • 3Center for Advanced Nanoscience, The University of California at San Diego, La Jolla, California 92093, USA
  • 4Materials Science and Engineering Program, The University of California at San Diego, La Jolla, California 92093, USA
  • 5Department of Physics, Stony Brook University, Stony Brook, New York 11794, USA

  • *Present address: Institute for Quantum Electronics, Physics Department, ETH Zurich, 8093 Zurich, Switzerland;elsabreu@bu.edu
  • raveritt@ucsd.edu

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Issue

Vol. 92, Iss. 8 — 15 August 2015

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