Language
English
German
^M
Dutch
Spanish
Title:
Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates
Source:
Applied Physics Letters [0003-6951] yr:2014
Basic
Full text
Full text available via
AIP Journals (American Institute of Physics)
Year:
Volume:
Issue:
Start Page:
Document delivery
Request document via
Library/Bibliothek
Users interested in this article also expressed an interest in the following:
description
1.
Kawakami, Y.
"Optical gain characteristics in Al-rich AlGaN/AlN quantum wells."
Applied physics letters
104.18 (2014): 181102-.
description
2.
Guo, W.
"Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates."
Journal of applied physics
115.10 (2014): 103108-.
description
3.
Qi, M.
"Strained GaN quantum-well FETs on single crystal bulk AlN substrates."
Applied physics letters
110.6 (2017): 63501-.
description
4.
Detchprohm, Y.
"Optically pumped deep-ultraviolet AlGaN multi-quantum-well lasers grown by metalorganic chemical vapor deposition."
Proceedings of SPIE--the international society for optical engineering
2014. 90020-.
description
5.
Gong, Y P.
"Influence of high temperature AlN buffer on optical gain in AlGaN/AlGaN multiple quantum well structures."
Applied physics letters
99.17 (2011): 171912-171912.
Select All
Clear All
Save Citations
Select Format
ProCite
Reference Manager
RefWorks
EndNote
Submit citation export
Advanced
Author
Other articles by this author? -- in
GeoRef
Other articles by this author? -- in
Online Contents Geosciences
Other articles by this author? -- using
Web of Science
Web Search
Find related information in
a Web Search Engine
Excite
Google
HotBot
Ixquick
ZOO
Ask
Yahoo!
Bing
Naver
Search Terms:
Search for related information in
Google Scholar
Article Title
Author Name
Journal Title
Other Search
Search Terms:
A service provided by the
Library of the Wissenschaftspark Albert Einstein
, Potsdam, Germany.
© 2005 SFX by Ex Libris Inc.