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Temperature and pressure dependences of Zn-doped GaN

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Abstract

The electroluminescence spectrum of Zn-doped GaN is independent of uniaxial pressure up to kbars and of temperature in the range 100–300 K.

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References

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Author information

Authors and Affiliations

  1. RCA Laboratories, 08540, Princeton, NJ, USA

    J. I. Pankove

  2. Instituto de Física, Unicamp, Campinas, SP, Brasil

    F. C. Prince & N. B. Patel

Authors
  1. J. I. Pankove
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  2. F. C. Prince
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  3. N. B. Patel
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Additional information

This work was done during a one month visit by Dr. Pankove at UNICAMP, made possible through a grant from PNUD. Financial support from TELEBRAS and FAPESP is also acknowledged.

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Pankove, J.I., Prince, F.C. & Patel, N.B. Temperature and pressure dependences of Zn-doped GaN. Appl. Phys. 15, 113–114 (1978). https://doi.org/10.1007/BF00896901

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  • DOI: https://doi.org/10.1007/BF00896901

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