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Role of substrate temperature on structure and magnetization of Cr-implanted GaN thin film

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Abstract

Chromium ions implantation was performed into metal–organic chemical vapor deposition grown GaN thin film of thickness about 2 µm at 5 × 1016 cm−2 fluence. Implantation was performed at various substrate temperatures (RT, 250, 350 °C). Rapid thermal annealing was employed at 900 °C to remove implantation-induced damages as well as for activation of dopant. Structural study was performed by Rutherford backscattering and channeling spectrometry and high-resolution X-ray diffraction. To confirm magnetic properties at room temperature, hysteresis loops were obtained using alternating gradient magneto-meter. Well-defined hysteresis loops were achieved at 300 K in implanted and annealed samples. Temperature-dependent magnetization indicated magnetic moment at 5 K and retain up to 380 K.

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References

  1. A. Polyakov, N. Smirnov, A. Govorkov, S. Pearton, Appl. Phys. Lett. 83, 3314 (2003)

    Article  ADS  Google Scholar 

  2. R. Vaudo, X. Xu, A. Salant, J. Malcarne, G. Brandes, Phys. Status Solidi (a) 200(1), 18 (2003)

    Article  ADS  Google Scholar 

  3. S. Heikman, S. Keller, S. DenBaars, U. Mishra, Appl. Phys. Lett. 81, 439 (2002)

    Article  ADS  Google Scholar 

  4. S. Von Molnar, D. Read, J. Magn. Magn. Mater. 242, 13 (2002)

    Article  ADS  Google Scholar 

  5. S. Pearton, C. Abernathy, M. Overberg, G. Thaler, D. Norton, N. Theodoropoulou, A. Hebard, Y. Park, F. Ren, J. Kim, J. Appl. Phys. 93, 1 (2003)

    Article  ADS  Google Scholar 

  6. S. Pearton, C. Abernathy, D. Norton, A. Hebard, Y. Park, L. Boatner, J. Budai, Mater. Sci. Eng: R: Reports 40(4), 137 (2003)

    Article  Google Scholar 

  7. G. Thaler, M. Overberg, B. Gila, R. Frazier, C. Abernathy, S. Pearton, J. Lee, S. Lee, Y. Park, Z. Khim, Appl. Phys. Lett. 80, 3964 (2002)

    Article  ADS  Google Scholar 

  8. R. Korotkov, J. Gregie, B. Wessels, Appl. Phys. Lett. 80, 1731 (2002)

    Article  ADS  Google Scholar 

  9. T. Graf, M. Gjukic, M. Brandt, M. Stutzmann, O. Ambacher, Appl. Phys. Lett. 81, 5159 (2002)

    Article  ADS  Google Scholar 

  10. A. Hebard, R. Rairigh, J. Kelly, S. Pearton, C. Abernathy, S. Chu, R. Wilson, J. Phys. D, Appl. Phys. 37(4), 511 (2004)

    Article  ADS  Google Scholar 

  11. K. Sato, H. Katayama-Yoshida, Jpn. J. Appl Phys. Part 2, 40(5B), L485 (2001)

  12. M. Hashimoto, Y. Zhou, M. Kanamura, H. Asahi, Solid State Commun. 122(1–2), 37 (2002)

    Article  ADS  Google Scholar 

  13. A. Majid, R. Sharif, G. Husnain, A. Ali, J. Phys. D, Appl. Phys. 4, 1354012 (2009)

    Google Scholar 

  14. J. Ziegler, The stopping and range of ions in matter. http://www.srim.org/

  15. L.R. Doolittle, Nucl. Instrum. Methods B 9(3), 344 (1985)

    Article  ADS  Google Scholar 

  16. G. Husnain, S.-D. Yao, I. Ahmad, H.M. Rafique, J. Magn. Magn. Mater. 324, 797 (2012)

    Article  ADS  Google Scholar 

  17. G. Kioseoglou, A.T. Hanbicki, B. Jonker, Appl. Phys. Lett. 83, 2716 (2003)

    Article  ADS  Google Scholar 

  18. B.E. Warren, X-ray Diffraction (Dover, New York, 1990), p. 99

    Google Scholar 

  19. C. Liu, B. Mensching, K. Volz, Appl. Phys. Lett. 71, 2313 (1997)

    Article  ADS  Google Scholar 

  20. B.J. Pong, C.J. Pan, Y.C. Teng, G.C. Chi, W.H. Li, K.C. Lee, C.H. Lee, J. Appl. Phys. 83, 5992 (1998)

    Article  ADS  Google Scholar 

  21. Y. Cui, L. Li, Appl. Phys. Lett. 80, 4139 (2002)

    Article  ADS  Google Scholar 

  22. Y. Shi, Y.X. Zhang, C.Z. Jiang, D.J. Fu, X.J. Fan, Phys. B 388, 82 (2007)

    Article  ADS  Google Scholar 

  23. G. Husnain, S.-D. Yao, I. Ahmad, H.M. Rafique, Solid State Sci. 14, 2340 (2012)

    Article  Google Scholar 

  24. J. Hwang, Y. Ishida, M. Kobayashi, H. Hirata, K. Takubo, T. Mizokawa, A. Fujimori, J. Okamoto, K. Mamiya, Y. Saito, Phys. Rev. B 72(8), 85216 (2005)

    Article  ADS  Google Scholar 

  25. L.M. Xu, Y.P. Yu, X.J. Xing, X.Y. Wu, S.W. Li, Appl. Phys. A 92(2), 361 (2008)

    Article  ADS  Google Scholar 

  26. Tomasz. Dietl, J. Appl. Phys. 103, 07D111 (2008)

    Article  Google Scholar 

Download references

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Authors and Affiliations

  1. State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing, 100871, China

    G. Husnain, Yao Shu-De & Li Lin

  2. Experimental Physics Lab, National Centre for Physics, Quaid-I-Azam University, Islamabad, 45320, Pakistan

    G. Husnain & Ishaq Ahmad

  3. Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 51 01 19, 01314, Dresden, Germany

    Li Lin

Authors
  1. G. Husnain
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  2. Yao Shu-De
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Correspondence to G. Husnain.

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Husnain, G., Shu-De, Y., Ahmad, I. et al. Role of substrate temperature on structure and magnetization of Cr-implanted GaN thin film. Appl. Phys. A 117, 2275–2279 (2014). https://doi.org/10.1007/s00339-014-8658-y

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  • DOI: https://doi.org/10.1007/s00339-014-8658-y

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