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Defect-Free Planarization of 4H–SiC(0001) Substrate Using Reference Plate

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Published 18 January 2008 • Copyright (c) 2008 The Japan Society of Applied Physics
, , Citation Keita Yagi et al 2008 Jpn. J. Appl. Phys. 47 104 DOI 10.1143/JJAP.47.104

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1 Research Center for Ultra-Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan

2 Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan

3 Department of Mechanical Engineering and Materials Science, Kumamoto University, 2-39-1 Kurokami, Kumamoto 860-8555, Japan

Dates

  1. Received 22 July 2007
  2. Accepted 16 October 2007
  3. Published

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1347-4065/47/1R/104

Abstract

In this paper, a new defect-free planarization technique for 4H–SiC(0001) substrate is described. This technique uses hydroxyl radicals (OH radicals) that are generated on an Fe metal surface in a hydrogen peroxide (H2O2) solution. First, the oxidation of a 4H–SiC substrate by OH radicals is investigated by X-ray photoelectron spectroscopy (XPS) analysis. Next, the planarization of the 4H–SiC substrate is conducted. A very flat and smooth surface without any scratches and etch pits is obtained. The planarized surface has a step-terrace structure.

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10.1143/JJAP.47.104