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Title: Molecular beam epitaxial growth of strained layers on graded for Pt silicide Schottky diodes
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Semiconductor Science and Technology [0268-1242] Dentel, D yr:1998


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1. Tomforde, J. "The influence of Se doping upon the phase change characteristics of GeSb/sub 2/Te/sub 4/." Solid state sciences 11.3 (2009): 683-687. Link to SFX for this item
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