Excitability of a Semiconductor Laser by a Two-Mode Homoclinic Bifurcation

H. J. Wünsche; O. Brox; M. Radziunas; F. Henneberger

doi:10.1103/PhysRevLett.88.023901

Excitability of a Semiconductor Laser by a Two-Mode Homoclinic Bifurcation

H. J. Wünsche, O. Brox, M. Radziunas, and F. Henneberger

Phys. Rev. Lett. 88, 023901 – Published 21 December 2001

Abstract

We report on the preparation of optical excitability in a distributed feedback semiconductor laser. The device integrates a single-mode laser and a $250 μ m$ long passive section with cleaved facet. The phase of the light fed back from the passive section is tunable by current. The theoretical analysis shows an ultimate hop between external cavity modes within every phase cycle that is associated with a two-mode homoclinic bifurcation close to which the system becomes excitable. This excitability is clearly demonstrated in the experimental response to optical injection comparing well with simulation calculations.

Received 14 May 2001

DOI:https://doi.org/10.1103/PhysRevLett.88.023901

Authors & Affiliations

H. J. Wünsche¹, O. Brox², M. Radziunas^1,3, and F. Henneberger¹

¹Humboldt-Universität zu Berlin, Institut für Physik, Invalidenstrasse 110, D-10115 Berlin, Germany
²Heinrich-Hertz-Institut für Nachrichtentechnik Berlin, Einsteinufer 37, D-10587 Berlin, Germany
³Weierstraß-Insitut für Angewandte Analysis und Stochastik Berlin, Mohrenstrasse 39, D-10117, Berlin, Germany