Induced Magnetization Density and <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mi>f</mi><mo>−</mo><mi>d</mi></math></span> Bonding in U<span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><msub><mrow><mi mathvariant="normal">Ge</mi></mrow><mrow><mn>3</mn></mrow></msub></mrow></math></span>

G. H. Lander; J. F. Reddy; A. Delapalme; P. J. Brown

doi:10.1103/PhysRevLett.44.603

Induced Magnetization Density and $f - d$ Bonding in U ${Ge}_{3}$

G. H. Lander, J. F. Reddy, A. Delapalme, and P. J. Brown

Phys. Rev. Lett. 44, 603 – Published 3 March 1980

Abstract

A polarized- neutron study of the compound U ${Ge}_{3}$ has revealed that the susceptibility at the Ge atom is paramagnetic and highly aspherical. A fit to experiment has been obtained with a single $4 d_{z^{2}}$ orbital at the Ge site. Such an effect probably arises from charge transfer from U to Ge and strong hybridization with the unoccupied Ge $4 d$ states.