Abstract
First-principles calculations of electronic energies of hydrogenated amorphous silicon have been performed for a series of realistic structural models in which hydrogen appears as SiH, Si, Si, , and SiHHSi (a broken Si-Si with two H atoms). Whereas all these models are consistent with photoemission experiment (less so for Si), only the last two are found to give band-gap states. The broken-band model is in good agreement with several sets of experiments.
- Received 31 October 1978
DOI:https://doi.org/10.1103/PhysRevLett.42.805
©1979 American Physical Society