Advanced Coherent X-Ray Diffraction and Electron Microscopy of Individual $\mathrm{In}\mathrm{P}$ Nanocrystals on $\mathrm{Si}$ Nanotips for III-V-on-$\mathrm{Si}$ Electronics and Optoelectronics

Advanced Coherent X-Ray Diffraction and Electron Microscopy of Individual $In P$ Nanocrystals on $Si$ Nanotips for III-V-on- $Si$ Electronics and Optoelectronics

Gang Niu, Steven John Leake, Oliver Skibitzki, Tore Niermann, Jerome Carnis, Felix Kießling, Fariba Hatami, Emad Hameed Hussein, Markus Andreas Schubert, Peter Zaumseil, Giovanni Capellini, William Ted Masselink, Wei Ren, Zuo-Guang Ye, Michael Lehmann, Tobias Schülli, Thomas Schroeder, and Marie-Ingrid Richard

Phys. Rev. Applied 11, 064046 – Published 19 June 2019

Abstract

The nondestructive detection and evaluation of crystallographic properties of nanocrystals is of great significance for both fundamental physics research and further development of high-performance functional devices employing nanostructured materials. Synchrotron radiation-based CXD using a nanoscale x-ray beam is shown to be a powerful tool to explore the crystallographic properties of $In P$ nanocrystals (NCs) selectively grown on $Si$ nanotip wafers. CXD characterization clearly clarifies, with atomic sensitivity and without complex sample preparation, the crystallographic properties of the selected $In P$ NC such as the structure of the facets, the strain, the existence of defects (stacking faults and microtwins), and the size of the defected crystallites. Several selected $In P$ NCs explored by CXD reveal homogeneous structures. The CXD results are in good agreement with electron microscopy. These results not only confirm that nanoheteroepitaxy is a promising approach to monolithically integrate high-quality III-V compounds on silicon wafers, but also opens a pathway to nondestructively explore the crystallinity of materials on the nanometer scale, particularly in nano-electronic and nano-optoelectronic devices.

Received 8 March 2019
Revised 17 April 2019
Corrected 2 August 2019

DOI:https://doi.org/10.1103/PhysRevApplied.11.064046

Physics Subject Headings (PhySH)

Crystal structure Growth Nanocrystals Optoelectronics

Heterostructures Semiconductors

Coherent X-ray scattering Transmission electron microscopy

Condensed Matter, Materials & Applied Physics

Corrections

2 August 2019

Correction: Email addresses for additional corresponding authors were inadvertently deleted during the production cycle and have now been inserted.

Authors & Affiliations

Gang Niu^1,*, Steven John Leake^2,†, Oliver Skibitzki³, Tore Niermann⁴, Jerome Carnis^2,5, Felix Kießling⁴, Fariba Hatami⁶, Emad Hameed Hussein⁶, Markus Andreas Schubert³, Peter Zaumseil³, Giovanni Capellini^3,7, William Ted Masselink⁶, Wei Ren¹, Zuo-Guang Ye^1,8, Michael Lehmann⁴, Tobias Schülli², Thomas Schroeder^4,9,‡, and Marie-Ingrid Richard^2,5,§

¹Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
²ESRF – The European Synchrotron, 71 Avenue des Martyrs, 38000 Grenoble, France
³IHP-Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
⁴Technische Universität Berlin, Institut für Optik und Atomare Physik, Straße des 17. Juni 135, 10623 Berlin, Germany
⁵IM2NP UMR 7334, Aix Marseille Université, CNRS, Université de Toulon, F-13397 Marseille, France
⁶Institut für Physik, Mathematisch-Naturwissenschaftliche Fakultät, Humboldt Universtät zu Berlin, Newtonstrasse 15, 12489 Berlin, Germany
⁷Dipartimento di Scienze, Università Roma Tre, Viale Marconi 446, 00146 Rome, Italy
⁸Department of Chemistry and 4D LABS, Simon Fraser University, Burnaby, British Columbia V5A 1S6, Canada
⁹Brandenburgische Technische Universität, Konrad-Zuse-Strasse 1, 03046 Cottbus, Germany

^*gangniu@xjtu.edu.cn
^†steven.leake@esrf.fr
^‡thomas.schroeder@ikz-berlin.de
^§mrichard@esrf.fr

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Vol. 11, Iss. 6 — June 2019

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Figure 1
Global properties of $In P$ NCs on the $Si$ nanotips wafer. (a) A side-view SEM image (60° tilt from top view), which shows a cross section along the $Si$ [110] direction of the heterostructure as well. The darkest regions are $Si$ and the filling material between $Si$ nanotips is ${Si O}_{2}$ . The tip array square edge is along the $Si$ [100] direction and the tip-tip distance is 1.41 µm. (b) An enlarged SEM image in side-view (80° tilt from top view) of the sample in (a), showing eighteen $In P$ NCs. SR-GIXRD patterns of $In P$ NCs detected at BM32 beamline of ESRF (λ = 1.127 Å). (c) θ–2θ scan around the $Si$ (220) Bragg diffraction in-plane condition; the black dotted lines mark the (220) peak position of bulk $In P$ . (d) ω scan of $In P$ (220) diffraction peak with the x-ray incident angle α of 0.2°, showing a FWHM of 1.0°. The black arrows mark diffraction peaks related to $In P$ NCs relatively strongly twisted to the substrate.
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Figure 2
SEM and TEM images of a single $In P$ NC heterogeneously epitaxially grown on a $Si$ nanotip. SEM images of one selected $In P$ NC showing its detailed surface morphology: (a) top view; (b) 20° tilt from top view of the same $In P$ NC, named “Front”; (c) 40° tilt from top view of the same $In P$ NC, still at “Front”; (d) 40° tilt from top view of the same $In P$ NC with the $In P$ NC rotated nearly 180° in the plane, named “Back”. TEM images of another $In P$ NC: (e) a HRTEM cross-section image showing the crystalline feature of $In P$ with µTWs. The top $Pt$ layer is deposited before the FIB process to protect the $In P$ NC from detaching from the $Si$ nanotip. (f) A selected area electron diffraction pattern of the $In P / Si$ system. The $In P$ reflections indexed by A and B belong to different twin variants, the [111] direction is common. DF TEM images from reflections exclusive to the individual variants are shown in (g) and (h).
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Figure 3
(a) A schematic image of the CXD measurements configuration, in which FZP represents the Fresnel zone plate and OSA is the order sorting aperture. Left panel shows the SEM image of a selected $In P$ NC. (b) 3D diffraction pattern of the selected $In P$ NC shown in Fig. 2. The pattern displayed as a function of the reciprocal space coordinates (Q_x, Q_y and Q_z) in Angstroms and measured at the $In P$ (002) Bragg reflection. The arrows mark the fringes with a large period and the oval circles the bent streak. (c) Summed diffraction pattern displayed in the (Q_x,Q_y) plane. (d) 3D diffraction pattern of NC 2 measured at the $In P$ (002) Bragg reflection. (e) Summed diffraction pattern displayed in the (Q_y,Q_z) plane. (f) Isosurface of the out-of-plane displacement of the $In P$ particle (NC 2). Here, a twin domain of the particle has been reconstructed. The distance between two ticks corresponds to 50 nm.
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Figure 4
South (left) and north (right) CXD pole figures extracted from diffraction patterns at Q = 0.03 Å⁻¹ from the center of the Bragg peak from (a) NC 1 (b) NC 2, and (c) another crystal. The peaks corresponding to the {111}, {101}, and {100} facets are highlighted with black, blue, and green circles, respectively. All axes units are degrees.
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Advanced Coherent X-Ray Diffraction and Electron Microscopy of Individual InP Nanocrystals on Si Nanotips for III-V-on-Si Electronics and Optoelectronics

Phys. Rev. Applied 11, 064046 – Published 19 June 2019

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Advanced Coherent X-Ray Diffraction and Electron Microscopy of Individual $In P$ Nanocrystals on $Si$ Nanotips for III-V-on- $Si$ Electronics and Optoelectronics