We present photoluminescence measurements of self-assembled InP quantum dots on a GaAs surface (i.e., freestanding dots), under the influence of a high magnetic field. Reasonably sharp luminescence features are seen corresponding to the ground state, and several excited states. Magnetic-field-dependent measurements are presented and compared with calculations based on a finite-difference method using the envelope approximation. The calculations include a realistic pyramidal shape for the dots, as well as strain. We find good agreement between theory and experiments.

• Received 5 January 1998

DOI:https://doi.org/10.1103/PhysRevB.58.2026