Quantum tunneling through a rectangular barrier in multi-Weyl semimetals

Ying-Hua Deng, Hai-Feng Lü, Sha-Sha Ke, Yong Guo, and Huai-Wu Zhang
Phys. Rev. B 101, 085410 – Published 18 February 2020

Abstract

Multi-Weyl semimetals are new types of topological semimetals whose topological charge is equal to the value of the winding number J. Here, we investigate the single-particle ballistic scattering on a rectangular barrier in multi-Weyl semimetals. Because this system has a crystallographic anisotropy, the scattering properties depend on the mutual orientation of the crystalline axis and the barrier. For different J, the vertical component of the wave vector k and the corresponding probability current density j satisfies jk2J1. In the case of a barrier perpendicular to the z-axis, it is found that the reflectionless incident angles are determined by geometrical resonances between the barrier width and the de Broglie length of the scattered electrons in the barrier region. In the z-axis direction, the local minimum conductance Gmin occurs when the chemical potential equals the barrier height and Gmin1/L2/J, where L is the width of the barrier. Differently, in the case of a barrier perpendicular to the x-axis, the angular distribution of the transmission probability is no longer rotation invariant. For the double-Weyl semimetals (J=2), the transmission probability decreases rapidly to 0 as the barrier width L increases for a normal incidence, which is similar to conventional nonrelativistic electrons. It is interesting that perfect transmission is again found for normally incident Weyl fermions for the triple-Weyl semimetals (J=3). In this case, the tunneling indicates a property similar to that in the case of J=1.

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  • Received 28 July 2019
  • Accepted 22 January 2020

DOI:https://doi.org/10.1103/PhysRevB.101.085410

©2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Ying-Hua Deng1, Hai-Feng Lü1,2,*, Sha-Sha Ke1, Yong Guo2, and Huai-Wu Zhang1

  • 1School of Physics and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
  • 2Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China

  • *lvhf04@uestc.edu.cn

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Issue

Vol. 101, Iss. 8 — 15 February 2020

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