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Ideal type-II Weyl phonons in wurtzite CuI

Jian Liu, Wenjie Hou, En Wang, Shengjie Zhang, Jia-Tao Sun, and Sheng Meng
Phys. Rev. B 100, 081204(R) – Published 22 August 2019
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Abstract

Weyl materials exhibiting topologically nontrivial touching points in band dispersion pave the way to exotic transport phenomena and novel electronic devices. Here, we demonstrate the signature of an ideal type-II Weyl phase in phonon dispersion of solids through first-principles investigations. Type-II phononic Weyl phase is manifested in noncentrosymmetric wurtzite CuI by six pairs of Weyl points (WPs) in the kz=0.0 plane. On the iodine-terminated surface of the crystal, very clean surface arcs are readily detectable. Each pair of WPs connected by open surface arcs is well separated by a large distance of 0.26Å1. The opposite chirality of WPs with quantized Berry curvature produces Weyl phonon Hall effect, in analogy to valley Hall effect of electrons. Such ideal type-II Weyl phase is readily observable in experiment, providing a unique platform to study novel thermal transport properties distinct from type-I Weyl phase.

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  • Received 23 March 2019

DOI:https://doi.org/10.1103/PhysRevB.100.081204

©2019 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Jian Liu1,2,*, Wenjie Hou3,4,*, En Wang1,2, Shengjie Zhang1,2, Jia-Tao Sun1,2,6,†, and Sheng Meng1,2,5,‡

  • 1Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • 2School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
  • 3Fert Beijing Institute, BDBC, School of Microelectronics, Beihang University, Beijing 100191, China
  • 4Beihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao 266104, China
  • 5Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
  • 6School of Information and Electronics, Beijing Institute of Technology, Beijing 100081, China

  • *These authors contributed equally to this work.
  • jtsun@iphy.ac.cn
  • smeng@iphy.ac.cn

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Issue

Vol. 100, Iss. 8 — 15 August 2019

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