Language
English
German
^M
Dutch
Spanish
Title:
Misfit strain, relaxation, and band‐gap shift in GaxIn1−xP/InP epitaxial layers
Source:
Journal of Applied Physics [0021-8979] Bensaada, A yr:1994
Basic
Full text
Full text available via
AIP Digital Archive
Year:
Volume:
Issue:
Start Page:
Document delivery
Request document via
Library/Bibliothek
Users interested in this article also expressed an interest in the following:
description
1.
Liu, N.
"Alloy ordering in GaInP alloys: A cross-sectional scanning tunneling microscopy study."
Applied physics letters
73.14 (1998): 1979-1981.
description
2.
Ghosh, S.
"Conduction band offset in InAs/GaAs self-organized quantum dots measured by deep level transient spectroscopy."
Applied physics letters
76.18 (2000): 2571-2573.
description
3.
Seaford, M.
"Subnanometer analysis of molecular beam epitaxy grown ternary arsenides."
Journal of vacuum science & technology. B, Microelectronics and nanometer structures
15.4 (1997): 1274-1278.
description
4.
Ouattara, L.
"Stacked InAs quantum dots in InP studied by cross-sectional scanning tunnelling microscopy."
Nanotechnology
15.12 (2004): 1701-1707.
description
5.
Froyen, S.
"Polarization fields and band offsets in GaInP/GaAs and ordered/disordered GaInP superlattices."
Applied physics letters
68.20 (1996): 2852-2854.
description
6.
Naruse, N.
"Nanoscale-resolved near-infrared photoabsorption spectroscopy and imaging of individual gallium antimonide quantum dots."
Journal of vacuum science and technology. B, Nanotechnology & microelectronics
32.1 (2014): 11803-.
description
7.
HUANG, MC.
"VALENCE-BAND OFFSET AT INXGA1-XAS/GAAS HETEROJUNCTIONS UNDER DIFFERENT STRAIN CONDITIONS."
Solid state communications
95.2 (1995): 95-98.
description
8.
Yamakawa, I.
"Atomic-scale observation of interfacial roughness and As-P exchange in InGaAs/InP multiple quantum wells."
Applied physics letters
84.22 (2004): 4436-4438.
description
9.
Wei, S.
"Calculated natural band offsets of all II-VI and III-V semiconductors: chemical trends and the role of cation d orbitals."
Applied physics letters
72.16 (1998): 2011-2013.
description
10.
Vurgaftman, I.
"Band parameters for III-V compound semiconductors and their alloys."
Journal of applied physics
89.11 (2001): 5815-5875.
description
11.
Komeda, T.
"Cross-sectional scanning tunneling microscopy on cleaved Si(111): Observation of novel reconstruction and structural and electrical properties of MOS interface."
Japanese journal of applied physics. Supplement
35.6B (1996): 3724-3729.
View More...
View Less...
Select All
Clear All
Save Citations
Select Format
ProCite
Reference Manager
RefWorks
EndNote
Submit citation export
Advanced
Author
Other articles by this author? -- in
GeoRef
author:
Bensaada, A
Chennouf, A
Cochrane, R W
Graham, J T
Leonelli, R
Masut, R A
last name
initials
Other articles by this author? -- in
Online Contents Geosciences
author:
Bensaada, A
Chennouf, A
Cochrane, R W
Graham, J T
Leonelli, R
Masut, R A
last name
initials
Other articles by this author? -- using
Web of Science
author:
Bensaada, A
Chennouf, A
Cochrane, R W
Graham, J T
Leonelli, R
Masut, R A
last name
initials
Web Search
Find related information in
a Web Search Engine
Excite
Google
HotBot
Ixquick
ZOO
Ask
Yahoo!
Bing
Naver
Search Terms:
Search for related information in
Google Scholar
Article Title
Author Name
Journal Title
Other Search
Search Terms:
A service provided by the
Library of the Wissenschaftspark Albert Einstein
, Potsdam, Germany.
© 2005 SFX by Ex Libris Inc.