Language
English
German
^M
Dutch
Spanish
Title:
Low-frequency noise in GaN nanowire transistors
Source:
Journal of Applied Physics [0021-8979] Rumyantsev, S L yr:2008
Basic
Sorry, no full text available...
Please use the document delivery service (see below)
Holding information
Holdings in library search engine
ALBERT
Document delivery
Request document via
Library/Bibliothek
Users interested in this article also expressed an interest in the following:
description
1.
Fu, H S.
"Theory and experiments on surface 1/f noise."
IEEE transactions on electron devices
19.2 (1972): 273-.
description
2.
Chen, P.
"1/f noise of SnO2 nanowire transistors."
Applied physics letters
92.24 (2008): 243120-.
description
3.
Liu, Z.
"Analytical Modeling of High-Frequency Noise Including Temperature Effects in GaN HEMTs on High-Resistivity Si Substrates."
IEEE transactions on electron devices
57.7 (2010): 1485-1491.
description
4.
Song, S.
"Passivation effects on ZnO nanowire field effect transistors under oxygen, ambient, and vacuum environments."
Applied physics letters
92.26 (2008): 263109-.
description
5.
Hooge, FN.
"1/f noise."
Physica A
83.1 (1976): 14-23.
description
6.
Oh, H.
"Gas molecular adsorption and surface cleansing effects on the electrical properties in ZnO nanowire field effect transistors."
THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY
51.5 (2007): 1829-1834.
description
7.
HOOGE, F.
"EXPERIMENTAL STUDIES ON 1-F NOISE."
Reports on Progress in Physics
44.5 (1981): 479-532.
description
8.
HOOGE, FN.
"ON EXPRESSIONS FOR 1/F NOISE IN MOBILITY."
Physica. A
114.3 (1982): 391-392.
description
9.
Vandamme, L.
"On the origin of 1/f noise in mosfets."
Fluctuation and noise letters
7.3 (2007).
description
10.
Li, T.
"Requirements for low intermodulation distortion in GaN-AlxGa1-xN high electron mobility transistors: A model assessment."
I.E.E.E. transactions on electron devices
49.9 (2002): 1511-1518.
description
11.
Demirtas, S.
"High voltage degradation of GaN high electron mobility transistors on silicon substrate."
Microelectronics and reliability
50.6 (2010): 758-62.
description
12.
Binari, Steven C.
"Trapping effects and microwave power performance in AlGaN/GaN HEMTs."
IEEE transactions on electron devices
48.3 (2001): 465-71.
description
13.
Wu, Y.
"Very-high power density AlGaN/GaN HEMTs."
IEEE transactions on electron devices
48.3 (2001): 586-590.
description
14.
Chang, P.
"ZnO Nanowire Field-Effect Transistors."
IEEE transactions on electron devices
55.11 (2008): 2977-2987.
description
15.
Astumian, R. D.
"Making molecules into motors."
Scientific American
285.1 (2001): 56-64.
description
16.
Liao, Z.
"Surface effects on photoluminescence of single ZnO nanowires."
Physics letters. A
372.24 (2008): 4505-4509.
description
17.
Hooge, F.N. N.
"1/f noise sources."
IEEE transactions on electron devices
41.11 (1994): 1926-1935.
description
18.
Arulkumaran, S.
"Temperature dependence of gate–leakage current in AlGaN/GaN high-electron-mobility transistors."
Applied physics letters
82.20 (2003): 3110-3.
View More...
View Less...
Select All
Clear All
Save Citations
Select Format
EndNote
RefWorks
Reference Manager
ProCite
Submit citation export
Advanced
Author
Other articles by this author? -- in
GeoRef
author:
Rumyantsev, S L
Shur, M S
Levinshtein, M E
Motayed, A
Davydov, A V
last name
initials
Other articles by this author? -- in
Online Contents Geosciences
author:
Rumyantsev, S L
Shur, M S
Levinshtein, M E
Motayed, A
Davydov, A V
last name
initials
Other articles by this author? -- using
Web of Science
author:
Rumyantsev, S L
Shur, M S
Levinshtein, M E
Motayed, A
Davydov, A V
last name
initials
Web Search
Find related information in
a Web Search Engine
Excite
Google
HotBot
Ixquick
ZOO
Ask
Yahoo!
Bing
Naver
Search Terms:
Search for related information in
Google Scholar
Article Title
Author Name
Journal Title
Other Search
Search Terms:
A service provided by the
Library of the Wissenschaftspark Albert Einstein
, Potsdam, Germany.
© 2005 SFX by Ex Libris Inc.