SFX by Ex Libris Inc.

Title:	Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory
Source:	Applied Physics Letters [0003-6951] Tseng, Yi-Ting yr:2015

Basic

Full text

Full text available via AIP Journals (American Institute of Physics)

Year:

Volume:

Issue:

Start Page:

Document delivery

Request document via Library/Bibliothek

Users interested in this article also expressed an interest in the following:
description	1.	"Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH3 Treatment." IEEE electron device letters a publication of the IEEE Electron Devices Society. 36.11: 1138-1141.
description	2.	Sangwan, Vinod K. "Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2." Nature nanotechnology 10.5 (2015): 403-406.
description	3.	"Highly Stable Thin-Film Transistors Based on Indium Oxynitride Semiconductor." ACS applied materials & interfaces. 10.18: 15873-15879.
description	4.	"Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory." IEEE electron device letters a publication of the IEEE Electron Devices Society. 37.4: 408-411.
description	5.	Metzger, R. "Unimolecular Electronics." Chemical reviews 115.11 (2015): 5056-5115.
description	6.	Wood, Joshua D. "Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation." Nano letters 14.12 (2014): 6964-70.
description	7.	Kirikova, Marina N. "Layered memristive and memcapacitive switches for printable electronics." Nature Materials advance online publication.2 (2014): 199-204.
description	8.	Nam, H. "MoS2Transistors FabricatedviaPlasma-Assisted Nanoprinting of Few-Layer MoS2Flakes into Large-Area Arrays." ACS nano 7.7 (2013): 4294967295-5881.
description	9.	Wu, Y. "Three-Terminal Graphene Negative Differential Resistance Devices." ACS nano 6.3 (2012): 2610-2616.
description	10.	Moon, K. "Improved Conductance Linearity and Conductance Ratio of 1T2R Synapse Device for Neuromorphic Systems." IEEE Electron Device Letters 38.8 (2017): 1023-1026.
description	11.	"Complementary resistive switching behaviors evolved from bipolar TiN/HfO 2 /Pt device." Applied physics letters 108.5.
description	12.	Menzel, S. "Physics of the Switching Kinetics in Resistive Memories." Advanced functional materials 25.40 (2015): 6306-6325.
description	13.	Nuckolls, C. "Stereoelectronic switching in single-molecule junctions." Nature chemistry 7.3 (2015): 215-220.
description	14.	Fallahazad, B. "Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures." Nano letters 15.1 (2014): 4294967295-433.
description	15.	Kulish, V. "Adsorption of metal adatoms on single-layer phosphorene." PCCP. Physical chemistry chemical physics 17.2 (2014): 992-1000.
description	16.	Na J, Y. "Few-layer black phosphorus field-effect transistors with reduced current fluctuation." ACS nano 8.11 (2014): 11753-11762.
description	17.	Zhang, S. "Extraordinary Photoluminescence and Strong Temperature/Angle-Dependent Raman Responses in Few-Layer Phosphorene." ACS nano 8.9 (2014): 9590-9596.
description	18.	Koenig, Steven P. "Electric field effect in ultrathin black phosphorus." Applied physics letters 104.10 (2014): 103106-4.
description	19.	Zhang, Y. "Black phosphorus field-effect transistors." Nature nanotechnology 9.5 (2014): 372-7.
description	20.	Fortunato, E. "Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances." Advanced materials 24.22 (2012): 2945-2986.