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Title:	In situ pendeoepitaxy of GaN using heteroepitaxial AlGaN∕GaN cracks
Source:	Applied Physics Letters [0003-6951] Moon, Y T yr:2006

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description	4.	Beaumont, B. "Epitaxial lateral overgrowth of GaN." Physica status solidi. B, Basic research 227.1 (2001): 1-43.
description	5.	Huang, D. "Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy." Applied physics letters 78.26 (2001): 4145-7.
description	6.	Sagar, A. "Dislocation density reduction in GaN using porous SiN interlayers." Physica status solidi. A, Applied research 202.5 (2005): 722-726.
description	7.	Krost, A. "GaN-based optoelectronics on silicon substrates." Materials science & engineering. B, Solid-state materials for advanced technology 93.1-3 (2002): 77-84.
description	8.	Datta, R. "Growth and characterisation of GaN with reduced dislocation density." Superlattices and Microstructures 36.4 (2004): 393-401.
description	9.	Ryu, HY. "Evaluation of radiative efficiency in InGaN blue-violet laser-diode structures using electroluminescence characteristics." Applied physics letters 89.17 (2006): 171106-.
description	10.	Berger, C. "Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics." The journal of physical chemistry. B, Condensed matter, materials, surfaces, interfaces & biophysical 108.52 (2004): 19912-19916.
description	11.	Berger, C. "Electronic Confinement and Coherence in Patterned Epitaxial Graphene." Science 312.5777 (2006): 1191-1196.
description	12.	Emtsev, Konstantin V. "Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide." Nature materials 8.3 (2009): 203-207.
description	13.	Zhou, S.Y. Y. "Substrate-induced bandgap opening in epitaxial graphene." Nature materials 6.10 (2007): 770-775.
description	14.	Kim, Keun n. "Large-scale pattern growth of graphene films for stretchable transparent electrodes." Nature 457.7230 (2009): 706-710.
description	15.	Novoselov, S V S. "Two-dimensional gas of massless Dirac fermions in graphene." Nature 438.7065 (2005): 197-200.
description	16.	Zytkiewicz, Z. "Epitaxial lateral overgrowth of GaAs: Principle and growth mechanism." Crystal research and technology 1999. 573-582.
description	17.	Nagahama, S. "Characteristics of InGaN laser diodes in the pure blue region." Applied physics letters 79.13 (2001): 1948-50.
description	18.	Teichert, C. "Self-organization of nanostructures in semiconductor heteroepitaxy." Physics Reports 365.5 (2002): 335-432.
description	19.	Lang, T. "MOCVD growth of GaN islands by multistep nucleation layer technique." Journal of Crystal Growth 277.1-4 (2005): 64-71.
description	20.	Bergmann, Ralf B. "Crystalline Si thin-film solar cells: a review." Applied physics. A, Materials science & processing 69.2 (1999): 187-194.