ExLibris header image
SFX Logo
Title: Electroforming and endurance behavior of Al/Pr0.7Ca0.3MnO3/Pt devices
Source:

Applied Physics Letters [0003-6951] Liao, Zhaoliang yr:2011


Collapse list of basic services Basic
Full text
Full text available via AIP Journals (American Institute of Physics)
GO
Document delivery
Request document via Library/Bibliothek GO
Users interested in this article also expressed an interest in the following:
1. Lee, J. "Conduction Mechanism and Low Frequency Noise Analysis in Al/Pr0.7Ca0.3MnO3 for Bipolar Resistive Switching." Japanese journal of applied physics 50.1 (2011): 11501-. Link to SFX for this item
2. Lee, W. "Improved switching characteristics of perovskite oxide-based resistance random access memory by high-pressure oxygen annealing at low temperature." Physica status solidi. A, Applications and materials science 208.1 (2010): 202-5. Link to Full Text for this item Link to SFX for this item
3. Choi, S. "Fully room-temperature-fabricated TiN/TaOx/Pt nonvolatile memory devices." Physica status solidi. Rapid research letters 4.12 (2010): 359-361. Link to Full Text for this item Link to SFX for this item
4. Cho, S. "A Charge Trap Folded nand Flash Memory Device With Band-Gap-Engineered Storage Node." I.E.E.E. transactions on electron devices 58.2 (2010): 288-295. Link to SFX for this item
5. Kawahara, A. "An 8 Mb Multi-Layered Cross-Point ReRAM Macro With 443 MB/s Write Throughput." IEEE Journal of Solid-State Circuits 48.1 (2013): 178-85. Link to Full Text for this item Link to SFX for this item
6. Sugano, G. "Device size dependence of resistance switching performance in metal/manganite/metal trilayers." Materials science & engineering. B, Solid-state materials for advanced technology 173.1-3 (2010): 3-6. Link to SFX for this item
Select All Clear All

Expand list of advanced services Advanced