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Title:
Highly carbon‐dopedp‐type Ga0.5In0.5As and Ga0.5In0.5P by carbon tetrachloride in gas‐source molecular beam epitaxy
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Applied Physics Letters [0003-6951] Chin, T P yr:1991
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Chin, T P
Kirchner, P D
Woodall, J M
Tu, C W
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Kirchner, P D
Woodall, J M
Tu, C W
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Kirchner, P D
Woodall, J M
Tu, C W
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