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Title: Strained‐layer InGaAs‐GaAs‐AlGaAs graded‐index separate confinement heterostructure single quantum well lasers grown by molecular beam epitaxy
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Applied Physics Letters [0003-6951] Offsey, S D yr:1989


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1. Bassignana, I C. "Photoluminescence and double‐crystal x‐ray study of InGaAs/InP: Effect of mismatch strain on band gap." Journal of applied physics 65.11 (1989): 4299-4305. Link to Full Text for this item Link to SFX for this item
2. KUPHAL, E. "RELATION BETWEEN PHOTOLUMINESCENCE WAVELENGTH AND LATTICE MISMATCH IN METALORGANIC VAPOR-PHASE EPITAXY INGAAS/INP." Journal of applied physics 73.9 (1993): 4599-4604. Link to Full Text for this item Link to SFX for this item
3. REIHLEN, E. "MEASUREMENT OF THE FUNDAMENTAL-BAND GAPS OF A STRAINED GAINAS LAYER." Journal of applied physics 68.4 (1990): 1750-1756. Link to Full Text for this item Link to SFX for this item
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5. Kim, T J. "Pseudodielectric functions of InGaAs alloy films grown on InP." Applied physics letters 81.13 (2002): 2367-2369. Link to Full Text for this item Link to SFX for this item
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