ExLibris header image
SFX Logo
Title: Spectroscopic ellipsometry of germanium growth on hydrogen‐terminated silicon (111)
Source:

Applied Physics Letters [0003-6951] Barth, Michael yr:1996


Collapse list of basic services Basic
Full text
Full text available via AIP Digital Archive
GO
Full text available via AIP Journals (American Institute of Physics)
GO
Document delivery
Request document via Library/Bibliothek GO
Users interested in this article also expressed an interest in the following:
1. BEYER, W. "HIGH-QUALITY HYDROGENATED AMORPHOUS-GERMANIUM PREPARED BY THE HOT-WIRE TECHNIQUE." Applied physics letters 67.11 (1995): 1567-1569. Link to Full Text for this item Link to SFX for this item
2. Hu, Y. "Spectroscopic ellipsometric measurements of the dielectric function of germanium dioxide films on crystal germanium." Applied physics letters 61.9 (1992): 1098-100. Link to Full Text for this item Link to SFX for this item
3. DREVILLON, B. "INSITU STUDY OF THE GROWTH OF HYDROGENATED AMORPHOUS-SILICON BY INFRARED ELLIPSOMETRY." Applied physics letters 59.8 (1991): 950-952. Link to Full Text for this item Link to SFX for this item
4. Bellenger, F. "Extrinsic interface formation of HfO2 and Al2O3/GeOx gate stacks on Ge (100) substrates." Journal of applied physics 106.4 (2009): 44909-. Link to SFX for this item
5. RAO, B. "DIELECTRIC PROPERTIES OF GLASSES IN THE SYSTEMS BI2O3-CDO-SIO2, BI2O3-CDO-B2O3, AND BI2O3-CDO-GEO2 AND THEIR RELATION TO THE STRUCTURE OF GLASS." Journal of the American Ceramic Society 45.11 (1962): 555-563. Link to Full Text for this item Link to SFX for this item
6. Ng, T. "Minimization of germanium penetration, nanocrystal formation, charge storage, and retention in a trilayer memory structure with silicon nitride/hafnium dioxide stack as the tunnel dielectric." Applied physics letters 84.22 (2004): 4385-4387. Link to Full Text for this item Link to SFX for this item
7. SAITOH, T. "Optical characterization of very thin hydrogenated amorphous silicon films using spectroscopic ellipsometry." Japanese journal of applied physics. Pt. 1, Regular papers & short notes 30.11 B (1991): 1914-. Link to SFX for this item
8. FANG, M. "AN INSITU ELLIPSOMETRY STUDY OF AMORPHOUS-SILICON AMORPHOUS-GERMANIUM MULTILAYERS." Journal of applied physics 69.1 (1991): 13-18. Link to Full Text for this item Link to SFX for this item
9. Luo, C. "Junction and Device Characteristics of Gate-Last Ge p- and n-MOSFETs With ALD-Al2O3 Gate Dielectric." IEEE transactions on electron devices 56.8 (2009): 1681-1689. Link to SFX for this item
10. Lai, X.. "Suppressed growth of unstable low-k GeO/sub x/ interlayer in Ge metal-oxide-semiconductor capacitor with high-k gate dielectric by annealing in water vapor." Applied physics letters 90.16 (2007): 163502-. Link to Full Text for this item Link to SFX for this item
11. Konishi, T. "Investigation of glass formation and color properties in the P2O5–TeO2–ZnO system." Journal of non-crystalline solids 324.1-2 (2003): 58-66. Link to SFX for this item
12. Park, M. "Analysis of GOI-MOSFET with high-k gate dielectric and metal gate fabricated by Ge condensation technique." Surface and interface analysis 38.12 (2006): 1720-4. Link to Full Text for this item Link to SFX for this item
View More...
View Less...
Select All Clear All

Expand list of advanced services Advanced