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Formation of two-dimensional photonic-crystal structures in silicon for near-infrared region using fine focused ion beams

  • Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003)
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Abstract

One of the two variants of producing two-dimensional photonic crystals in silicon is the formation of ordered macropore structures in a silicon substrate. The characteristic pore dimensions (the diameter and the wall thickness between pores) determine the wavelength range in which such a pore structure exhibits the properties of a photonic crystal. For the near-infrared region, these dimensions approach 1 µm or fall in a submicron region. An ordered structure of macropores with such dimensions is formed in this work using fine focused ion beams to provide the stimulating effect of implanted ions on pore nucleation in given sites on the silicon substrate surface. Pores are shown to nucleate at sites subjected to ion irradiation even at a low implantation dose (2×1013 ion/cm2). A model describing the orienting effect of ion irradiation on pore nucleation is proposed.

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Authors and Affiliations

  1. Institute of Microelectronic Technology and Ultra-High-Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow oblast, 142432, Russia

    A. F. Vyatkin, E. Yu. Gavrilin, Yu. B. Gorbatov, V. V. Starkov & V. V. Sirotkin

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  1. A. F. Vyatkin
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  2. E. Yu. Gavrilin
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  3. Yu. B. Gorbatov
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  4. V. V. Starkov
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  5. V. V. Sirotkin
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Translated from Fizika Tverdogo Tela, Vol. 46, No. 1, 2004, pp. 35–38.

Original Russian Text Copyright © 2004 by Vyatkin, Gavrilin, Gorbatov, Starkov, Sirotkin.

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Vyatkin, A.F., Gavrilin, E.Y., Gorbatov, Y.B. et al. Formation of two-dimensional photonic-crystal structures in silicon for near-infrared region using fine focused ion beams. Phys. Solid State 46, 32–34 (2004). https://doi.org/10.1134/1.1641915

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  • DOI: https://doi.org/10.1134/1.1641915

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