Abstract
The I-V characteristics of p-ZnTe films deposited on ψ-Si using different growth conditions have been studied. The devices fabricated at substrate temperatures above 473 K possess bistable impedance states: switching from high-to-low impedance occurs when ZnTe film is positive biased, while switching from low-to-high impedance state occurs when ZnTe film is negative biased. It is observed that zero-based capacitance, open circuit photovoltage and short circuit current density are increased when the device is switched to the low impedance state and revert to their initial values when switched back to the high-impedance state. It is believed that an electronic switching mechanism is responsible, most probably the filling and the emptying of traps in the wide band gap ZnTe films.
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Patel, N.G. Some observations on the switching and memory phenomena in ZnTe-Si. J Mater Sci 21, 2097–2099 (1986). https://doi.org/10.1007/BF00547952
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DOI: https://doi.org/10.1007/BF00547952