Abstract
Electrophysical parameters of single and double delta-doped layers in GaAs epitaxial films grown by the metal-organic chemical vapor deposition have been systematically investigated in the temperature range of 4.2 to 300 K. The 2D electron gas density distribution is affected by the overlap of wave functions in neighboring quantum wells, as a result of which the peak on the curve of the Hall mobility in the 2D electron gas versus the separation between the quantum wells shifts. The persistent photoconductivity in delta-doped layers is due to the change in the surface potential caused by the neutralization of the negative charge of surface states by photoexcited holes. A method for comparing delta-doped layers grown under different conditions at different depths from the sample surface has been suggested.
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References
K. Ploog, J. Cryst. Growth 81, 304 (1987).
E. F. Shubert, in Semiconductor and Semimetals: Epitaxial Microstructures, ed. by A. G. Gossard, Academic Press, New York (1994), Vol. 40, p. 1.
A. Ya. Shik, Fiz. Tekh. Poluprovodn. 26, 1161 (1992) [Sov. Phys. Semicond. 26, 649 (1992)].
X. Zheng, T. K. Carns, K. L. Wang et al., Appl. Phys. Lett. 62, 504 (1993).
H. H. Radamson, M. R. Sardela, Jr., O. Nur et al., Appl. Phys. Lett. 64, 1842 (1994).
T. Ihn, H. Kostial, R. Hey et al., in Extended Abstract of the 1992 International Conf. on Solid State Devices and Materials, Tsukuba Center Building, Tsukuba, Japan (1992), p. 313.
P. M. Koenraad, A. C. L. Heessels, F. A. P. Blom et al., Physica B 184, 221 (1993).
T. Makimoto, N. Kobayashi, and Y. Horikoshi, J. Appl. Phys. 63, 5023 (1988).
G. Q. Hai and N. Studart, Phys. Rev. B 52, 2245 (1995).
A. G. de Olivera, G. M. Ribeiro, D. A. W. Soares et al., J. Appl. Phys. 78, 2659 (1995).
S. Arscott, M. Missous, and L. Dobaczewski, Semicond. Sci. Technol. 7, 620 (1992).
J. Sanchez-Dehesa, D. Lavielle, E. Ranz et al., Semicond. Sci. Technol. 6, 445 (1991).
E. F. Shubert, J. M. Kuo, and R. F. Kopf, J. Electron. Mater. 19, 521 (1990).
P. M. Koenraad, F. A. P. Blom, C. J. G. M. Langerak et al., Semicond. Sci. Technol. 5, 861 (1990).
G. Q. Hai, N. Studart, and F. M. Peeters, Phys. Rev. B 52, 8363 (1995).
W. de Lange, F. A. Blom, P. J. van Hall, et al., Physica B 184, 216 (1993).
I. A. Panaev, S. A. Studenikin, D. I. Lubyshev, and V. P. Migal’, Semicond. Sci. Technol. 8, 1822 (1993).
R. C. Newman, Semicond. Sci. Technol. 9, 1749 (1994); T. N. Theis, P. M. Mooney, and S. L. Wright, Phys. Rev. Lett. 60, 361 (1988); D. C. Chadi and K. J. Chang, Phys. Rev. Lett. 61, 873 (1988).
E. H. Rhoderick, Metal-Semiconductor Contacts, Clarendon Press, Oxford (1978).
Y. Fu, and M. Willander, J. Appl. Phys. 78, 3504 (1995).
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Zh. Éksp. Teor. Fiz. 113, 693–702 (February 1998)
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Valyaev, V.V., Gurtovoi, V.L., Ivanov, D.Y. et al. Conductivity and persistent photoconductivity in GaAs epitaxial films containing single and double delta-doped layers. J. Exp. Theor. Phys. 86, 383–387 (1998). https://doi.org/10.1134/1.558440
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DOI: https://doi.org/10.1134/1.558440