Analytical stability boundaries of an injected two-polarization semiconductor laser

Gaetan Friart, Athanasios Gavrielides, and Thomas Erneux
Phys. Rev. E 91, 042918 – Published 30 April 2015

Abstract

The classical problem of a semiconductor laser subject to polarized injection is revisited. From the laser rate equations for the transverse electric (TE) and transverse magnetic (TM) modes, we first determine the steady states. We then investigate their linear stability properties and derive analytical expressions for the steady, saddle-node, and Hopf bifurcation points. We highlight conditions for bistability between pure- and mixed-mode steady states for the laser subject to either TE or TM injection. To our knowledge, the first case has not been documented yet. An important parameter is the ratio of the polarization gain coefficients and we explore its effect on the stability and bifurcation diagrams.

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  • Received 15 December 2014

DOI:https://doi.org/10.1103/PhysRevE.91.042918

©2015 American Physical Society

Authors & Affiliations

Gaetan Friart1,*, Athanasios Gavrielides2, and Thomas Erneux1

  • 1Université Libre de Bruxelles, Optique Nonlinéaire Théorique, Campus Plaine, C.P. 231, 1050 Bruxelles, Belgium
  • 2University of New Mexico, Center for High Technology Materials, Albuquerque, New Mexico 87131-0001, USA

  • *gfriart@ulb.ac.be

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Vol. 91, Iss. 4 — April 2015

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