Extended photoemission fine structure analysis of the Si(111)-(7×7) surface core levels

J. A. Carlisle, M. T. Sieger, T. Miller, and T.-C. Chiang
Phys. Rev. Lett. 71, 2955 – Published 1 November 1993
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Abstract

The surface- and bulk-derived components of the Si 2p core levels, acquired by photoemission from Si(111)-(7×7), show strong and different oscillations caused by extended fine structure above the 2p edge. An analysis of these oscillations yields the bulk and surface bond lengths which agree well with the known structure. The heretofore controversial issues of the photoemission escape depth and the atomic origin of the surface core levels are resolved.

  • Received 9 August 1993

DOI:https://doi.org/10.1103/PhysRevLett.71.2955

©1993 American Physical Society

Authors & Affiliations

J. A. Carlisle, M. T. Sieger, T. Miller, and T.-C. Chiang

  • Department of Physics, University of Illinois, 1110 West Green Street, Urbana, Illinois 61801
  • Materials Research Laboratory, University of Illinois, 104 South Goodwin Avenue, Urbana, Illinois 61801

Comments & Replies

Comment on ‘‘Extended photoemission fine structure analysis of the Si(111)-(7×7) surface core levels’’

G. Le Lay and M. Fontaine
Phys. Rev. Lett. 72, 3740 (1994)

Carlisle et al. reply

J. A. Carlisle, T. Miller, and T.-C. Chiang
Phys. Rev. Lett. 72, 3741 (1994)

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Vol. 71, Iss. 18 — 1 November 1993

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