Phys. Rev. B 80, 035333 (2009) - Quantum efficiency of stimulated emission in colloidal semiconductor nanocrystal quantum dots

Quantum efficiency of stimulated emission in colloidal semiconductor nanocrystal quantum dots

Chunfeng Zhang, Jian Xu, Ting Zhu, Fan Zhang, Zhanao Tan, Steven J. Schiff, Huaipeng Su, Shuai Gao, and Andrew Y. Wang

Phys. Rev. B 80, 035333 – Published 30 July 2009

Abstract

External differential quantum efficiencies were studied for the stimulated emission of thin films of colloidal CdSe/CdS/ZnS nanocrystal quantum dots (NQDs) using the integrating sphere technique. A maximum efficiency of 34% was measured for the stimulated emission in NQDs which far exceeds that for spontaneous emission (9%). The competition between the radiative exciton/biexciton recombination and the carrier density-dependent nonradiative relaxation processes in NQDs was modeled to account for the observed difference in efficiency.

Received 19 January 2009

DOI:https://doi.org/10.1103/PhysRevB.80.035333

©2009 American Physical Society

Authors & Affiliations

Chunfeng Zhang, Jian Xu^*, Ting Zhu, Fan Zhang, Zhanao Tan, and Steven J. Schiff

Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, Pennsylvania 16802, USA

Huaipeng Su and Shuai Gao

Department of Chemical Engineering, Tianjin University, Tianjin 300072, China

Ocean NanoTech LLC., Fayetteville, Arkansas 72701-7175, USA

^*Corresponding author; jianxu@engr.psu.edu

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Issue

Vol. 80, Iss. 3 — 15 July 2009

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