ExLibris header image
SFX Logo
Title: A comprehensive study of magnetoresistance mobility in short channel transistors: Application to strained and unstrained silicon-on-insulator field-effect transistors
Source:

Journal of Applied Physics [0021-8979] Cassé, M yr:2009


Collapse list of basic services Basic
Sorry, no full text available...
Please use the document delivery service (see below)  
Holding information
Holdings in library search engine ALBERT GO
Document delivery
Request document via Library/Bibliothek GO
Users interested in this article also expressed an interest in the following:
1. Lusakowski, J. "Low electron mobility of field-effect transistor determined by modulated magnetoresistance." Journal of applied physics 102.10 (2007): 103701-. Link to SFX for this item
2. Fischetti, M. "Monte Carlo simulation of hot-carrier transport in real semiconductor devices." Solid-state electronics 32.12 (1989): 1723-1729. Link to Full Text for this item Link to SFX for this item
3. Thao, D. "Numerical simulation of THz radiation by coherent LO phonons in GaAs p-i-n diodes under high electric fields." Journal of the Physical Society of Japan 73.11 (2004): 3177-81. Link to SFX for this item
4. Chaisantikulwat, W. "Differential magnetoresistance technique for mobility extraction in ultra-short channel FDSOI transistors." Solid-state electronics 50.4 (2006): 637-643. Link to SFX for this item
Select All Clear All

Expand list of advanced services Advanced