ExLibris header image
SFX Logo
Title: Auger recombination in low-band-gap n-type InGaAs
Source:

Applied Physics Letters [0003-6951] Metzger, W K yr:2001


Collapse list of basic services Basic
Full text
Full text available via AIP Journals (American Institute of Physics)
GO
Document delivery
Request document via Library/Bibliothek GO
Users interested in this article also expressed an interest in the following:
1. Grandidier, B. "Scanning tunneling microscopy and spectroscopy of arsenic antisites in low temperature grown InGaAs." Applied physics letters 74.10 (1999): 1439-1441. Link to Full Text for this item Link to SFX for this item
2. Fuchs, G. "Auger recombination in strained and unstrained InGaAs/InGaAsP multiple quantum-well lasers." Applied physics letters 62.4 (1993): 396-398. Link to Full Text for this item Link to SFX for this item
3. Jafri, Z. "The Fermi level effect in III-V intermixing: The final nail in the coffin?" Journal of applied physics 81.5 (1997): 2179-2184. Link to Full Text for this item Link to SFX for this item
4. Haug, A. "Auger recombination in quantum well semiconductors: calculation with realistic energy bands." Semiconductor Science and Technology 7.11 (1992): 1337-1340. Link to Full Text for this item Link to SFX for this item
5. Wang, M C. "Measurement of nonradiative Auger and radiative recombination rates in strained?layer quantum?well systems." Applied physics letters 62.2 (1993): 166-168. Link to Full Text for this item Link to SFX for this item
6. Nakajima, K. "Bridgman growth of compositionally graded InxGa1-xAs (x=0.05-0.30) single crystals for use as seeds for In0.25Ga0.75As crystal growth." Journal of Crystal Growth 173.1-2 (1997): 42-50. Link to Full Text for this item Link to SFX for this item
7. SAITOH, T. "IN-SITU PHOTOLUMINESCENCE AND CAPACITANCE-VOLTAGE CHARACTERIZATION OF INALAS/INGAAS REGROWN HETEROINTERFACES BY MOLECULAR-BEAM EPITAXY." Journal of Crystal Growth 1995. 96-100. Link to Full Text for this item Link to SFX for this item
8. Bank, S R. "High-performance 1.5 μm GaInNAsSb lasers grown on GaAs." Electronics letters 40.19 (2004): 1186-. Link to SFX for this item
9. Ebert, P. "Defects in III-V semiconductor surfaces." Applied physics. A, Materials science & processing 75.1 (2002): 101-112. Link to Full Text for this item Link to SFX for this item
10. Ramachandran, V. "Scanning tunneling spectroscopy of Mott-Hubbard states on the 6H-SiC(0001)root 3x root 3 surface." Physical review letters 82.5 (1999): 1000-1003. Link to Full Text for this item Link to SFX for this item
11. Feenstra, R. "Low-temperature scanning tunneling spectroscopy of n-type GaAs(110) surfaces." Physical review. B, Condensed matter and materials physics 66.16 (2002): 165204-. Link to Full Text for this item Link to SFX for this item
12. OReilly, E P. "Low threshold current and high differential gain in ideal tensile- and compressive-strained quantum-well lasers." Journal of applied physics 71.9 (1992): 4626-. Link to Full Text for this item Link to SFX for this item
13. Mazur, U. "Orbital-mediated tunneling, inelastic electron tunneling, and electrochemical potentials for metal phthalocyanine thin films." The journal of physical chemistry. B 103.44 (1999): 9721-9727. Link to Full Text for this item Link to SFX for this item
14. Unold, T. "Defects and transport in a-Si : H/c-Si heterojunctions." Journal of non-crystalline solids 2000. 1033-1037. Link to SFX for this item
15. TUCK, B. "MECHANISMS OF ATOMIC DIFFUSION IN THE III-V SEMICONDUCTORS." Journal of Physics D. Applied Physics 18.4 (1985): 557-584. Link to Full Text for this item Link to SFX for this item
16. Chun, Y. "Self-aligned surface tunnel transistors fabricated by a regrowth technique." Japanese journal of applied physics 38.10B (1999). Link to SFX for this item
17. Kane, E. "Reduction of lasing threshold current density by the lowering of valence band effective mass." Journal of lightwave technology 4.5 (1986): 504-506. Link to SFX for this item
18. Bank, S.R. R. "Room-temperature continuous-wave 1.55 μm GaInNAsSb laser on GaAs." Electronics letters 42.3 (2006): 39-40. Link to SFX for this item
19. Bode, M. "Chemical-specific imaging of multicomponent metal surfaces on the nanometer scale by scanning tunneling spectroscopy." Applied physics. A, Materials science & processing 62.6 (1996): 571-573. Link to Full Text for this item Link to SFX for this item
20. Huang, M. L. "Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3." Applied physics letters 87.25 (2005): 252104-3. Link to Full Text for this item Link to SFX for this item
View More...
View Less...
Select All Clear All

Expand list of advanced services Advanced