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Title:	AlN/AlGaN superlattices as dislocation filter for low-threading-dislocation thick AlGaN layers on sapphire
Source:	Applied Physics Letters [0003-6951] Wang, Hong-Mei yr:2002

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description	1.	Heying, B. "Dislocation mediated surface morphology of GaN." Journal of applied physics 85.9 (1999): 6470-6476.
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description	4.	ESAKI, L. "X-RAY-DIFFRACTION STUDY OF A ONE-DIMENSIONAL GAAS-ALAS SUPERLATTICE." Journal of applied crystallography 10.FEB1 (1977): 1-6.
description	5.	Takeuchi, T. "Optical properties of strained AlGaN and GaInN on GaN." Japanese journal of applied physics. Supplement 36.2B (1997): 177-9.
description	6.	Voigtlander, B. "Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth." Surface Science Reports 43.5-8 (2001): 127-254.
description	7.	Sumiya, M. "Growth mode and surface morphology of a GaN film deposited along the N-face polar direction on c-plane sapphire substrate." Journal of applied physics 88.2 (2000): 1158-1165.
description	8.	Elsner, J. "Theory of threading edge and screw dislocations in GaN." Physical review letters 79.19 (1997): 3672-3675.
description	9.	Oliver, R. A. "Highlighting threading dislocations in MOVPE-grown GaN using an in situ treatment with SiH4 and NH3." Journal of crystal growth 289.2 (2006): 506-514.
description	10.	Wu, XH. "Nucleation layer evolution in metal-organic chemical vapor deposition grown GaN." Applied physics letters 68.10 (1996): 1371-1373.
description	11.	Nagai, H. "Structure of vapor‐deposited GaxIn1-xAs crystals." Journal of applied physics 45.9 (1974): 3789-.
description	12.	Peng, L. "Deep ultraviolet enhanced wet chemical etching of gallium nitride." Applied physics letters 72.8 (1998): 939-941.
description	13.	Shakya, J. "Polarization of III-nitride blue and ultraviolet light-emitting diodes." Applied physics letters 86.9 (2005): 91107-1.
description	14.	Yu, Z. "Fabrication of large area subwavelength antireflection structures on Si using trilayer resist nanoimprint lithography and liftoff." Journal of vacuum science & technology. B, Microelectronics processing and phenomena 21.6 (2003): 2874-2877.
description	15.	Lee, S. "The band-gap bowing of AlxGa1-xN alloys." Applied physics letters 74.22 (1999): 3344-3346.
description	16.	Goldstein, L. "Growth by molecular beam epitaxy and characterization of indium arsenide/gallium arsenide strained-layer superlattices." Applied physics letters 47.10 (1985): 1099-1101.
description	17.	Zhang, J. "High-quality AlGaN layers over pulsed atomic-layer epitaxially grown AlN templates for deep ultraviolet light-emitting diodes." Journal of Electronic Materials 32.5 (2003): 364-370.
description	18.	Brunner, D. "Optical constants of epitaxial AlGaN films and their temperature dependence." Journal of applied physics 82.10 (1997): 5090-5096.
description	19.	Doppalapudi, D. "Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy." Journal of applied physics 84.3 (1998): 1389-1395.
description	20.	Kim, KH. "AlGaN-based ultraviolet light-emitting diodes grown on AlN epilayers." Applied physics letters 85.20 (2004): 4777-4779.