Skip to main content

Advertisement

Log in

Photocurrent and differential capacity measurements at polybithienyl and poly(3-butylthiophene) films

  • ORIGINAL PAPER
  • Published:
Journal of Solid State Electrochemistry Aims and scope Submit manuscript

Abstract

Photocurrent and differential capacity measurements have been carried out at polybithienyl (PBT) and poly(3-butylthiophene) (PBuT) films on platinum. The photocurrents are cathodic, similar to inorganic p-type semiconductors. The band gap energy was determined from the photocurrent spectra (E g=1.7 eV for PBT and E g=1.9 eV for PBuT). The dependence of the differential capacity on the potential could be presented as Mott-Schottky plot, at least in a limited potential region. The flatband potential was determined (E fb= 0.67 V for PBT and E fb=0.58 V for PBuT).

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

Author information

Authors and Affiliations

Authors

Additional information

Received: 9 June 1998 / Accepted: 22 August 1998

Rights and permissions

Reprints and permissions

About this article

Cite this article

Zhang, W., Schmidt-Zhang, P., Kossmehl, G. et al. Photocurrent and differential capacity measurements at polybithienyl and poly(3-butylthiophene) films. J Solid State Electrochem 3, 135–140 (1999). https://doi.org/10.1007/s100080050139

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1007/s100080050139

Navigation